BAV199W [NXP]
Low-leakage double diode; 低漏电双二极管
| 型号： | BAV199W |
| 厂家： | 
NXP |
| 描述： | Low-leakage double diode |
| 文件： | 总8页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAV199W
Low-leakage double diode
1999 May 11
Product specification
Supersedes data of 1998 Jan 09
Philips Semiconductors
Product specification
Low-leakage double diode
BAV199W
FEATURES
PINNING
• Small plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
PIN
DESCRIPTION
1
2
3
anode
cathode
• Continuous reverse voltage:
max. 75 V
cathode; anode
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
3
3
handbook, halfpage
1
2
APPLICATIONS
• Low-leakagecurrentapplicationsin
surface mounted circuits.
1
2
MAM391
Top view
DESCRIPTION
Marking code: JY- = made in Hong Kong; JYt = made in Malaysia.
Epitaxial, medium-speed switching,
double diode in a small plastic
Fig.1 Simplified outline (SOT323; SC-70) and symbol.
SOT323 (SC-70) SMD package.
The diodes are connected in series.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Per diode unless otherwise specified
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
−
−
−
−
−
85
V
75
V
IF
single diode loaded; Ts = 90 °C; see Fig.2
double diode loaded; Ts = 90 °C; see Fig.2
135
110
500
mA
mA
mA
IFRM
IFSM
repetitive peak forward current
non-repetitive peak forward
current
square wave; Tj = 25 °C prior to surge;
see Fig.4
tp = 1 µs
−
4
A
tp = 1 ms
−
1
A
tp = 1 s
−
0.5
150
240
A
Ptot
total power dissipation
single diode loaded; Ts = 90 °C
double diode loaded; Ts = 90 °C
−
mW
mW
−
Tstg
Tj
storage temperature
junction temperature
−65
−
+150 °C
150 °C
1999 May 11
2
Philips Semiconductors
Product specification
Low-leakage double diode
BAV199W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
−
−
−
−
900
mV
1000
1100
1250
mV
mV
mV
IF = 150 mA
IR
reverse current
see Fig.5
VR = 75 V
0.003
3
5
nA
nA
pF
µs
VR = 75 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
80
−
Cd
trr
diode capacitance
2
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
0.8
3
measured at IR = 1 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
400
UNIT
Rth j-s
thermal resistance from junction to soldering point Ts = 90 °C
K/W
1999 May 11
3
Philips Semiconductors
Product specification
Low-leakage double diode
BAV199W
GRAPHICAL DATA
MLB752 - 1
MBK522
300
300
handbook, halfpage
handbook, halfpage
I
I
F
F
(mA)
(mA)
(1)
200
200
(2)
(1)
(2)
(3)
100
100
0
0
0
0
100
200
T
(°C)
0.4
0.8
1.2
1.6
s
V
(V)
F
(1) Single diode loaded.
(2) Double diodes loaded.
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of soldering point
temperature; per diode.
Fig.3 Forward current as a function of forward
voltage; per diode.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
1999 May 11
4
Philips Semiconductors
Product specification
Low-leakage double diode
BAV199W
MBG526
MLB754
2
10
2
handbook, halfpage
handbook, halfpage
I
R
(nA)
C
d
(1)
10
(pF)
1
1
1
10
(2)
2
10
0
0
3
5
10
15
20
10
V (V)
R
0
50
100
150
200
o
T
( C)
j
VR = 75 V.
(1) Maximum values.
(2) Typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature; per diode.
Fig.6 Diode capacitance as a function of reverse
voltage; per diode; typical values.
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 5 µs; duty factor δ = 0.05.
Oscilloscope: rise time tr = 0.35 ns.
Fig.7 Reverse recovery time test circuit and waveforms.
1999 May 11
5
Philips Semiconductors
Product specification
Low-leakage double diode
BAV199W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
1
b
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT323
SC-70
97-02-28
1999 May 11
6
Philips Semiconductors
Product specification
Low-leakage double diode
BAV199W
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 11
7
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© Philips Electronics N.V. 1999
SCA64
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Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 May 11
Document order number: 9397 750 05947
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