BZV49-C10 [PHILIPS]
Zener Diode, 10V V(Z), 5%, 1W,;
| 型号： | BZV49-C10 |
| 厂家： | 
PHILIPS SEMICONDUCTORS |
| 描述： | Zener Diode, 10V V(Z), 5%, 1W, 测试 二极管 |
| 文件： | 总12页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BZV49 series
Voltage regulator diodes
1999 May 11
Product specification
Supersedes data of 1996 Oct 28
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
FEATURES
PINNING
• Total power dissipation: max. 1 W
• Tolerance series: approx. ±5%
PIN
DESCRIPTION
1
2
3
anode
anode
cathode
• Working voltage range:
nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power
dissipation: max. 40 W.
handbook, halfpage
APPLICATIONS
• General regulation functions.
2
1
DESCRIPTION
Medium-power voltage regulator
diodes in a SOT89 plastic SMD
package.
3
The diodes are available in the
normalized E24 approx. ±5%
tolerance range. The series consists
of 37 types with nominal working
voltages from 2.4 to 75 V
1
3
2
Bottom view
MAM244
(BZV49-C2V4 to BZV49-C75).
Fig.1 Simplified outline (SOT89) and symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZV49-C2V4
BZV49-C2V7
BZV49-C3V0
BZV49-C3Y3
BZV49-C3V6
BZV49-C3V9
BZV49-C4V3
BZV49-C4V7
BZV49-C5V1
BZV49-C5V6
2Y4
2Y7
3Y0
3Y3
3Y6
3Y9
4Y3
4Y7
5Y1
5Y6
BZV49-C6V2
BZV49-C6V8
BZV49-C7V5
BZV49-C8V2
BZV49-C9V1
BZV49-C10
BZV49-C11
BZV49-C12
BZV49-C13
BZV49-C15
6Y2
6Y8
7Y5
8Y2
9Y1
10Y
11Y
12Y
13Y
15Y
BZV49-C16
BZV49-C18
BZV49-C20
BZV49-C22
BZV49-C24
BZV49-C27
BZV49-C30
BZV49-C33
BZV49-C36
BZV49-C39
16Y
18Y
20Y
22Y
24Y
27Y
30Y
33Y
36Y
39Y
BZV49-C43
BZV49-C47
BZV49-C51
BZV49-C56
BZV49-C62
BZV49-C68
BZV49-C75
−
43Y
47Y
51Y
56Y
62Y
68Y
75Y
−
−
−
−
−
1999 May 11
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
IF
PARAMETER
CONDITIONS
MIN.
MAX.
250
UNIT
mA
continuous forward current
−
IZSM
non-repetitive peak reverse current tp = 100 µs; square wave;
Tj = 25 °C prior to surge
see Table
“Per type”
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
−
1
W
W
PZSM
non-repetitive peak reverse power tp = 100 µs; square wave;
40
dissipation
Tj = 25 °C prior to surge; see Fig.2
Tstg
Tj
storage temperature
junction temperature
−65
+150
150
°C
°C
−
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
IF = 50 mA; see Fig.3
1
V
1999 May 11
3
Per type
Tj = 25 °C unless otherwise specified.
WORKING
VOLTAGE
VZ (V)
DIFFERENTIAL
RESISTANCE
rdif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 4 and 5
TEST
CURRENT
IZtest (mA) at f = 1 MHz;
at VR = 0 V
DIODE CAP.
Cd (pF)
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
BZV49-
CXXX
at IZtest
at IZtest
at tp = 100 µs;
Tamb = 25 °C
IR (µA)
VR
(V)
MIN. MAX.
TYP.
MAX.
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
MIN. TYP. MAX.
MAX.
MAX.
