PBYR735
更新时间：2024-09-18 19:07:23
品牌：PHILIPS
描述：Rectifier Diode, Schottky, 1 Element, 7.5A, 35V V(RRM),
概述
规格参数
数据手册PBYR735 概述
Rectifier Diode, Schottky, 1 Element, 7.5A, 35V V(RRM), 整流二极管
PBYR735 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Transferred |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.80 | 风险等级： | 5.8 |
| 配置： | SINGLE | 二极管类型： | RECTIFIER DIODE |
| 最大正向电压 (VF)： | 0.84 V | JESD-609代码： | e0 |
| 最大非重复峰值正向电流： | 150 A | 元件数量： | 1 |
| 最高工作温度： | 150 °C | 最大输出电流： | 7.5 A |
| 最大重复峰值反向电压： | 35 V | 子类别： | Rectifier Diodes |
| 表面贴装： | NO | 技术： | SCHOTTKY |
| 端子面层： | Tin/Lead (Sn/Pb) | Base Number Matches： | 1 |
PBYR735 数据手册
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PDF下载Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR745 series
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
VR = 40 V/ 45 V
IF(AV) = 7.5 A
VF ≤ 0.57 V
k
1
a
2
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Schottky rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
PIN
DESCRIPTION
cathode
anode
cathode
tab
1
2
The PBYR745 series is supplied in
the conventional leaded SOD59
(TO220AC) package.
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
PBYR7
40
40
40
40
45
45
45
45
VRRM
VRWM
Peak repetitive reverse
-
-
V
V
voltage
Working peak reverse
voltage
Continuous reverse voltage
VR
Tmb ≤ 114 ˚C
-
-
V
A
IF(AV)
Average rectified forward
current
square wave; δ = 0.5; Tmb ≤ 136 ˚C
7.5
15
IFRM
IFSM
Repetitive peak forward
current
square wave; δ = 0.5; Tmb ≤ 136 ˚C
-
A
Non-repetitive peak forward t = 10 ms
-
-
135
150
A
A
current
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
IRRM
Tj
Peak repetitive reverse
surge current
-
-
1
A
Operating junction
temperature
150
175
˚C
˚C
Tstg
Storage temperature
- 65
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction in free air
to ambient
-
-
-
3
-
K/W
K/W
60
November 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR745 series
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 7.5 A; Tj = 125˚C
IF = 15 A; Tj = 125˚C
IF = 15 A
-
-
-
-
-
-
0.45 0.57
0.65 0.72
0.64 0.84
V
V
V
IR
Reverse current
VR = VRWM
0.13
17
1
22
-
mA
mA
pF
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
Cd
Junction capacitance
270
November 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR745 series
0.5
Tmb(max) (C)
D = 1.0
Forward dissipation, PF (W)
8
Vo = 0.42 V
Rs = 0.02 Ohms
7
Reverse current, IR (mA)
125 C
126
129
132
135
138
141
100
10
6
100 C
75 C
5
0.2
0.1
4
1
3
2
1
0
p
t
t
p
50 C
I
D =
T
144
147
150
0.1
t
T
Tj = 25 C
0.01
0
2
4
6
8
10
12
0
25
Reverse voltage, VR (V)
50
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
Fig.4. Typical reverse leakage current; IR = f(VR);
parameter Tj
Forward dissipation, PF (W)
Tmb(max) / C
a = 1.57
Cd / pF
8
7
6
5
4
3
2
1
0
126
129
132
1000
100
10
Vo = 0.42 V
Rs = 0.02 Ohms
1.9
2.2
135
138
2.8
4
141
144
147
150
1
10
100
0
1
2
3
4
5
6
7
8
Average forward current, IF(AV) (A)
VR / V
Fig.2. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
Fig.5. Typical junction capacitance; Cd = f(VR);
f = 1 MHz; Tj = 25˚C to 125 ˚C.
factor = IF(RMS) / IF(AV)
.
Transient thermal impedance, Zth j-mb (K/W)
10
Forward current, IF (A)
50
40
30
20
10
0
Tj = 25 C
Tj = 125 C
1
typ
0.1
max
tp
T
tp
P
D =
D
t
T
0.01
1us
10us 100us 1ms
10ms 100ms
1s
10s
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Forward voltage, VF (V)
pulse width, tp (s)
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance; Zth j-mb = f(tp).
November 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR745 series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
(2x)
1
2
0,9 max (2x)
0,6
2,4
5,08
Fig.7. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
November 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR745 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1998
5
Rev 1.300
PBYR735 相关器件
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| PBYR735-45 | NXP | 7.5A, 45V, SILICON, RECTIFIER DIODE, TO-220AC, 2 PIN | 获取价格 |
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| PBYR735D | PHILIPS | Rectifier Diode, Schottky, 1 Element, 7.5A, 35V V(RRM), | 获取价格 |
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| PBYR735F | NXP | 暂无描述 | 获取价格 |
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| PBYR740 | YAGEO | Rectifier Diode, Schottky, 1 Phase, 1 Element, 7.5A, 40V V(RRM), Silicon | 获取价格 |
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| PBYR740B | NXP | Rectifier diodes Schottky barrier | 获取价格 |
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| PBYR740B/T3 | NXP | 7.5A, 40V, SILICON, RECTIFIER DIODE, PLASTIC PACKAGE-3 | 获取价格 |
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