BF485PN 概述
NPN/PNP high voltage transistors NPN / PNP高压晶体管
BF485PN 数据手册
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DATA SHEET
dbook, halfpage
BF485PN
NPN/PNP high voltage transistors
Product specification
2000 Aug 02
Philips Semiconductors
Product specification
NPN/PNP high voltage transistors
BF485PN
FEATURES
PINNING
• High voltage (max. 350 V)
PIN
DESCRIPTION
• Low current (max. 200 mA)
1 and 4
5 and 2
6 and 3
emitter TR1; TR2
• High power dissipation (600 mW)
• Two independently working transistors.
base TR1; TR2
collector TR1; TR2
APPLICATIONS
• Complementary high-voltage configurations
• Hook switch in telephone applications.
6
5
4
6
5
2
4
3
handbook, halfpage
TR1
DESCRIPTION
TR2
NPN/PNP transistors in a SOT457 (SC-74) plastic
package.
1
1
2
3
Top view
MAM439
MARKING CODE
TYPE NUMBER
BF485PN
CODE
Fig.1 Simplified outline (SOT457) and symbol
HS
LIMITING VALUES
In accordance with Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
Per transistor; for the PNP transistor with negative polarity
MIN. MAX. UNIT
VCBO
VCEO
VEBO
IO
collector-base voltage
collector-emitter voltage
emitter-base voltage
open emitter
−
350
350
6
V
open base
−
V
open collector
−
V
output current (DC)
−
100
200
600
mA
mA
mW
ICM
peak collector current
total power dissipation
storage temperature
−
Ptot
Tamb ≤ 25 °C; note 1
−
Tstg
Tj
−65
−
+150 °C
150 °C
+150 °C
junction temperature
Tamb
operating ambient temperature range
−65
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
300
mW
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2000 Aug 02
2
Philips Semiconductors
Product specification
NPN/PNP high voltage transistors
BF485PN
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Note
PARAMETER
CONDITIONS
in free air; note 1
VALUE
208
UNIT
from junction to ambient
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off current
IE = 0; VCB = 300 V;
−
50
50
100
−
nA
µA
nA
IE = 0; VCB = 250 V; Tj = 150 °C
IC = 0; VEB = 5 V
−
IEBO
hFE
emitter-base cut-off current
DC current gain
−
IC = 1 mA; VCE = 10 V
60
50
−
IC = 30 mA; VCE = 10 V
−
VCEsat
VBEsat
Cc
saturation voltage
saturation voltage
collector capacitance
transition frequency
IC = 20 mA; IB = 2 mA
250
850
6
mV
mV
pF
IC = 20 mA; IB = 2 mA
−
IE = Ie = 0; VCB = 20 V; f = 1 MHz
IC = 10 mA; VCE = 20 V; f = 100 MHz
−
fT
50
−
MHz
MLD391
MLD392
300
200
handbook, halfpage
handbook, halfpage
(1)
(6)
(5)
(4) (3)
(2)
I
C
(mA)
h
FE
(1)
150
(7)
(8)
200
100
0
(9)
100
50
0
(2)
(3)
(10)
−1
2
10
1
10
10
0
2
4
6
8
10
(V)
I
(mA)
V
C
CE
TR1 (NPN).
TR1 (NPN); VCE = 10 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(1) IB = 30 mA.
(2) IB = 27 mA.
(3) IB = 24 mA.
(4) IB = 21 mA.
(5)
I
B = 18 mA.
(8) IB = 9 mA.
(9) IB = 6 mA.
(10) IB = 3 mA.
(6) IB = 15 mA.
(7) IB = 12 mA.
(3) Tamb = −55 °C.
Fig.2 DC current gain as a function of collector
current: typical values.
Fig.3 Collector current as a function of
collector-emitter voltage; typical values.
2000 Aug 02
3
Philips Semiconductors
Product specification
NPN/PNP high voltage transistors
BF485PN
MLD393
MLD394
1000
1000
handbook, halfpage
handbook, halfpage
V
BE
V
BEsat
(1)
(mV)
(mV)
(1)
(2)
800
(2)
800
600
(3)
600
400
400
200
0
(3)
200
10
−1
2
1
10
10
−1
2
10
1
10
10
I
(mA)
C
I
(mA)
C
TR1 (NPN); VCE = 10 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
TR1 (NPN); IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
(3) Tamb = 150 °C.
Fig.4 Base-emitter voltage as a function of
collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current.
MLD395
MLD396
3
10
300
handbook, halfpage
handbook, halfpage
h
FE
V
CEsat
(mV)
(1)
200
(1)
2
10
(2)
(3)
(2)
100
(3)
0
−10
10
−1
2
−1
2
10
1
10
10
−1
−10
−10
I
(mA)
I
(mA)
C
C
TR1 (NPN); IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
TR2 (PNP); VCE = −10 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6 Collector-emitter saturation voltage as a
function of collector current: typical values.
Fig.7 DC current gain as a function of collector
current: typical values.
2000 Aug 02
4
Philips Semiconductors
Product specification
NPN/PNP high voltage transistors
BF485PN
MLD397
MLD398
−200
−1000
handbook, halfpage
(6)
(1)
handbook, halfpage
(5)
(4) (3)
(2)
V
I
BE
C
(1)
(2)
(mV)
(mA)
−800
−150
(7)
(8)
−600
(9)
(3)
−100
−50
(10)
−400
−200
0
0
0
−2
−4
−6
−8
V
−10
(V)
−1
2
−10
−1
−10
−10
I
(mA)
CE
C
TR2 (PNP).
TR2 (PNP); VCE = −10 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(1) IB = −50 mA.
(2) IB = −45 mA.
(3) IB = −40 mA.
(4) IB = −35 mA.
(5)
(6)
I
B = −30 mA.
B = −25 mA.
(8) IB = −15 mA.
(9) B = −10 mA.
(10) IB = −5 mA.
I
I
(3) Tamb = 150 °C.
(7) IB = −20 mA.
Fig.8 Collector current as a function of
collector-emitter voltage; typical values.
Fig.9 Base-emitter voltage as a function of
collector current; typical values.
MLD399
MLD400
3
−10
−1000
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
(1)
V
CEsat
−800
(mV)
(2)
(1)
(2)
2
−10
−600
(3)
(3)
−400
−200
−10
−1
2
−1
2
−10
−1
−10
−10
−10
−1
−10
−10
I
(mA)
I
(mA)
C
C
TR2 (PNP); IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
TR2 (PNP); IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.10 Base-emitter saturation voltage as a
function of collector current.
Fig.11 Collector-emitter saturation voltage as a
function of collector current: typical values.
2000 Aug 02
5
Philips Semiconductors
Product specification
NPN/PNP high voltage transistors
BF485PN
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
c
1
2
3
L
p
e
b
p
w
M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
e
H
L
Q
v
w
y
p
1
p
E
0.1
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT457
SC-74
2000 Aug 02
6
Philips Semiconductors
Product specification
NPN/PNP high voltage transistors
BF485PN
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Aug 02
7
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70
SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/550/01/pp8
Date of release: 2000 Aug 02
Document order number: 9397 750 07289
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