1PS70SB15T/R 概述
Rectifier Diode, Schottky, 0.2A, 30V V(RRM), 整流二极管
1PS70SB15T/R 规格参数
是否Rohs认证: | 符合 | 生命周期: | Transferred |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | 风险等级: | 5.74 |
二极管类型: | RECTIFIER DIODE | 最大正向电压 (VF): | 0.8 V |
JESD-609代码: | e3 | 最大非重复峰值正向电流: | 0.6 A |
最高工作温度: | 125 °C | 最大输出电流: | 0.2 A |
最大重复峰值反向电压: | 30 V | 子类别: | Rectifier Diodes |
表面贴装: | YES | 技术: | SCHOTTKY |
端子面层: | Matte Tin (Sn) | Base Number Matches: | 1 |
1PS70SB15T/R 数据手册
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DATA SHEET
ok, halfpage
1PS70SB10; 1PS70SB14;
1PS70SB15; 1PS70SB16
Schottky barrier (double) diodes
1999 Apr 26
Product specification
Philips Semiconductors
Product specification
1PS70SB10; 1PS70SB14;
1PS70SB15; 1PS70SB16
Schottky barrier (double) diodes
FEATURES
PINNING
PIN
• Low forward voltage
1PS70SB..
• Guard ring protected
3
10
14
15
16
• Very small plastic SMD package.
1
2
3
a1
n.c.
k1
a1
k2
a1
a2
k1
k2
1
2
MLC358
APPLICATIONS
k1, a2 k1, k2 a1, a2
• Ultra high-speed switching
• Voltage clamping
Fig.3 1PS70SB14 diode
configuration (symbol).
3
halfpage
• Protection circuits
• Blocking diodes.
DESCRIPTION
3
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
1
2
1
2
Top view
MLC359
MGD765
Fig.1 Simplified outline
SOT323 (SC-70) and
pin configuration.
Fig.4 1PS70SB15 diode
configuration (symbol).
MARKING
MARKING
TYPE NUMBER
CODE (1)
1PS70SB10
1PS70SB14
1PS70SB15
1PS70SB16
7 0
7 4
7 5
7 6
3
3
1
2
1
2
n.c.
MLC360
MLC357
Note
1.
Fig.2 1PS70SB10 single
diode configuration
(symbol).
= -: Made in Hong Kong.
= t: Made in Malaysia.
Fig.5 1PS70SB16 diode
configuration (symbol).
1999 Apr 26
2
Philips Semiconductors
Product specification
1PS70SB10; 1PS70SB14;
1PS70SB15; 1PS70SB16
Schottky barrier (double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation (per package)
storage temperature
−
−
−
−
−
30
V
IF
200
300
mA
mA
mA
mW
°C
IFRM
IFSM
Ptot
Tstg
Tj
tp ≤ 1 s; δ ≤ 0.5
tp < 10 ms
600
Tamb < 25 °C
200
−65
−
+150
125
junction temperature
°C
Tamb
operating ambient temperature
−65
+125
°C
ELECTRICAL CHARACTERISTICS
amb = 25 °C unless otherwise specified.
T
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
continuous forward voltage
see Fig.6
IF = 0.1 mA
240
320
400
500
800
2
mV
IF = 1 mA
mV
mV
mV
mV
µA
IF = 10 mA
IF = 30 mA
IF = 100 mA
IR
continuous reverse current
diode capacitance
VR = 25 V; note 1; see Fig.7
VR = 1 V; f = 1 MHz; see Fig.8
Cd
10
pF
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
625
UNIT
Rth j-a
K/W
Note
1. Refer to SOT323 (SC70) standard mounting conditions.
1999 Apr 26
3
Philips Semiconductors
Product specification
1PS70SB10; 1PS70SB14;
1PS70SB15; 1PS70SB16
Schottky barrier (double) diodes
GRAPHICAL DATA
MSA892
MSA893
(1)
3
2
10
3
10
handbook, halfpage
I
I
R
(µA)
(1) (2) (3)
F
(mA)
2
10
10
(2)
10
10
(1)
(2) (3)
1
1
1
(3)
10
1
10
0
10
20
30
0
0.4
0.8
1.2
V
(V)
R
V
(V)
F
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3)
Tamb = 25 °C.
(3) Tamb = 25 °C.
Fig.6 Forward current as a function of forward
voltage; typical values.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
MSA891
15
C
d
(pF)
10
5
0
0
10
20
30
V
(V)
R
f = 1 MHz; Tamb = 25 °C.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
1999 Apr 26
4
Philips Semiconductors
Product specification
1PS70SB10; 1PS70SB14;
1PS70SB15; 1PS70SB16
Schottky barrier (double) diodes
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
1
b
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT323
SC-70
97-02-28
1999 Apr 26
5
Philips Semiconductors
Product specification
1PS70SB10; 1PS70SB14;
1PS70SB15; 1PS70SB16
Schottky barrier (double) diodes
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 26
6
Philips Semiconductors
Product specification
1PS70SB10; 1PS70SB14;
1PS70SB15; 1PS70SB16
Schottky barrier (double) diodes
NOTES
1999 Apr 26
7
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© Philips Electronics N.V. 1999
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/01/pp8
Date of release: 1999 Apr 26
Document order number: 9397 750 05266
1PS70SB15T/R 相关器件
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1PS70SB16 | NXP | Schottky barrier double diodes | 获取价格 | |
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1PS70SB16 | TYSEMI | Low forward voltage Guard ring protected Very small plastic SMD package | 获取价格 | |
1PS70SB16 | NEXPERIA | Dual Schottky barrier diodeProduction | 获取价格 | |
1PS70SB16,115 | NXP | 1PS70SB16 - Dual Schottky barrier diode SC-70 3-Pin | 获取价格 | |
1PS70SB16T/R | NXP | DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-70, 3-PIN, Signal Diode | 获取价格 | |
1PS70SB20 | NXP | Schottky barrier diode | 获取价格 | |
1PS70SB20 | KEXIN | Schottky barrier diode | 获取价格 | |
1PS70SB20 | PHILIPS | Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM) | 获取价格 | |
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