NE5530NSIIB [PHILIPS]
Operational Amplifier, 2 Func, BIPolar, PDIP8;
| 型号： | NE5530NSIIB |
| 厂家： | 
PHILIPS SEMICONDUCTORS |
| 描述： | Operational Amplifier, 2 Func, BIPolar, PDIP8 放大器 光电二极管 |
| 文件： | 总6页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
NE5531079A
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
RENESAS
NE5531079A-A
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 5.70 X 5.70 MM, 1.10 MM HEIGHT, LEAD FREE PACKAGE-4
NEC
NE5531079A-A
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
CEL
NE5531079A-T1
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
CEL
NE5531079A-T1
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
RENESAS
NE5531079A-T1-A
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
CEL
NE5531079A-T1A
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
CEL
NE5531079A-T1A
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
RENESAS
NE5531079A-T1A-A
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 5.70 X 5.70 MM, 1.10 MM HEIGHT, LEAD FREE PACKAGE-4
NEC
©2020 ICPDF网 联系我们和版权申明