MBR10100CT [PFS]
10 Amp Schottky Barrier Rectifier 80-100 Volts; 10安培肖特基势垒整流器80-100伏特
| 型号： | MBR10100CT |
| 厂家： | 
SHENZHEN PING SHENG ELECTRONICS CO., LTD. |
| 描述： | 10 Amp Schottky Barrier Rectifier 80-100 Volts |
| 文件： | 总2页 (文件大小：639K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1080CT
MBR10100CT
THRU
Features
·
·
·
·
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
10 Amp
Schottky Barrier
Rectifier
High surge capacity, High current capability
80-100 Volts
Maximum Ratings
·
·
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +175°C
TO-220AB
Microsemi
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
80V
Maximum Maximum
B
L
RMS
DC
M
Voltage
Blocking
Voltage
C
D
A
K
MBR1080CT MBR1080CT
MBR10100CT MBR10100CT 100V
56V
70V
80V
100V
E
F
PIN
2
1
3
G
I
J
°
Electrical Characteristics @ 25 C Unless Otherwise Specified
N
H
H
Average Forward
Current
IF(AV)
10A
TC = 100°C
PIN 1
PIN 3
PIN 2
CASE
Peak Forward Surge
Current
IFSM
120A
8.3ms, half sine
Maximum Forward
Voltage Drop Per
Element
ꢁꢂꢃꢉꢄꢊꢂꢇꢄꢊ
ꢀ ꢀ ꢀ ꢀ
IFM = 5A
INCHES
MM
VF
.85V
.75V
25°C
TJ =
TJ =
ꢁꢂꢃ
A
B
ꢃꢂꢄ
.560
.380
.100
ꢃꢅꢆ
ꢃꢂꢄ
14.22
9.65
ꢃꢅꢆ
15.88
10.67
3.43
ꢄꢇꢈꢉ
.625
.420
.135
125°C
C
2.54
D
E
F
G
H
I
J
K
.230
.380
------
.500
.090
.020
.012
.270
.420
.250
.580
.110
.045
.025
5.84
9.65
------
12.70
2.29
0.51
0.30
3.53
6.86
10.67
6.35
14.73
2.79
1.14
0.64
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
0.2mA TJ = 25°C
IR
TJ = 125°C
15mA
.139
.161
4.09
L
M
N
.140
.045
.080
.190
.055
.115
3.56
1.14
2.03
4.83
1.40
2.92
Typical Junction
Capacitance
CJ
Measured at
1.0MHz, VR=4.0V
300pF
*Pulse test: Pulse width 300 msec, Duty cycle 2%
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MBR1080CT thru MBR 10100CT
RATING AND CHARACTERISTIC CURVES
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
16
140
120
100
75
12
8
50
4
RESISTIVE OR
25
INDUCTIVE LOAD
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
0
25
20
NUMBER OF CYCLES AT 60Hz
50
75
100
125
150
175
1
2
5
10
50
100
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
10
100
10
1.0
0.1
1.0
0.1
0.01
TJ = 25 C
TJ = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.001
140
0
20
40
60
80
100
120
0.8
0.9
0.1 0.2
0.3
0.4
0.5
0.6
0.7
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
100
TJ = 25 C, f= 1MHz
10
0.1
1
100
4
10
REVERSE VOLTAGE , VOLTS
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相关型号：
MBR10100CT-G
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, Silicon, TO-220AB, GREEN, PLASTIC PACKAGE-3
SENSITRON
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