BSP32-T
更新时间:2024-09-18 18:16:29
品牌:NXP
描述:TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpose Power
BSP32-T 概述
TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpose Power 功率双极晶体管
BSP32-T 规格参数
生命周期: | Obsolete | 零件包装代码: | SC-73 |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.24 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
基于收集器的最大容量: | 20 pF | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
最大关闭时间(toff): | 650 ns | 最大开启时间(吨): | 500 ns |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
BSP32-T 数据手册
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PDF下载DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BSP31; BSP32; BSP33
PNP medium power transistors
Product data sheet
1999 Apr 26
Supersedes data of 1997 Apr 08
NXP Semiconductors
Product data sheet
PNP medium power transistors
BSP31; BSP32; BSP33
FEATURES
PINNING
PIN
• High current (max. 1 A)
• Low voltage (max. 80 V).
DESCRIPTION
1
2, 4
3
base
collector
emitter
APPLICATIONS
• Telephony and general industrial applications.
4
handbook, halfpage
DESCRIPTION
2, 4
PNP medium power transistor in a SOT223 plastic
package. NPN complements: BSP41 and BSP43.
1
3
1
2
3
Top view
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BSP31
−
−
−70
V
V
BSP32; BSP33
−90
VCEO
collector-emitter voltage
BSP31
open base
−
−
−
−
−
−
−
−60
−80
−5
V
V
V
A
A
BSP32; BSP33
VEBO
IC
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open collector
−1
ICM
IBM
Ptot
Tstg
Tj
−2
−200
1.3
mA
W
Tamb = 25 °C; note 1
−65
−
+150
150
+150
°C
°C
°C
Tamb
−65
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 26
2
NXP Semiconductors
Product data sheet
PNP medium power transistors
BSP31; BSP32; BSP33
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
note 1
VALUE
93
UNIT
K/W
K/W
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
Rth j-s
12
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = −60 V
MIN. MAX. UNIT
ICBO
collector cut-off current
−
−
−
−100
−50
nA
μA
nA
IE = 0; VCB = −60 V; Tj = 150 °C
IC = 0; VEB = −5 V
IEBO
hFE
emitter cut-off current
DC current gain
BSP32
−100
IC = −100 μA; VCE = −5 V; note 1
IC = −100 mA; VCE = −5 V; note 1
IC = −500 mA; VCE = −5 V; note 1
10
40
30
−
120
−
DC current gain
BSP31; BSP33
IC = −100 μA; VCE = −5 V; note 1
IC = −100 mA; VCE = −5 V; note 1
IC = −500 mA; VCE = −5 V; note 1
30
100
50
−
−
300
−
VCEsat
collector-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1
IC = −500 mA; IB = −50 mA; note 1
−250
−500
−1
mV
mV
V
−
VBEsat
base-emitter saturation voltage
IC = −150 mA; IB = −15 mA; note 1
IC = −500 mA; IB = −50 mA; note 1
IE = ie = 0; VCB = −10 V; f = 1 MHz
IC = ic = 0; VEB = −0.5 V; f = 1 MHz
IC = −50 mA; VCE = −10 V; f = 100 MHz
−
−
−1.2
20
V
Cc
Ce
fT
collector capacitance
emitter capacitance
transition frequency
−
pF
pF
MHz
−
120
−
100
Switching times (between 10% and 90% levels)
ton
toff
turn-on time
turn-off time
ICon = −100 mA; IBon = −5 mA; IBoff = 5 mA
−
−
500
650
ns
ns
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
1999 Apr 26
3
NXP Semiconductors
Product data sheet
PNP medium power transistors
BSP31; BSP32; BSP33
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
99-09-13
SOT223
SC-73
1999 Apr 26
4
NXP Semiconductors
Product data sheet
PNP medium power transistors
BSP31; BSP32; BSP33
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 Apr 26
5
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/03/pp6
Date of release: 1999 Apr 26
Document order number: 9397 750 05772
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