BZV55-BC12 概述
Voltage regulator diodes 稳压二极管
BZV55-BC12 数据手册
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PDF下载BZV55 series
Voltage regulator diodes
Rev. 5 — 26 January 2011
Product data sheet
1. Product profile
1.1 General description
Low-power voltage regulator diodes in small hermetically sealed glass SOD80C
Surface-Mounted Device (SMD) packages. The diodes are available in the normalized
E24 2 % (BZV55-B) and approximately 5 % (BZV55-C) tolerance range.
The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.
1.2 Features and benefits
Non-repetitive peak reverse power
dissipation: 40 W
Wide working voltage range:
nominal 2.4 V to 75 V (E24 range)
Total power dissipation: 500 mW
Two tolerance series: 2 % and 5 %
Low differential resistance
Small hermetically sealed glass
SMD package
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
0.9
40
Unit
V
VF
forward voltage
IF = 10 mA
-
-
-
-
[1]
PZSM
non-repetitive peak
W
reverse power dissipation
[1] tp = 100 s; square wave; Tj = 25 C prior to surge
2. Pinning information
Table 2.
Pinning
Pin
1
Description
cathode
Simplified outline
Graphic symbol
[1]
k
a
2
anode
2
1
006aaa152
[1] The marking band indicates the cathode.
BZV55 series
NXP Semiconductors
Voltage regulator diodes
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
BZV55-B2V4 to
BZV55-C75[1]
hermetically sealed glass surface-mounted
package; 2 connectors
SOD80C
[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4.
Marking codes
Type number
Marking code
BZV55-B2V4 to BZV55-C75
marking band
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
IF
Parameter
Conditions
Min
Max
250
see
Table 8
and 9
Unit
forward current
-
-
mA
[1]
[1]
IZSM
non-repetitive peak
reverse current
PZSM
Ptot
non-repetitive peak
reverse power dissipation
-
40
W
[2]
[2]
total power dissipation
Tamb 50 C
Ttp 50 C
-
400
mW
mW
C
-
500
Tstg
Tj
storage temperature
junction temperature
65
65
+200
+200
C
[1] tp = 100 s; square wave; Tj = 25 C prior to surge
[2] Device mounted on a ceramic substrate of 10 10 0.6 mm.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max Unit
[1]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
380
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
-
-
300
K/W
[1] Device mounted on a ceramic substrate of 10 10 0.6 mm.
BZV55_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 26 January 2011
2 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
006aab072
3
10
δ = 1
Z
th(j-a)
0.75
0.50
0.33
(K/W)
2
10
0.20
0.10
0.05
0.02
0.01
10
≤ 0.001
1
10
−1
2
3
4
5
1
10
10
10
10
10
t
(ms)
p
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
VF
IR
forward voltage
reverse current
BZV55-B/C2V4
BZV55-B/C2V7
BZV55-B/C3V0
BZV55-B/C3V3
BZV55-B/C3V6
BZV55-B/C3V9
BZV55-B/C4V3
BZV55-B/C4V7
BZV55-B/C5V1
BZV55-B/C5V6
BZV55-B/C6V2
BZV55-B/C6V8
BZV55-B/C7V5
BZV55-B/C8V2
BZV55-B/C9V1
BZV55-B/C10
BZV55-B/C11
BZV55-B/C12
BZV55-B/C13
IF = 10 mA
-
-
0.9
V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 4 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 8 V
VR = 8 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
50
20
10
5
A
A
A
A
A
A
A
A
A
A
A
A
A
nA
nA
nA
nA
nA
nA
nA
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
BZV55-B/C15 to BZV55-B/C75 VR = 0.7VZ(nom)
BZV55_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 26 January 2011
3 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
Table 8.
Characteristics per type; BZV55-B2V4 to BZV55-C24
Tj = 25 C unless otherwise specified.
