VTT1227 [PERKINELMER]
.025 NPN Phototransistors; 0.025 NPN光电晶体管
| 型号： | VTT1227 |
| 厂家： | 
PERKINELMER OPTOELECTRONICS |
| 描述： | .025 NPN Phototransistors |
| 文件： | 总1页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
.025" NPN Phototransistors
VTT1225, 26, 27
Clear T-1¾ (5 mm) Plastic Package
PACKAGE DIMENSIONS inch (mm)
CASE 26 T-1¾ (5 mm)
CHIP TYPE: 25T
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
A small area high speed NPN silicon phototransistor
mounted in a 5 mm diameter lensed, end looking,
transparent plastic package. Detectors in this series have
Maximum Temperatures
Storage Temperature:
Operating Temperature:
-40°C to 100°C
-40°C to 100°C
a half power acceptance angle ( 1/2) of 5°. These devices
θ
are spectrally and mechanically matched to the VTE12xx
series of IREDs.
Continuous Power Dissipation:
Derate above 30°C:
50 mW
0.71 mW/°C
Maximum Current:
25 mA
260°C
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Collector
Breakdown
Emitter
Breakdown
Saturation
Voltage
Light Current
Dark Current
Rise/Fall Time
t /t
Angular
Response
l
l
V
V
V
CE(SAT)
C
CEO
BR(CEO)
BR(ECO)
R F
Part Number
θ
1/2
l = 100 µA
l = 100 µA
H = 0
l = 1.0 mA
H = 400 fc
l = 1.0 mA
C
C
E
C
mA
H = 0
H
H = 0
R = 100 Ω
L
2
fc (mW/cm )
= 5.0 V
(nA)
V
CE
V
CE
Min.
Max.
Volts, Min.
Volts, Min.
Volts, Max.
µsec, Typ.
Typ.
Max. (Volts)
VTT1225
VTT1226
VTT1227
4.0
7.5
—
—
—
100 (5)
100 (5)
100 (5)
100
100
100
10
10
10
30
30
30
5.0
5.0
5.0
0.25
0.25
0.25
1.5
3.0
4.0
±5°
±5°
±5°
12.0
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
94
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