BZG04-130 [NXP]
Transient voltage suppressor diodes; 瞬态电压抑制二极管型号: | BZG04-130 |
厂家: | NXP |
描述: | Transient voltage suppressor diodes |
文件: | 总7页 (文件大小:35K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
68
BZG04 series
Transient voltage suppressor
diodes
1996 Sep 19
Preliminary specification
Supersedes data of 1996 Jun 10
Philips Semiconductors
Preliminary specification
Transient voltage suppressor diodes
BZG04 series
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
FEATURES
DESCRIPTION
• Glass passivated
DO-214AC surface mountable
package with glass passivated chip.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
cathode
band
handbook, 4 columns
• UL 94V-O classified plastic
k
a
package
• Transient suppressor stand-off
voltage range:
8.2 to 220 V for 32 types
Top view
Side view
MSA473
• Shipped in 12 mm embossed tape.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PRSM
non-repetitive peak reverse power 10/1000 µs exponential pulse
−
300
W
dissipation
(see Fig.4); Tj = 25 °C prior to
surge; see also Fig.2
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175
+175
°C
°C
1996 Sep 19
2
Philips Semiconductors
Preliminary specification
Transient voltage suppressor diodes
BZG04 series
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
IF = 0.5 A; see Fig.3
MIN.
MAX.
UNIT
−
1.2
V
Per type
Tj = 25 °C unless otherwise specified.
REVERSE
BREAKDOWN
VOLTAGE
REVERSE CURRENT
at STAND-OFF
VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
CLAMPING
VOLTAGE
TYPE
NUMBER
V
(BR)R (V)
at Itest
SZ (%/K) at Itest
V(CL)R (V)
MAX.
IR (µA)
Itest
(mA)
at IRSM (A)
note 1
at VR
(V)
MIN.
MIN.
MAX.
MAX.
BZG04-8V2
BZG04-9V1
BZG04-10
BZG04-11
BZG04-12
BZG04-13
BZG04-15
BZG04-16
BZG04-18
BZG04-20
BZG04-22
BZG04-24
BZG04-27
BZG04-30
BZG04-33
BZG04-36
BZG04-39
BZG04-43
BZG04-47
BZG04-51
BZG04-56
BZG04-62
BZG04-68
BZG04-75
BZG04-82
BZG04-91
BZG04-100
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
14.8
15.7
17.0
18.9
20.9
22.9
25.6
28.4
31.0
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114
20.3
19.1
17.7
15.9
14.4
13.1
11.7
10.6
9.7
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
8.9
7.9
7.1
31
6.5
34
6.0
37
5.5
40
4.9
44
4.6
48
4.2
52
3.8
58
3.5
64
3.2
70
2.9
77
2.6
85
126
2.4
94
5
139
2.2
104
114
5
152
2.0
5
167
1.8
1996 Sep 19
3
Philips Semiconductors
Preliminary specification
Transient voltage suppressor diodes
BZG04 series
REVERSE
TEMPERATURE
BREAKDOWN
COEFFICIENT
VOLTAGE
REVERSE CURRENT
at STAND-OFF
VOLTAGE
TEST
CURRENT
CLAMPING
VOLTAGE
TYPE
NUMBER
V(BR)R (V)
at Itest
SZ (%/K) at Itest
V(CL)R (V)
IR (µA)
Itest
(mA)
at IRSM (A)
note 1
at VR
(V)
MIN.
124
138
153
168
188
208
228
251
MIN.
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
MAX.
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
MAX.
185
204
224
249
276
305
336
380
MAX.
5
5
5
5
5
2
2
2
1.6
1.5
1.3
1.2
1.1
1.0
0.9
0.8
5
5
5
5
5
5
5
5
110
120
130
150
160
180
200
220
BZG04-110
BZG04-120
BZG04-130
BZG04-150
BZG04-160
BZG04-180
BZG04-200
BZG04-220
Note
1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.4.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
25
UNIT
K/W
K/W
K/W
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
note 2
100
150
Notes
1. Device mounted on an Al2O3 printed-circuit board, 0.7 mm thick; thickness of Cu-layer ≥35 µm, see Fig.5.
2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.5.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 19
4
Philips Semiconductors
Preliminary specification
Transient voltage suppressor diodes
BZG04 series
GRAPHICAL DATA
MBH452
MBH453
4
10
3
handbook, halfpage
handbook, halfpage
I
F
P
ZSM
(A)
(W)
3
10
2
2
10
1
10
10
0
0
−2
−1
1
2
10
1
t (ms) 10
p
V (V)
F
Tj = 25 °C prior to surge.
Tj = 25 °C.
Fig.2 Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
Fig.3 Forward current as a function of forward
voltage; typical values.
I
handbook, halfpage
RSM
50
(%)
100
90
4.5
50
10
50
2.5
t
t
1
1.25
MSB213
t
MGD521
2
In accordance with “IEC 60-1, Section 8”.
t1 = 10 µs.
t2 = 1000 µs.
Dimensions in mm.
Fig.4 Non-repetitive peak reverse current pulse
definition.
Fig.5 Printed-circuit board for surface mounting.
1996 Sep 19
5
Philips Semiconductors
Preliminary specification
Transient voltage suppressor diodes
BZG04 series
PACKAGE OUTLINE
5.5
5.1
4.5
4.3
2.3
2.0
0.05
0.2
3.3
2.7
MSA414
2.8 1.6
2.4 1.4
Dimensions in mm.
The marking band indicates the cathode.
Fig.6 DO-214AC; SOD106.
1996 Sep 19
6
Philips Semiconductors
Preliminary specification
Transient voltage suppressor diodes
BZG04 series
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 19
7
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