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
2.2
2.5
2.6
2.9
70
75
80
85
85
85
80
50
40
15
6
−3.5 −1.6
−3.5 −2.0
−3.5 −2.1
−3.5 −2.4
−3.5 −2.4
−3.5 −2.5
−3.5 −2.5
0
0
0
0
0
0
0
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
50
20
10
5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
2.8
3.2
3.1
3.5
3.4
3.8
5
3.7
4.1
3
4.0
4.6
3
4.4
5.0
−3.5 −1.4 +0.2
−2.7 −0.8 +1.2
−2.0 +1.2 +2.5
3
4.8
5.4
2
5.2
6.0
1
5.8
6.6
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
2.3
3.0
4.0
4.6
5.5
6.4
7.4
3.7
4.5
5.3
6.2
7.0
8.0
9.0
3
6.4
7.2
6
2
7.0
7.9
6
1
7.7
8.7
6
0.7
8.5
9.6
6
0.5
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
8
0.2
10.4
11.4
12.4
13.8
15.3
16.8
18.8
10
10
10
10
10
10
15
85
0.1
11
8.4 10.0
9.4 11.0
85
0.1
12
80
0.1
13
9.2 11.4 13.0
10.4 12.4 14.0
12.4 14.4 16.0
14.4 16.4 18.0
75
0.05
0.05
0.05
0.05
15
75
16
70
18
60
20
WORKING
VOLTAGE
VZ (V)
DIFFERENTIAL
RESISTANCE
rdif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 4 and 5
TEST
CURRENT
IZtest (mA) at f = 1 MHz;
at VR = 0 V
DIODE CAP.
Cd (pF)
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
BZV49-
CXXX
at IZtest
at IZtest
at tp = 100 µs;
Tamb = 25 °C
IR (µA)
VR
(V)
MIN. MAX.
TYP.
20
25
25
30
35
35
40
45
50
60
70
80
90
95
MAX.
55
MIN. TYP. MAX.
16.4 18.4 20.0
18.4 20.4 22.0
21.4 23.4 25.3
24.4 26.6 29.4
27.4 29.7 33.4
30.4 33.0 37.4
33.4 36.4 41.2
37.6 41.2 46.6
42.0 46.1 51.8
46.6 51.0 57.2
52.2 57.0 63.8
58.8 64.4 71.6
65.6 71.7 79.8
73.4 80.2 88.6
MAX.
MAX.
MAX.
1.25
1.25
1.0
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
5
5
2
2
2
2
2
2
2
2
2
2
2
2
60
55
50
50
45
45
45
40
40
40
40
35
35
35
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
15.4
16.8
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
22
24
27
30
33
36
39
43
47
51
56
62
68
75
70
80
80
1.0
80
0.9
90
0.8
130
150
170
180
200
215
240
255
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
15
UNIT
K/W
K/W
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
125
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
GRAPHICAL DATA
MBG801
MBG781
3
10
300
handbook, halfpage
handbook, halfpage
I
P
F
ZSM
(mA)
(W)
2
10
200
(1)
(2)
10
100
1
10
0
0.6
−1
0.8
1.0
1
duration (ms)
10
V
(V)
F
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.2 Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
Fig.3 Forward current as a function of forward
voltage; typical values.
1999 May 11
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
MBG927
1
4V3
S
Z
(mV/K)
3V9
3V6
3V3
3V0
0
−1
−2
−3
2V7
2V4
-3
-2
-1
10
10
10
1
I
(A)
Z
BZV49-C2V4 to C4V3.
Tj = 25 to 150 °C.
Fig.4 Temperature coefficient as a function of working current; typical values.
MBG924
10
handbook, halfpage
S
Z
(mV/K)
10
9V1
5
8V2
7V5
6V8
6V2
5V6
5V1
0
4V7
−5
0
4
8
12
16
20
I
(mA)
Z
BZV49-C4V7 to C10.
Tj = 25 to 150 °C.
Fig.5 Temperature coefficient as a function of
working current; typical values.
1999 May 11
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
3
E
L
H
E
1
2
3
c
b
2
w
M
b
1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
L
min.
UNIT
A
b
b
b
c
D
E
e
e
H
E
w
1
2
3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
4.25
3.75
mm
3.0
1.5
0.8
0.13
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT89
97-02-28
1999 May 11
8
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 11
9
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
NOTES
1999 May 11
10
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
NOTES
1999 May 11
11
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© Philips Electronics N.V. 1999
SCA64
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Printed in The Netherlands
115002/00/03/pp12
Date of release: 1999 May 11
Document order number: 9397 750 05927
相关型号：
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