BLU99 [NXP]
UHF power transistor; 超高频功率晶体管
| 型号： | BLU99 |
| 厂家： | 
NXP |
| 描述： | UHF power transistor |
| 文件： | 总17页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLU99
BLU99/SL
UHF power transistor
March 1993
Product specification
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
DESCRIPTION
FEATURES
N-P-N silicon planar epitaxial
transistor primarily intended for use in
mobile radio transmitters in the u.h.f.
band. The transistor is also very
suitable for application in the
• multi-base structure and diffused
emitter-ballasting resistors for an
optimum temperature profile;
• gold metallization ensures
excellent reliability.
900 MHz mobile radio band.
The BLU99 has a 4-lead stud
envelope with a ceramic cap
(SOT122A). All leads are isolated
from the stud. The BLU99/SL is a
studless version (SOT122D).
QUICK REFERENCE DATA
R.F. performance at Th = 25 °C in a common-emitter class-B circuit.
VCE
V
f
PL
W
Gp
dB
ηC
%
MODE OF OPERATION
MHz
12,5
12,5
470
900
5
4
>
10,5 >
60
60
narrow band; c.w.
typ.
7,0 typ.
PIN CONFIGURATION
PINNING - SOT122A; SOT122D
PIN
DESCRIPTION
collector
page
4
1
2
3
4
4
emitter
base
age
1
3
1
3
emitter
2
Top view
MBK187
2
MSB055
Fig.2 Simplified outline.
SOT122D
Fig.1 Simplified outline.
SOT122A
(BLU99/SL).
(BLU99).
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
March 1993
2
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
VCBO
VCEO
VEBO
max.
max.
max.
36 V
16 V
3 V
d.c. or average
IC;IC(AV)
ICM
max.
max.
0,8 A
2,5 A
peak value; f > 1 MHz
D.C. power dissipation up to Tmb = 50 °C
R.F. power dissipation
Ptot (d.c.)
max. 12,5 W
f > 1 MHz; Tmb = 25 °C
Ptot (r.f.)
Tstg
max.
19 W
Storage temperature
−65 to + 150 °C
Operating junction temperature
Tj
max.
200 °C
MDA373
MDA372
28
1
handbook, halfpage
handbook, halfpage
T
= 50 °C
mb
P
tot
(W)
T
= 70 °C
I
h
III
II
C
(A)
20
12
I
4
0
−1
10
2
20
40
60
80
100
T (°C)
h
1
10
10
V
(V)
CE
I
Continuous d.c. operation
II Continuous r.f. operation (f > 1 MHz).
III Short-time r.f. operation during mismatch (f > 1 MHz).
Rth mb-h = 0,6 K/W.
Fig.3 D.C. SOAR.
Fig.4 Power/temperature derating curves.
THERMAL RESISTANCE
(dissipation = 9 W; Tmb = 25 °C)
From junction to mounting base
(d.c. dissipation)
Rth j-mb(dc)
=
10 K/W
From junction to mounting base
(r.f. dissipation)
Rth j-mb(rf)
Rth mb-h
=
=
7,5 K/W
0,6 K/W
From mounting base to heatsink
March 1993
3
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-base breakdown voltage
open emitter; IC = 10 mA
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICES
>
>
>
<
>
36 V
16 V
3 V
Collector-emitter breakdown voltage
open base; IC = 20 mA
Emitter-base breakdown voltage
open collector; IE = 1 mA
Collector cut-off current
VBE = 0; VCE = 16 V
5 mA
1 mJ
Second breakdown energy; L = 25 mH; f = 50 Hz
RBE = 10 Ω
ESBR
D.C. current gain(2)
>
typ.
25
100
IC = 0,6 A; VCE = 10 V
hFE
Transition frequency at f = 500 MHz(1)
IC = 0,6 A; VCE = 12,5 V
fT
typ.
typ.
4,0 GHz
7,5 pF
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 12,5 V
Cc
Feedback capacitance at f = 1 MHz
IC = 0; VCE = 12,5 V
Cre
Ccs
typ.
typ.
5 pF
Collector-stud capacitance
1,2 pF
Notes
1. Measured under pulse conditions: tp = 50 µs; δ < 0,01.
2. Measured under pulse conditions: tp = 300 µs; δ < 0,01.
March 1993
4
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
MDA375
MDA374
5
120
handbook, halfpage
handbook, halfpage
f
T
(GHz)
h
FE
4
80
3
2
40
1
0
0
0
0.4
0.8
1.2
1.6
2
0
0.8
1.6
2.4
I
(A)
I
(A)
C
E
Fig.5 VCE = 10 V; Tj = 25 °C; typ. values.
Fig.6 VCB = 12,5 V; f = 500 MHz; Tj = 25 °C;
typ. values.
MDA376
16
handbook, halfpage
C
c
(pF)
14
12
10
8
6
0
4
8
12
16
V
20
(V)
CB
Fig.7 IE = ie = 0; f = 1 MHz; typ. values.