BZV55- Sel
xxx
Working
voltage
VZ (V)
Differential resistance
dif ()
Temperature
coefficient
SZ (mV/K)
Diode
capacitance
Cd (pF)[1]
Non-repetitive
peak reverse
current
r
IZSM (A)[2]
IZ = 5 mA
IZ = 1 mA
IZ = 5 mA
IZ = 5 mA
Min
2.35
2.2
Max
Typ
Max Typ
Max Min
100
Typ
Max
Max
Max
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
2.45
2.6
275
600
600
600
600
600
600
600
500
480
400
150
80
70
75
80
85
85
85
80
50
40
15
6
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
2.7
2.0
0.4
1.6
0
450
6.0
2.65
2.5
2.75
2.9
300
325
350
375
400
410
425
400
80
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
2.0
2.1
2.4
2.4
2.5
2.5
1.4
0.8
1.2
0
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.94
2.8
3.06
3.2
0
3.23
3.1
3.37
3.5
0
3.53
3.4
3.67
3.8
0
3.82
3.7
3.98
4.1
0
4.21
4.0
4.39
4.6
0
4.61
4.4
4.79
5.0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
5.0
5.2
4.8
5.4
5.49
5.2
5.71
6.0
6.08
5.8
6.32
6.6
40
2.3
6.66
6.4
6.94
7.2
30
6
1.2
3.0
7.35
7.0
7.65
7.9
30
80
6
2.5
4.0
8.04
7.7
8.36
8.7
40
80
6
3.2
4.6
8.92
8.5
9.28
9.6
40
100
150
150
150
6
3.8
5.5
9.8
10.2
10.6
11.2
11.6
12.2
12.7
50
8
4.5
6.4
9.4
11
10.8
10.4
11.8
11.4
50
10
10
5.4
7.4
85
12
50
6.0
8.4
85
BZV55_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 26 January 2011
4 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
Table 8.
Characteristics per type; BZV55-B2V4 to BZV55-C24 …continued
Tj = 25 C unless otherwise specified.
BZV55- Sel
xxx
Working
voltage
VZ (V)
Differential resistance
rdif ()
Temperature
coefficient
SZ (mV/K)
Diode
capacitance
Cd (pF)[1]
Non-repetitive
peak reverse
current
IZSM (A)[2]
IZ = 5 mA
IZ = 1 mA
IZ = 5 mA
IZ = 5 mA
Min
Max
Typ
Max Typ
Max Min
Typ
Max
Max
Max
13
15
16
18
20
22
24
B
C
B
C
B
C
B
C
B
C
B
C
B
C
12.7
12.4
14.7
13.8
15.7
15.3
17.6
16.8
19.6
18.8
21.6
20.8
23.5
22.8
13.3
14.1
15.3
15.6
16.3
17.1
18.4
19.1
20.4
21.2
22.4
23.3
24.5
25.6
50
170
200
200
225
225
250
250
10
10
10
10
15
20
25
30
30
40
45
55
55
70
7.0
9.4
11.0
80
2.5
50
50
50
60
60
60
9.2
11.4
12.4
14.4
15.6
17.6
19.6
13.0
14.0
16.0
18.0
20.0
22.0
75
75
70
60
60
55
2.0
10.4
12.4
12.3
14.1
15.9
1.5
1.5
1.5
1.25
1.25
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 s; square wave; Tj = 25 C prior to surge
BZV55_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 26 January 2011
5 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
Table 9.
Characteristics per type; BZV55-B27 to BZV55-C75
Tj = 25 C unless otherwise specified.
BZV55- Sel
xxx
Working
voltage
VZ (V)
Differential resistance
dif ()
Temperature
coefficient
SZ (mV/K)
Diode
capacitance
Cd (pF)[1]
Non-repetitive
peak reverse
current
r
IZSM (A)[2]
IZ = 2 mA
IZ = 0.5 mA
IZ = 2 mA
IZ = 2 mA
Min
Max
Typ
Max Typ
Max Min
Typ
Max
Max
Max
27
30
33
36
39
43
47
51
56
62
68
75
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
26.5
25.1
29.4
28.0
32.3
31.0
35.3
34.0
38.2
37.0
42.1
40.0
46.1
44.0
50.0
48.0
54.9
52.0
60.8
58.0
66.6
64.0
73.5
70.0
27.5
28.9
30.6
32.0
33.7
35.0
36.7
38.0
39.8
41.0
43.9
46.0
47.9
50.0
52.0
54.0
57.1
60.0
63.2
66.0
69.4
72.0
76.5
79.0
65
300
300
325
350
350
375
375
400
425
450
475
500
25
30
35
35
40
45
50
60
70
80
90
95
80
18.0
20.6
23.3
26.0
28.7
31.4
35.0
38.6
42.2
58.8
65.6
73.4
22.7
25.3
50
1.0
70
80
25.7
28.7
31.8
34.8
38.8
42.9
46.9
52.0
64.4
71.7
80.2
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
50
45
45
45
40
40
40
40
35
35
35
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
75
80
80
90
80
130
150
170
180
200
215
240
255
85
85
90
100
120
150
170
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 s; square wave; Tj = 25 C prior to surge
BZV55_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 26 January 2011
