概述
规格参数
数据手册
替代型号BTA212B-800B,118 概述
BTA212B-800B TRIACs TRIAC
BTA212B-800B,118 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Transferred |
| 零件包装代码： | D2PAK | 包装说明： | TO-263, 3 PIN |
| 针数： | 3 | Reach Compliance Code： | not_compliant |
| HTS代码： | 8541.30.00.80 | 风险等级： | 5.2 |
| 外壳连接： | MAIN TERMINAL 2 | 配置： | SINGLE |
| 关态电压最小值的临界上升速率： | 1000 V/us | 最大直流栅极触发电流： | 50 mA |
| 最大直流栅极触发电压： | 1.5 V | 最大维持电流： | 60 mA |
| JEDEC-95代码： | TO-263AB | JESD-30 代码： | R-PSSO-G2 |
| JESD-609代码： | e3 | 最大漏电流： | 0.5 mA |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 2 | 最高工作温度： | 125 °C |
| 最低工作温度： | -40 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 250 | 认证状态： | Not Qualified |
| 最大均方根通态电流： | 12 A | 重复峰值关态漏电流最大值： | 500 µA |
| 断态重复峰值电压： | 800 V | 子类别： | TRIACs |
| 表面贴装： | YES | 端子面层： | Tin (Sn) |
| 端子形式： | GULL WING | 端子位置： | SINGLE |
| 处于峰值回流温度下的最长时间： | 40 | 触发设备类型： | SNUBBERLESS TRIAC |
| Base Number Matches： | 1 |
BTA212B-800B,118 数据手册
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BTA212B series B
Three quadrant triacs
high commutationꢀ
September 1997
Product specification
ꢀꢁꢂ Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA212B series B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high commutation
triacsin aplastic envelopesuitable for
surface mounting intended for use in
circuitswherehigh staticanddynamic
dV/dt and high dI/dt can occur. These
devices will commutate the full rated
rms current at the maximum rated
junction temperature, without the aid
of a snubber.
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
BTA212B- 500B 600B 800B
600
VDRM
Repetitive peak off-state
voltages
500
800
V
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak on-state
current
12
95
12
95
12
95
A
A
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
main terminal 1
mb
T2
T1
2
main terminal 2
gate
3
2
mb main terminal 2
1
3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
-500
5001
-600
-800
800
VDRM
Repetitive peak off-state
voltages
-
-
6001
IT(RMS)
ITSM
RMS on-state current
full sine wave;
Tmb ≤ 99 ˚C
full sine wave;
Tj = 25 ˚C prior to
surge
12
A
Non-repetitive peak
on-state current
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/μs
-
-
-
95
105
45
A
A
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
A2s
A/μs
100
IGM
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
-
-
-
-
2
5
5
0.5
A
V
W
W
VGM
PGM
PG(AV)
over any 20 ms
period
Tstg
Tj
Storage temperature
Operating junction
temperature
-40
-
150
125
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
September 1997
1
Rev 1.200
ꢁꢂꢃ Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA212B series B
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance full cycle
junction to mounting base half cycle
-
-
-
-
-
60
1.5
2.0
-
K/W
K/W
K/W
Thermal resistance
junction to ambient
in free air
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IGT
Gate trigger current2
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
2
2
2
18
21
34
50
50
50
mA
mA
mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
-
-
-
-
31
34
30
31
1.3
0.7
0.4
0.1
60
90
60
60
1.6
1.5
-
mA
mA
mA
mA
V
V
V
mA
IH
VT
VGT
Holding current
On-state voltage
Gate trigger voltage
VD = 12 V; IGT = 0.1 A
IT = 17 A
VD = 12 V; IT = 0.1 A
-
-
0.25
-
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
Off-state leakage current VD = VDRM(max); Tj = 125 ˚C
ID
0.5
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
dIcom/dt
tgt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 12 A;
without snubber; gate open circuit
ITM = 12 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/μs
1000 4000
-
-
-
V/μs
A/ms
μs
-
-
24
2
2 Device does not trigger in the T2-, G+ quadrant.
September 1997
2
Rev 1.200
ꢁꢂꢃ Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA212B series B
IT(RMS) / A
Tmb(max) / C
Ptot / W
15
10
5
95
20
= 180
120
99 C
1
102.5
110
15
90
60
10
5
30
117.5
125
15
0
0
-50
0
50
Tmb / C
100
150
0
5
10
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS)
versus mounting base temperature Tmb.