March 1993
5
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
APPLICATION INFORMATION (part I)
R.F. performance in c.w. operation (common-emitter class-B circuit) at f = 470 MHz; Th = 25 °C.
VCE
V
PL
W
PS
W
Gp
dB
IC
A
ηC
%
MODE OF OPERATION
<
0,45
>
10,5
<
0,665
>
60
narrow band; c.w.
12,5
5
typ. 0,32 typ. 12
typ. 0,60 typ. 66
C1
C2
L6
C8
L7
T.U.T.
50 Ω
L1
50 Ω
C7
L5
C6
C4
L2
C3
C5
R2
L3
R1
L4
MDA365
+V
CC
Fig.8 Class-B test circuit at f = 470 MHz.
List of components:
C1
C2
C3
C4
C5
C6
L1
L2
L3
L5
L6
L7
R1
=
=
=
=
=
=
=
=
=
=
=
=
=
2,7 pF multilayer ceramic chip capacitor(1)
C7 = C8 = 1,4-5,5 pF film dielectric trimmer (cat.no. 2222 809 09001)
7,5 pF multilayer ceramic chip capacitor(1)
2-9 pF film dielectric trimmer (cat.no. 2222 809 09002)
100 pF multilayer ceramic chip capacitor (cat. no. 2222 852 13101)
100 nF metallized film capacitor (cat. no. 2222 352 45104)
stripline, 22,5 mm × 6,0 mm
1 turn Cu-wire (1,0 mm), int. dia. 5,5 mm, leads 2 × 5 mm
L4 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642)
4 turns enamelled Cu-wire (1,0 mm), int. dia. 6 mm, length 7,5 mm, leads 2 × 5 mm
stripline, 10,0 mm × 6,0 mm
1 turn Cu-wire (1,0 mm), int. dia. 5 mm, leads 2 × 5 mm
R2 = 10 Ω metal film resistor, 0,25 W
L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (εr = 2,74) and a
thickness of 1⁄16 inch.
Note
1. American Technical Ceramics capacitor type 100 A or capacitor of same quality.
March 1993
6
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
100 mm
58 mm
rivets
L3
R1
L2
C1 C3
L7
C2
L1
L6
C8
L5
L4
C7
C4
C6
R2
C5
+V
CC
MDA366
The circuits and the components are on one side of the P.T.F.E. fibre-glass board; the other side is
unetched copper to serve as ground plane. Earth connections are made by hollow rivets.
Fig.9 Printed circuit board and component layout for 470 MHz.
March 1993
7
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
MDA378
MDA377
20
100
8
handbook, halfpage
handbook, halfpage
η
G
C
p
V
= 12.5 V
CE
P
L
(W)
(%)
80
(dB)
16
6
60
12
8
η
η
C
C
p
4
2
0
7.5 V
40
G
p
G
20
0
4
0
0
2
4
6
8
0
0.4
0.8
1.2
P
(W)
P
(W)
L
S
f = 470 MHz; class-B operation; Th = 25 °C; typ. values.
f = 470 MHz; class-B operation; Th = 25 °C; typ. values.
: VCE = 12,5 V;
− − − − : VCE = 7,5 V.
Fig.10 Output power.
Fig.11 Power gain and efficiency;
RUGGEDNESS:
The device is capable of withstanding a load mismatch
with VSWR = 50 (all phases) up to a supply voltage of
15,5 V at rated load power.
March 1993
8
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
MDA379
MDA380
4
10
handbook, halfpage
handbook, halfpage
Z
L
R
L
r
Z
i
i
(Ω)
(Ω)
8
2
6
4
x
i
0
2
X
L
−2
400
0
400
440
480
520
560
440
480
520
560
f (MHz)
f (MHz)
VCE = 12,5 V; PL = 5 W; Th = 25 °C;
VCE = 12,5 V; PL = 5 W; Th = 25 °C;
f = 400-520 MHz; typical values.
f = 400-520 MHz; typical values.
Fig.12 Input impedance (series components).
Fig.13 Load impedance (series components).
MDA381
15
handbook, halfpage
G
p
(dB)
14
13
12
11
10
400
440
480
520
560
f (MHz)
VCE = 12,5 V; PL = 5 W; Th = 25 °C;
f = 400-520 MHz; typical values.
Fig.14 Power gain.
March 1993
9
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
APPLICATION INFORMATION (part II)
R.F. performance in c.w. operation (common-emitter class-B circuit) at f = 900 MHz; Th = 25 °C
VCE
V
PL
W
PS
W
GP
dB
IC
A
ηC
%
MODE OF OPERATION
narrow band; c.w.
12,5
4
typ. 0,8
typ. 7,0
typ. 0,54
typ. 60
C4
C6
C10
C11
L6
L7
L10
C12
C13
BLU99
50 Ω
L1
L2
L5
C1
50 Ω
L8
C2
C3
C5
C7
L3
R2
L9
MDA382
R1
L4
C9
C8
+V
CC = 12.5 V
Fig.15 Class-B test circuit at f = 900 MHz.