6 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
mbg801
mbg781
3
10
300
P
ZSM
I
F
(W)
(mA)
2
200
10
(1)
(2)
10
100
1
10
0
0.6
−1
0.8
1
1
10
t
(ms)
V
(V)
p
F
(1) Tj = 25 C (prior to surge)
(2) Tj = 150 C (prior to surge)
Tj = 25 C
Fig 2. Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
Fig 3. Forward current as a function of forward
voltage; typical values
mbg782
mbg783
10
0
12
S
S
Z
(mV/K)
Z
11
4V3
(mV/K)
10
9V1
5
−1
3V9
8V2
7V5
6V8
3V6
6V2
5V6
5V1
0
−2
−3
3V3
4V7
3V0
2V4
2V7
−5
0
4
8
12
16
20
0
20
40
60
I
(mA)
Z
I
(mA)
Z
BZV55-B/C2V4 to BZV55-B/C4V3
BZV55-B/C4V7 to BZV55-B/C12
Tj = 25 C to 150 C
Tj = 25 C to 150 C
Fig 4. Temperature coefficient as a function of
working current; typical values
Fig 5. Temperature coefficient as a function of
working current; typical values
BZV55_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 26 January 2011
7 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
8. Package outline
1.60
1.45
0.3
0.3
3.7
3.3
Dimensions in mm
06-03-16
Fig 6. Package outline SOD80C
9. Packing information
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
2500
10000
BZV55-B2V4 to SOD80C
BZV55-C75
4 mm pitch, 8 mm tape and reel
-115
-135
[1] For further information and the availability of packing methods, see Section 13.
BZV55_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 26 January 2011
8 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
10. Soldering
4.55
4.30
2.30
solder lands
solder paste
2.25 1.70 1.60
solder resist
occupied area
Dimensions in mm
0.90
(2x)
sod080c
Fig 7. Reflow soldering footprint SOD80C
6.30
4.90
2.70
1.90
solder lands
solder resist
occupied area
tracks
2.90 1.70
Dimensions in mm
sod080c
Fig 8. Wave soldering footprint SOD80C
BZV55_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 26 January 2011
9 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
11. Revision history
Table 11. Revision history
Document ID
BZV55_SER v.5
Modifications:
Release date
20110126
Data sheet status
Change notice
Supersedes
Product data sheet
-
BZV55_SER v.4
• Section 4 “Marking”: updated
• Table 6 “Thermal characteristics”: changed Rth(j-t) for Rth(j-sp)
• Figure 6: superseded by minimized outline drawing
• Section 12 “Legal information”: updated
BZV55_SER v.4
BZV55 v.3
20070719
20020228
19990521
19960426
Product data sheet
Product specification
Product specification
Product specification
CPCN200508022F BZV55 v.3
-
-
-
BZV55 v.2
BZV55 v.1
-
BZV55 v.2
BZV55 v.1
BZV55_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 26 January 2011
10 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
12.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BZV55_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 26 January 2011
11 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BZV55_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 26 January 2011
12 of 13
BZV55 series
NXP Semiconductors
Voltage regulator diodes
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 26 January 2011
Document identifier: BZV55_SER
BZV55-BC12 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
BZV55-BC13 | NXP | Voltage regulator diodes | 获取价格 | |
BZV55-BC15 | NXP | Voltage regulator diodes | 获取价格 | |
BZV55-BC2V4 | NXP | Voltage regulator diodes | 获取价格 | |
BZV55-BC2V7 | NXP | Voltage regulator diodes | 获取价格 | |
BZV55-BC3V0 | NXP | Voltage regulator diodes | 获取价格 | |
BZV55-BC3V3 | NXP | Voltage regulator diodes | 获取价格 | |
BZV55-BC3V6 | NXP | Voltage regulator diodes | 获取价格 | |
BZV55-BC3V9 | NXP | Voltage regulator diodes | 获取价格 | |
BZV55-BC4V3 | NXP | Voltage regulator diodes | 获取价格 | |
BZV55-BC4V7 | NXP | Voltage regulator diodes | 获取价格 |
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