BU4525DX [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BU4525DX |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总4页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4525DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television
receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
800
12
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
-
A
ICM
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
30
A
Ptot
VCEsat
ICsat
Ths ≤ 25 ˚C
-
45
W
V
IC = 9.0 A; IB = 2.25 A
f = 16 kHz
-
3.0
-
9.0
t.b.f
-
A
f = 70 kHz
IF = 9.0 A
-
A
VF
tf
Diode forward voltage
Fall time
2.2
0.55
t.b.f
V
ICsat = 9.0 A;f = 16 kHz
f = 70 kHz
0.4
t.b.f
µs
µs
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
case
c
base
2
collector
emitter
b
3
Rbe
case isolated
1
2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
800
12
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
IB
Collector current peak value
Base current (DC)
-
30
A
-
8
A
IBM
Base current peak value
Reverse base current peak value 1
Total power dissipation
-
12
A
-IBM
Ptot
Tstg
Tj
-
-
7
A
Ths ≤ 25 ˚C
45
W
˚C
˚C
Storage temperature
Junction temperature
-55
-
150
150
1 Turn-off current.
July 1998
1
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4525DX
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-hs
Rth j-a
Junction to heatsink
Junction to ambient
with heatsink compound
in free air
-
2.8
-
K/W
K/W
35
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
-
-
2500
V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
Collector cut-off current 2
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
1.0
2.0
mA
mA
;
BVEBO
Rbe
VCEOsust
Emitter-base breakdown voltage
Base-emitter resistance
IB = 600 mA
7.5
-
800
13.5
50
-
-
-
-
V
Ω
V
VEB = 7.5 V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA;
L = 25 mH
VCEsat
VBEsat
hFE
hFE
VF
Collector-emitter saturation voltage IC = 9.0 A;IB = 2.25A
-
0.96
-
4.2
-
-
3.0
1.06
-
7.6
2.2
V
V
Base-emitter saturation voltage
DC current gain
IC = 9.0 A;IB = 2.25A
IC = 1.0 A; VCE = 5 V
IC = 9.0 A; VCE = 5 V
IF = 9 A
1.01
t.b.f
5.8
-
Diode forward voltage
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
145
-
pF
Switching times (16 kHz line
deflection circuit)
ICsat = 9.0 A;IB1 = 1.8 A
(IB2 = -4.5 A)
ts
tf
Turn-off storage time
Turn-off fall time
3.7
0.4
4.5
0.55
µs
µs
Switching times (70 kHz line
deflection circuit)
ICsat = t.b.f
ts
tf
Turn-off storage time
Turn-off fall time
t.b.f
t.b.f
t,b,f
t.b.f
µs
µs
2 Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4525DX
MECHANICAL DATA
Dimensions in mm
5.8 max
3.0
16.0 max
Net Mass: 5.88 g
0.7
4.5
3.3
10.0
27
max
25
25.1
25.7
22.5
max
5.1
2.2 max
4.5
18.1
min
1.1
0.4 M
2
3.3
0.95 max
5.45 5.45
Fig.1. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
3
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4525DX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
4
Rev 1.000
相关型号：
©2020 ICPDF网 联系我们和版权申明