BFQ591 [PHILIPS]
RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, NPN,;
| 型号： | BFQ591 |
| 厂家： | 
PHILIPS SEMICONDUCTORS |
| 描述： | RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, NPN, |
| 文件： | 总12页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BFQ591
NPN 7 GHz wideband transistor
Product specification
2002 Feb 04
Supersedes data of 2002 Jan 07
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
FEATURES
PINNING
PIN
• High power gain
DESCRIPTION
• Low noise figure
1
2
3
emitter
collector
base
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
Intended for applications in the GHz range such as MATV
or CATV amplifiers and RF communications subscribers
equipment.
handbook, halfpage
DESCRIPTION
1
2
3
NPN wideband transistor in a SOT89 plastic package.
Bottom view
MBK514
MARKING
TYPE NUMBER
BFQ591
MARKING CODE
Fig.1 Simplified outline (SOT89).
BCp
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
IC
PARAMETER
collector-base voltage
CONDITIONS
MIN.
TYP. MAX. UNIT
open emitter
open base
−
−
20
V
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
−
−
15
V
−
−
200
2.25
250
−
mA
W
Ptot
hFE
Cre
fT
Ts ≤ 90 °C; note 1
−
−
IC = 70 mA; VCE = 8 V
IC = 0; VCB = 12 V; f = 1 MHz
60
−
90
0.8
7
feedback capacitance
transition frequency
pF
IC = 70 mA; VCE = 12 V;
f = 1 GHz
−
−
GHz
GUM
maximum unilateral power gain
insertion power gain
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 °C
−
−
11
10
−
−
dB
dB
2
|s21
|
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 °C
Note
1. Ts is the temperature at the soldering point of the collector pin.
2002 Feb 04
2
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
−
−
−
−
−
V
V
V
VCEO
VEBO
IC
open base
15
open collector
3
200
2.25
+150
175
mA
W
Ptot
Tstg
Tj
Ts ≤ 90 °C; note 1
−65
°C
°C
−
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
thermal resistance from junction Ts ≤ 90 °C; note 1
38
to soldering point
Note
1. Ts is the temperature at the soldering point of the collector pin.
2002 Feb 04
3
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V(BR)CBO
V(BR)CES
collector-base breakdown voltage IC = 0.1 mA; IE = 0
−
−
−
20
15
V
V
collector-emitter breakdown
voltage
IC = 0.1 mA; IB = 0
−
V(BR)EBO
ICBO
hFE
emitter-base breakdown voltage IE = 0.1 mA; IC = 0
−
−
3
V
collector-base leakage current
DC current gain
IE = 0; VCB = 10
−
−
100
250
−
nA
IC = 70 mA ; VCE = 8 V
IC = 0; VCB = 12 V; f = 1 MHz
60
−
90
0.8
7
Cre
feedback capacitance
transition frequency
pF
fT
IC = 70 mA; VCE = 12 V;
f = 1 GHz
−
−
GHz
GUM
maximum unilateral power gain;
note 1
IC = 70 mA; VCE = 12 V;
Tamb = 25 °C
f = 900 MHz
f = 2 GHz
−
−
−
11
5.5
10
−
−
−
dB
dB
dB
2
|s21
|
insertion power gain
output voltage
IC = 70 mA; VCE = 12 V;
f = 1 GHz; Tamb = 25 °C
Vo
note 2
−
700
−
mV
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero and GUM = 10 log
2
s21
--------------------------------------------------------
dB.
(1 – s11 2)(1 – s22
)
2
2. dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz;
measured at f(p+q+r) = 793.25 MHz.
2002 Feb 04
4
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
MLD796
MRA749
3
250
handbook, halfpage
handbook, halfpage
h
FE
P
tot
(W)
200
150
100
2
1
0
50
0
−2
−1
2
0
50
100
150
200
10
10
1
10
10
I
(mA)
T
(°C)
C
s
VCE = 12 V.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.2 Power derating curve.
