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元器件品牌
BR82
[PFS]
High forward surge current capability; 高正向浪涌电流能力
元器件型号：
BR82
生产厂家：
SHENZHEN PING SHENG ELECTRONICS CO., LTD.
描述和应用：
High forward surge current capability
高正向浪涌电流能力
二极管
PDF文件：
总2页 (文件大小：223K)
下载文档：
下载PDF数据表文档文件
型号参数：BR82参数
查看货源
BR-8208201%
General Purpose Inductor, 820uH, 1%, 1 Element, Ferrite-Core
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156
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0
VISHAY
BR-82082010%
General Purpose Inductor, 820uH, 10%, 1 Element, Ferrite-Core
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156
-
0
VISHAY
BR-8208203%
General Purpose Inductor, 820uH, 3%, 1 Element, Ferrite-Core
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156
-
0
VISHAY
BR-8208205%
General Purpose Inductor, 820uH, 5%, 1 Element, Ferrite-Core
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156
-
0
VISHAY
BR8230
Wide Band Low Power Amplifier, 0MHz Min, 600MHz Max, H2, TO-8B
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156
-
1
APITECH
BR-82821%
General Purpose Inductor, 82uH, 1%, 1 Element, Ferrite-Core
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156
-
0
VISHAY
BR-828210%
General Purpose Inductor, 82uH, 10%, 1 Element, Ferrite-Core
Warning
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156
-
0
VISHAY
BR-82823%
General Purpose Inductor, 82uH, 3%, 1 Element, Ferrite-Core
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156
-
0
VISHAY
BR-82825%
General Purpose Inductor, 82uH, 5%, 1 Element, Ferrite-Core
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156
-
0
VISHAY
BR82D
Bridge Rectifier Diode, 1 Phase, 2A, 200V V(RRM), Silicon
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1
DIODES
BR82D
Bridge Rectifier Diode, 1 Phase, 2A, 200V V(RRM), Silicon
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DIODES
BR82D
Bridge Rectifier Diode, 2A, 200V V(RRM),
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156
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0
LITTELFUSE
BR82DF
Bridge Rectifier Diode, 1 Phase, 2A, 200V V(RRM), Silicon
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156
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DIODES
BR82DF
Bridge Rectifier Diode, 1 Phase, 2A, 200V V(RRM), Silicon
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156
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DIODES
BR82DG
Bridge Rectifier Diode, 1 Phase, 2A, 600V V(RRM), Silicon,
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0
DIODES
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