A19530LUCX-TN-RSWPCEJ-A
High Feature Three-Wire Hall-Effect Transmission Speed and Direction Sensor IC
暂无信息
ALLEGRO
STM32L031E5T7DTR
Access line ultra-low-power 32-bit MCU Arm®-based Cortex®-M0, up to 32KB Flash, 8KB SRAM, 1KB EEPROM, ADC
可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 静态存储器
STMICROELECTR
BGA8U1BN6
BGA8U1BN6 是用于 LTE 的前端低噪声放大器,覆盖 4.0 Ghz 至 6.0 Ghz 的宽频率范围。在应用配置中,LNA 在 4.5mA 的电流消耗下提供 13.7 dB 增益和 1.6 dB 噪声系数。在旁路模式下,LNA 提供 -7.5 dB 的插入损耗。
放大器 LTE
INFINEON
STM32L031G5U7SDTR
Access line ultra-low-power 32-bit MCU Arm®-based Cortex®-M0, up to 32KB Flash, 8KB SRAM, 1KB EEPROM, ADC
可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 静态存储器
STMICROELECTR
A19530LUCX-TN-FOOPLEJ-A
High Feature Three-Wire Hall-Effect Transmission Speed and Direction Sensor IC
暂无信息
ALLEGRO
STM32L031G4T3SDTR
Access line ultra-low-power 32-bit MCU Arm®-based Cortex®-M0, up to 32KB Flash, 8KB SRAM, 1KB EEPROM, ADC
可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 静态存储器
STMICROELECTR
KYOCERA AVX
AMPHENOL
SAMTEC
WALSIN
VISHAY
MSYSTEM
GLENAIR
ITT
MICROSEMI
YAGEO
ECLIPTEK
ABRACON
MOLEX
VICOR
KEMET
MTRONPTI
TI
PANASONIC
CTS
SCHURTER
KNOWLES
MURATA
TE
TOREX
SILICON
BOURNS
GOLLEDGE
STMICROELECTRONICS
RCD
BEL
NXP
MICROCHIP
TDK
KOA
INFINEON
FOXCONN
EUROQUARTZ
MAXIM
LITTELFUSE
VCC
RENESAS
CDE
IDT
AVAGO
HONEYWELL
ONSEMI
FH
NICHICON
APITECH
ROHM
EPCOS
AGILENT
GRAYHILL
ADI
Carling Technologies
RICOH