MRF8S21120HSR3 [PHILIPS]

W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V;
MRF8S21120HSR3
型号: MRF8S21120HSR3
厂家: NXP SEMICONDUCTORS    NXP SEMICONDUCTORS
描述:

W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V

放大器 LTE CD 晶体管
文件: 总14页 (文件大小:561K)
下载:  下载PDF数据表文档文件

MRF8S21140HR3

W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 34 W Avg., 28 V

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0 PHILIPS

MRF8S21140HSR3

W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 34 W Avg., 28 V

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0 PHILIPS

MRF8S21172HR3

MRF8S21172HR3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
42 FREESCALE

MRF8S21172HR3

RF Power Field Effect Transistors

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
16 FREESCALE

MRF8S21172HR3_12

RF Power Field Effect Transistors

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
3 FREESCALE

MRF8S21172HSR3

RF Power Field Effect Transistors

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
5 FREESCALE

MRF8S21200HR6

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
40 FREESCALE

MRF8S21200HR6

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
38 FREESCALE

MRF8S21200HR6_10

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
11 FREESCALE

MRF8S21200HSR6

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
18 FREESCALE

MRF8S21200HSR6

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
36 FREESCALE

MRF8S23120H

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
32 FREESCALE

MRF8S23120HR3

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
5 FREESCALE

MRF8S23120HSR3

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
15 FREESCALE

MRF8S26120HR3

Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2620-2690 MHz, 28 W Avg., 28 V

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0 PHILIPS