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BSN10-AMMO [PHILIPS]

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BSN10-AMMO


元器件型号：	BSN10-AMMO
生产厂家：	NXP SEMICONDUCTORS
描述和应用：	暂无描述晶体小信号场效应晶体管
PDF文件：	总8页 (文件大小：78K)
下载文档：	下载PDF数据表文档文件
型号参数：BSN10-AMMO参数

BSN10AMO

TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 175MA I(D) | TO-92

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15 ETC

BSN10AT/R

TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 175MA I(D) | TO-92

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27 ETC

BSN10-D

NYLON INSULATED BUTT SPLICES

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14 PANDUIT

BSN10-L

NYLON INSULATED BUTT SPLICES

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17 PANDUIT

BSN12A

TRANSISTOR 150 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, FET General Purpose Small Signal

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0 PHILIPS

BSN12A

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 PHILIPS

BSN14

NYLON INSULATED BUTT SPLICES

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26 PANDUIT

BSN14-C

NYLON INSULATED BUTT SPLICES

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16 PANDUIT

BSN14-M

NYLON INSULATED BUTT SPLICES

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25 PANDUIT

BSN18

NYLON INSULATED BUTT SPLICES

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16 PANDUIT

BSN18-C

NYLON INSULATED BUTT SPLICES

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13 PANDUIT

BSN18-M

NYLON INSULATED BUTT SPLICES

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22 PANDUIT

BSN20

N-channel enhancement mode vertical D-MOS transistor

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1359 PHILIPS

BSN20

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

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382 DIODES

BSN20,215

BSN20 - N-channel TrenchMOS extremely low level FET TO-236 3-Pin

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0 PHILIPS

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