,
ITSM / A
IT(RMS) / A
1000
100
10
25
20
15
10
5
dIT/dt limit
I
TSM
time
I
T
T
Tj initial = 25 C max
10ms 100ms
0
0.01
10us
100us
1ms
T / s
0.1
surge duration / s
1
10
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 99˚C.
VGT(Tj)
VGT(25 C)
ITSM / A
100
80
60
40
20
0
1.6
1.4
1.2
1
I
TSM
time
I
T
T
Tj initial = 25 C max
0.8
0.6
0.4
1
10 100
Number of cycles at 50Hz
1000
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997
3
Rev 1.200
ꢁꢂꢃ Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA212B series B
IGT(Tj)
IGT(25 C)
typ
IT / A
40
30
20
10
0
Tj = 125 C
3
2.5
2
T2+ G+
T2+ G-
T2- G-
Tj = 25 C
max
Vo = 1.175 V
Rs = 0.0316 Ohms
1.5
1
0.5
0
0
0.5
1
1.5
VT / V
2
2.5
3
-50
0
50
Tj / C
100
150
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
Zth j-mb (K/W)
10
1
3
2.5
2
unidirectional
bidirectional
0.1
1.5
1
t
P
D
p
0.01
0.001
t
0.5
0
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
IH(Tj)
dIcom/dt (A/ms)
1000
100
10
IH(25C)
3
2.5
2
1.5
1
0.5
0
1
20
40
60
80
100
120
140
-50
0
50
Tj / C
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.12. Typical, critical rate of change of commutating
current dIcom/dt versus junction temperature.
September 1997
4
Rev 1.200
ꢁꢂꢃ Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA212B series B
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
4.5 max
1.4 max
10.3 max
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.13. SOT404 : centre pin connected to mounting base.
Notes
1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.14. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
September 1997
5
Rev 1.200
NXP Semiconductors
Legal information
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
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2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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agreement be valid in which the NXP Semiconductors
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System of IEC 60134) will cause permanent damage to
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Printed in The Netherlands
BTA212B-800B,118 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| T2535-800G-TR | STMICROELECTRONICS | 25A TRIACS | 功能相似 |
|
| T1235-800G-TR | STMICROELECTRONICS | 12A TRIACS | 功能相似 |
|
| T1210-800G-TR | STMICROELECTRONICS | 12A - Logic Level Triac in D2PAK | 功能相似 |
|
BTA212B-800B,118 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BTA212B-800B/T3 | NXP | TRIAC, 800 V, 12 A, SNUBBERLESS TRIAC, TO-263AB, TO-263, 3 PIN | 获取价格 |
|
| BTA212B-800C | NXP | Three quadrant triacs high commutation | 获取价格 |
|
| BTA212B-800E | NXP | Three quadrant triacs guaranteed commutation | 获取价格 |
|
| BTA212B-800E | WEEN | Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable plast | 获取价格 |
|
| BTA212B-800E,118 | NXP | BTA212B-800E | 获取价格 |
|
| BTA212B-800F | NXP | Three quadrant triacs guaranteed commutation | 获取价格 |
|
| BTA212B600BT/R | ETC | TRIAC|600V V(DRM)|12A I(T)RMS|SOT-404 | 获取价格 |
|
| BTA212B600D | ETC | TRIAC|600V V(DRM)|12A I(T)RMS|SOT-404 | 获取价格 |
|
| BTA212B600E | ETC | TRIAC|600V V(DRM)|12A I(T)RMS|SOT-404 | 获取价格 |
|
| BTA212B800E | ETC | TRIAC|800V V(DRM)|12A I(T)RMS|SOT-404 | 获取价格 |
|
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