概述
数据手册BUK453-100 概述
PowerMOS transistor 功率MOS晶体管
BUK453-100 数据手册
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PDF下载Philips Semiconductors
Product Specification
PowerMOS transistor
BUK453-100A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
BUK453
-100A
100
14
75
175
0.16
-100B
100
13
75
175
0.20
VDS
ID
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
A
W
˚C
Ω
Ptot
Tj
RDS(ON)
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
d
tab
gate
2
drain
g
3
source
tab drain
1 2 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
VDGR
±VGS
Drain-source voltage
-
-
-
-
100
100
30
V
V
V
Drain-gate voltage
RGS = 20 kΩ
Gate-source voltage
-
-100A
14
-100B
ID
Drain current (DC)
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
-
-
-
13
9
A
A
A
ID
Drain current (DC)
10
IDM
Drain current (pulse peak value)
56
52
Ptot
Tstg
Tj
Total power dissipation
Storage temperature
Junction Temperature
Tmb = 25 ˚C
-
-
-
- 55
-
75
175
175
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance junction to
-
-
-
2
-
K/W
K/W
mounting base
Thermal resistance junction to
ambient
60
April 1998
1
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK453-100A/B
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V; ID = 0.25 mA
100
-
-
V
VGS(TO)
Gate threshold voltage
VDS = VGS; ID = 1 mA
2.1
3.0
1
0.1
10
0.15
0.15
4.0
10
1.0
100
0.16
0.20
V
µA
mA
nA
Ω
IDSS
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj = 25 ˚C
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj = 125 ˚C
Gate source leakage current
Drain-source on-state
resistance
-
-
-
-
-
IDSS
IGSS
VGS = ±30 V; VDS = 0 V
RDS(ON)
VGS = 10 V;
ID = 5 A
BUK453-100A
BUK453-100B
Ω
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
gfs
Forward transconductance
VDS = 25 V; ID = 5 A
4.0
5.5
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
-
-
660
140
60
825
200
100
pF
pF
pF
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; ID = 3 A;
VGS = 10 V; RGS = 50 Ω;
Rgen = 50 Ω
-
-
-
-
10
25
60
40
20
40
90
55
ns
ns
ns
ns
Ld
Ld
Ls
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
-
-
3.5
4.5
7.5
-
-
-
nH
nH
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IDR
Continuous reverse drain
-
-
-
14
A
current
IDRM
VSD
Pulsed reverse drain current
Diode forward voltage
-
-
-
-
56
1.5
A
V
IF = 14 A ; VGS = 0 V
1.2
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 14 A; -dIF/dt = 100 A/µs;
VGS = 0 V; VR = 30 V
-
-
90
0.6
-
-
ns
µC
AVALANCHE LIMITING VALUE
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
ID = 14 A ; VDD ≤ 50 V ;
VGS = 10 V ; RGS = 50 Ω
-
-
70
mJ
April 1998
2
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK453-100A/B
Normalised Power Derating
PD%
120
Zth j-mb / (K/W)
1E+01
1E+00
1E-01
1E-02
110
100
90
80
70
60
50
40
30
20
10
0
0.5
0.2
0.1
0.05
t
p
t
P
0.02
p
D =
D
T
0
t
T
0
20
40
60
80
Tmb /
100 120 140 160 180
C
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Fig.1. Normalised power dissipation.
PD% = 100 PD/PD 25 ˚C = f(Tmb)
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
Normalised Current Derating
ID%
ID / A
10
120
110
100
90
80
70
60
50
40
30
20
10
0
28
24
20
16
12
8
20
VGS / V =
15
8
7
6
5
4
4
0
0
20
40
60
80
100 120 140 160 180
0
2
4
6
8
10
Tmb /
C
VDS / V
Fig.2. Normalised continuous drain current.
ID% = 100 ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
ID / A
tp = 10 us
RDS(ON) / Ohm
100
10
1
1.0
0.8
0.6
0.4
0.2
0
A
B
5
5.5
6
VGS / V =
4.5
6.5
RDS(ON) = VDS/ID
100 us
1 ms
7
7.5
DC
10 ms
100 ms
8
10
20
0.1
1
10
100
0
4
8
12
16
20
24
28
VDS / V
ID / A
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
April 1998
3
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK453-100A/B
VGS(TO) / V
ID / A
28
max.
4
3
2
1
0
24
Tj / C =
25
150
typ.
20
16
12
8
min.
4
0
-60
-20
20
60
Tj /
100
140
180
0
2
4
6
8
10
C
VGS / V
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
SUB-THRESHOLD CONDUCTION
ID / A
gfs / S
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
7
6
5
4
3
2
1
0
2 %
typ
98 %
0
1
2
3
4
0
4
8
12
16
20
24
28
VGS / V
ID / A
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Normalised RDS(ON) = f(Tj)
a
C / pF
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10000
1000
100
Ciss
Coss
Crss
10
-60
-20
20
60
Tj /
100
140
180
0
20
40
C
VDS / V
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 5 A; VGS = 10 V
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
April 1998
4
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK453-100A/B
WDSS%
VGS / V
12
120
110
100
90
80
70
60
50
40
30
20
10
0
VDS / V =20
80
10
8
6
4
2
0
20
40
60
80
100
120
140
160
180
0
2
4
6
8
10
12
14
16
Tmb /
C
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 14 A; parameter VDS
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 14 A
IF / A
30
20
10
0
VDD
+
L
VDS
-
VGS
-ID/100
T.U.T.
0
Tj / C = 150
25
R 01
RGS
shunt
0
1
2
VSDS / V
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 LID2 BVDSS/(BVDSS − VDD
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
)
April 1998
5
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK453-100A/B
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
1 2 3
max
(2x)
0,9 max (3x)
0,6
2,4
2,54 2,54
Fig.17. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT78 (TO220) envelopes.
3. Epoxy meets UL94 V0 at 1/8".
April 1998
6
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK453-100A/B
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
April 1998
7
Rev 1.100
BUK453-100 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BUK453-100A | NXP | PowerMOS transistor | 获取价格 |
|
| BUK453-100A,127 | NXP | 14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 获取价格 |
|
| BUK453-100A127 | NXP | TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | 获取价格 |
|
| BUK453-100B | NXP | PowerMOS transistor | 获取价格 |
|
| BUK453-100B,127 | NXP | 13A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 获取价格 |
|
| BUK453-100B/B | NXP | TRANSISTOR TO 220 MOSFET N KANAL | 获取价格 |
|
| BUK453-100B127 | NXP | TRANSISTOR 13 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | 获取价格 |
|
| BUK453-500B | ETC | N-Channel Enhancement MOSFET | 获取价格 |
|
| BUK453-50A | ETC | N-Channel Enhancement MOSFET | 获取价格 |
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| BUK453-50B | ETC | N-Channel Enhancement MOSFET | 获取价格 |
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