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元器件品牌
IRF640S
[PHILIPS]
N-channel TrenchMOS transistor; N沟道晶体管的TrenchMOS
元器件型号：
IRF640S
生产厂家：
NXP SEMICONDUCTORS
描述和应用：
N-channel TrenchMOS transistor
N沟道晶体管的TrenchMOS
晶体 晶体管 功率场效应晶体管
PDF文件：
总9页 (文件大小：97K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF640S参数
查看货源
IRF640SPBF
Power MOSFET
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VISHAY
IRF640SPBF
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
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3
VISHAY
IRF640ST4
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-263AB
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ETC
IRF640STRL
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-263AB
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ETC
IRF640STRL
Power MOSFET
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39
VISHAY
IRF640STRL
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3
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0
VISHAY
IRF640STRLPBF
Power MOSFET
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29
VISHAY
IRF640STRLPBF
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
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0
VISHAY
IRF640STRR
Power MOSFET
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24
VISHAY
IRF640STRR
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-263AB
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ETC
IRF640STRRPBF
Power MOSFET
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26
VISHAY
IRF640T
N-channel 200V - 0.15ヘ - 15A - TO-220 MESH OVERLAY⑩ Power MOSFET
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43
STMICROELECTR
IRF640T
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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0
MOTOROLA
IRF641
N-Channel Power MOSFETs, 18A, 150-200V
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241
FAIRCHILD
IRF641
Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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1
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