MLD797
MLD798
1.2
8
handbook, halfpage
handbook, halfpage
f
T
C
re
(GHz)
(pF)
6
0.8
4
2
0.4
0
0
0
2
1
10
10
4
8
12
16
I
(mA)
V
(V)
C
CB
IC = 0; f = 1 MHz.
VCE = 12 V; f = 1 GHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5 Transition frequency as a function of
collector current.
2002 Feb 04
5
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
MLD799
MLD800
25
10
handbook, halfpage
handbook, halfpage
gain
(dB)
8
gain
(dB)
20
MSG
15
6
4
2
G
UM
G
max
G
10
5
UM
0
0
0
0
40
80
120
40
80
120
I
(mA)
I
(mA)
C
C
VCE = 12 V; f = 900 MHz.
VCE = 12 V; f = 2 GHz.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of collector current;
typical values.
MLD801
40
handbook, halfpage
gain
(dB)
30
MSG
20
G
UM
G
max
10
MSG
0
10
2
3
4
10
10
10
f (MHz)
IC = 70 mA; VCE = 12 V.
Fig.8 Gain as a function of frequency; typical
values.
2002 Feb 04
6
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
MLD803
MLD802
−30
−30
handbook, halfpage
handbook, halfpage
d
2
d
im
(dB)
(dB)
−40
−40
−50
−60
−70
−50
−60
−70
−80
0
40
80
120
0
40
80
120
I
(mA)
I
(mA)
C
C
Vo = 700 mV; VCE = 12 V; Tamb = 25 °C; f(p+q+r) = 793.25 MHz.
Vo = 316 mV; VCE = 12 V; f(p+q) = 810 MHz.
Fig.9 Intermodulation distortion as function of
collector current; typical values.
Fig.10 Second order intermodulation distortion as
function of collector current; typical values.
2002 Feb 04
7
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
SPICE parameters for the BFQ591 die.
SEQUENCE No. PARAMETER VALUE
UNIT
1
IS
1.341
123.5
.988
fA
−
2
BF
C
handbook, halfpage
cb
3
NF
−
4
VAF
IKF
ISE
NE
75.85
9.656
232.2
2.134
10.22
1.016
1.992
294.1
211.0
997.2
5.00
V
L
B
5
mA
fA
−
L1
L2
C
B
B'
C'
6
7
E'
C
C
be
ce
8
BR
−
L
E
9
NR
−
MBC964
10
11
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35(1)
36(1)
37(1)
38
VAR
IKR
ISC
NC
V
mA
aA
−
L3
E
RB
Ω
IRB
RBM
RE
1.000
5.00
µA
Ω
QLB = 50;QLE = 50;QLB,E(f) = QLB,E√(f/fc);
fc = scaling frequency = 1 GHz.
1.275
920.6
0.000
1.110
3.000
3.821
600.0
348.5
13.60
71.73
10.28
1.929
0.000
1.409
219.4
166.5
2.340
543.7
0.000
750.0
0.000
733.2
Ω
RC
Ω
XTB
EG
−
Fig.11 Package equivalent circuit SOT89.
eV
−
XTI
CJE
VJE
MJE
TF
List of components (see Fig.11)
pF
mV
−
DESIGNATION
VALUE
UNIT
Cbe
Ccb
Cce
L1
16
fF
ps
−
150
150
1
fF
XTF
VTF
ITF
fF
V
nH
nH
nH
nH
nH
mA
deg
fF
mV
−
L2
0.01
1
PTF
CJC
VJC
MJC
XCJ
TR
L3
LB
1.2
1.2
LE
−
ps
F
CJS
VJS
MJS
FC
mV
−
−
Note
1. These parameters have not been extracted, the
default values are shown.
2002 Feb 04
8
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
3
E
L
H
E
1
2
3
c
b
2
w
M
b
1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
L
min.
UNIT
A
b
b
b
c
D
E
e
e
H
E
w
1
2
3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
4.25
3.75
mm
3.0
1.5
0.8
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT89
TO-243
SC-62
2002 Feb 04
9
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Feb 04
10
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
NOTES
2002 Feb 04
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613516/03/pp12
Date of release: 2002 Feb 04
Document order number: 9397 750 09271
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