March 1993
10
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
List of components:
C1 = C12 = 33 pF multilayer ceramic chip capacitor(1)
C2 = C13 = 1,4-5,5 pF film dielectric trimmer (cat. no. 2222 809 09001)
C3 = C11 = 1,2-3,5 pF film dielectric trimmer (cat. no. 2222 809 05001)
C4 = C5 = C10 = 6,2 pF multilayer ceramic chip capacitor(1)
C6 = 1 pF multilayer ceramic chip capacitor(1)
C7 = 10 pF ceramic feed-through capacitor
C8 = 330 pF ceramic feed-through capacitor
C9 = 2,2 µF tantalum electrolytic capacitor
L1 = stripline, 21,0 mm × 1,85 mm
L2 = stripline, 5,0 mm × 1,85 mm
L3 = 60 nH, 4 turns enamelled Cu-wire (0,4 mm), close wound, int. dia. 3 mm
L4 = L9 = Ferroxcube wideband h.f. choke, grade 3B (cat. no 4312 020 36642)
L5 = stripline, 11,3 mm × 6,0 mm
L6 = stripline, 10,0 mm × 6,0 mm
L7 = stripline, 15,9 mm × 1,85 mm
L8 = 280 nH, 15 turns enamelled Cu-wire (0,4 mm), close wound, int. dia. 3 mm
L10 = stripline, 28,0 mm × 1,85 mm
R1 = R2 = 10 Ω metal film resistor, 0,25 W
L1, L2, L5, L6, L7 and L10 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric
(εr = 2,74) and thickness of 1⁄32 inch.
Note
1. American Technical Ceramics capacitor type 100 A or capacitor of same quality.
March 1993
11
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
128.5 mm
soldered
copperstraps
E
E
B
C
80 mm
rivets
L9
C7
L8
C8
V
CC
L4
R1
C9
R2
E
E
L3
C10
C4
B
C
C1
C2
C12
C5
C6
C13
C11
C3
MDA383
The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper to serve as a
ground plane. Earth connections are made by hollow rivets and also by fixing screws and copper straps around the board and under
the emitters to provide a direct contact between the copper on the component side and the ground plane.
Fig.16 Printed circuit board and component layout for a 900 MHz test circuit.
RUGGEDNESS
The device is capable of withstanding a load mismatch
with VSWR = 50 (all phases) up to a supply voltage of
15,5 V at rated load power.
March 1993
12
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
MDA385
MDA384
100
10
5
handbook, halfpage
handbook, halfpage
η
G
C
p
P
L
(%)
(dB)
8
(W)
4
80
G
p
60
40
20
0
6
4
3
2
η
C
2
1
0
0
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
P
(W)
P
(W)
L
S
f = 900 MHz; VCE = 12,5 V; class-B operation;
f = 900 MHz; VCE = 12,5 V; class-B operation;
Th = 25 °C; typ. values.
Th = 25 °C; typ. values.
Fig.17 Output power.
Fig.18 Power gain and efficiency.
March 1993
13
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
MDA387
MDA386
14
6
handbook, halfpage
handbook, halfpage
x
Z
L
(Ω)
Z
i
(Ω)
i
R
L
10
4
r
i
6
2
0
X
L
2
800
840
880
920
960
1000
800
840
880
920
960
1000
f (MHz)
f (MHz)
f = 800-960 MHz; VCE = 12,5 V; PL = 4 W;
f = 800-960 MHz; VCE = 12,5 V; PL = 4 W;
Th = 25 °C; typ. values.
Th = 25 °C; typ. values.
Fig.19 Input impedance (series components).
Fig.20 Load impedance (series components).
MDA388
10
handbook, halfpage
G
p
(dB)
9
8
7
6
5
800
850
900
950
1000
f (MHz)
Fig.21 Power gain.
March 1993
14
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
PACKAGE OUTLINES
Studded ceramic package; 4 leads
SOT122A
D
ceramic
BeO
A
metal
Q
c
N
1
A
D
1
w
D
M
A
1
M
2
W
N
N
3
M
1
X
detail X
H
b
α
4
L
3
H
1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
L
N
1
UNIT
A
b
c
D
D
D
H
M
M
N
N
Q
W
w
1
α
1
2
1
3
max.
8-32
UNC
5.97
4.74
5.85
5.58
0.18
0.14
7.50
7.23
6.48
6.22
7.24 27.56 9.91
6.93 25.78 9.14
3.18
2.66
1.66
1.39
11.82
11.04
3.86
2.92
3.38
2.74
mm
0.381
90°
1.02
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-04-18
SOT122A
March 1993
15
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
Studless ceramic package; 4 leads
SOT122D
D
A
Q
c
D
2
H
b
α
4
L
3
H
1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
D
UNIT
A
b
c
D
H
L
Q
α
2
1.58
1.27
4.17
3.27
5.85
5.58
0.18
0.14
7.50
7.23
7.24
6.98
27.56 9.91
25.78 9.14
mm
90°
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-04-18
SOT122D
March 1993
16
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
March 1993
17
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