PDTA123TT,215
更新时间:2024-09-18 14:18:08
品牌:NXP
描述:PDTA123T series - PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open TO-236 3-Pin
PDTA123TT,215 概述
PDTA123T series - PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open TO-236 3-Pin 小信号双极晶体管
PDTA123TT,215 规格参数
是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | TO-236 | 包装说明: | PLASTIC, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.37 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 30 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.25 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
PDTA123TT,215 数据手册
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PDF下载PDTA123T series
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open
Rev. 02 — 3 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP Resistor-Equipped Transistors (RET) family.
Table 1.
Product overview
Type number
Package
NXP
NPN complement
JEITA
SC-75
SC-59A
SC-101
SC-43A
-
JEDEC
PDTA123TE
PDTA123TK
PDTA123TM
PDTA123TS[1]
PDTA123TT
PDTA123TU
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
-
PDTC123TE
PDTC123TK
PDTC123TM
PDTC123TS
PDTC123TT
PDTC123TU
TO-236
-
TO-92
TO-236AB
-
SC-70
[1] Also available in SOT54A and SOT54 variant packages (see Section 2)
1.2 Features
I Built-in bias resistors
I Reduces component count
I Simplifies circuit design
I 100 mA output current capability
I Reduces pick and place costs
1.3 Applications
I Digital applications
I Cost-saving alternative for BC857 series
in digital applications
I Controlling IC inputs
I Switching loads
1.4 Quick reference data
Table 2.
Symbol
VCEO
IO
Quick reference data
Parameter
Conditions
Min
Typ
Max
−50
Unit
V
collector-emitter voltage
output current
open base
-
-
-
-
−100
2.86
mA
kΩ
R1
bias resistor 1 (input)
1.54
2.2
PDTA123T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Symbol
SOT54
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
R1
1
2
3
1
1
1
1
1
001aab347
006aaa217
SOT54A
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
1
2
R1
3
001aab348
006aaa217
SOT54 variant
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
R1
1
2
3
001aab447
006aaa217
SOT23; SOT323; SOT346; SOT416
1
2
3
input (base)
3
3
2
GND (emitter)
output (collector)
R1
1
2
006aaa144
sym009
SOT883
1
2
3
input (base)
1
2
3
2
GND (emitter)
output (collector)
3
R1
Transparent
top view
sym009
PDTA123T_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 3 September 2009
2 of 10
PDTA123T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
SOT416
SOT346
PDTA123TE
PDTA123TK
PDTA123TM
SC-75
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
SC-59A
SC-101
leadless ultra small plastic package; 3 solder lands; SOT883
body 1.0 × 0.6 × 0.5 mm
PDTA123TS[1]
SC-43A
plastic single-ended leaded (through hole) package; SOT54
3 leads
PDTA123TT
PDTA123TU
-
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
SOT23
SC-70
SOT323
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9)
4. Marking
Table 5.
Marking codes
Type number
PDTA123TE
PDTA123TK
PDTA123TM
PDTA123TS
PDTA123TT
PDTA123TU
Marking code[1]
2A
GA
FA
TA123T
ZL*
*1S
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PDTA123T_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 3 September 2009
3 of 10
PDTA123T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IO
Parameter
Conditions
open emitter
open base
Min
Max
−50
−50
−5
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current
-
-
-
-
-
V
open collector
V
−100
−100
mA
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
Ptot
total power dissipation
SOT416
Tamb ≤ 25 °C
[1]
[1]
-
150
250
250
500
250
200
+150
150
+150
mW
mW
mW
mW
mW
mW
°C
SOT346
-
[2][3]
[1]
SOT883
-
SOT54
-
[1]
SOT23
-
[1]
SOT323
-
Tstg
Tj
storage temperature
junction temperature
ambient temperature
−65
-
°C
Tamb
−65
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
6. Thermal characteristics
Table 7.
Symbol Parameter
Rth(j-a) thermal resistance from
Thermal characteristics
Conditions
Min
Typ
Max Unit
in free air
junction to ambient
[1]
[1]
SOT416
-
-
-
-
-
-
-
-
-
-
-
-
833
500
500
250
500
625
K/W
K/W
K/W
K/W
K/W
K/W
SOT346
[2][3]
[1]
SOT883
SOT54
[1]
SOT23
[1]
SOT323
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
PDTA123T_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 3 September 2009
4 of 10
PDTA123T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol Parameter Conditions
ICBO collector-base cut-off VCB = −50 V; IE = 0 A
current
Min
Typ
Max Unit
-
-
−100 nA
ICEO
collector-emitter cut-off VCE = −30 V; IB = 0 A
-
-
-
-
−1
µA
µA
current
VCE = −30 V; IB = 0 A;
−50
Tj = 150 °C
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−100 nA
hFE
DC current gain
VCE = −5 V; IC = −20 mA
IC = −10 mA; IB = −0.5 mA
30
-
-
-
-
VCEsat
collector-emitter
−150 mV
saturation voltage
R1
Cc
bias resistor 1 (input)
collector capacitance
1.54 2.2
2.86 kΩ
VCB = −10 V; IE = ie = 0 A;
-
-
3
pF
f = 1 MHz
006aaa691
006aaa692
500
−1
h
FE
(1)
400
300
200
100
0
V
CEsat
(V)
(2)
(3)
−1
−10
(1)
(2)
(3)
−2
−10
−1
2
−1
2
−10
−1
−10
−10
−10
−1
−10
−10
I
(mA)
I (mA)
C
C
VCE = −5 V
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
PDTA123T_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 3 September 2009
5 of 10
PDTA123T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
8. Package outline
3.1
2.7
1.3
1.0
1.8
1.4
0.95
0.60
3
0.6
0.2
3
0.45
0.15
3.0 1.7
2.5 1.3
1.75 0.9
1.45 0.7
1
2
1
2
0.30
0.15
0.25
0.10
0.50
0.35
0.26
0.10
1.9
1
Dimensions in mm
04-11-04
Dimensions in mm
04-11-11
Fig 3. Package outline SOT416 (SC-75)
Fig 4. Package outline SOT346 (SC-59A/TO-236)
0.62
0.55
0.50
0.46
0.55
0.47
0.45
0.38
4.2
3.6
3
0.30
0.22
0.48
0.40
1.02
0.95
0.65
1
2
4.8
4.4
2.54
0.30
0.22
1.27
3
2
1
0.20
0.12
5.2
5.0
14.5
12.7
0.35
Dimensions in mm
03-04-03
Dimensions in mm
04-11-16
Fig 5. Package outline SOT883 (SC-101)
Fig 6. Package outline SOT54 (SC-43A/TO-92)
0.45
0.38
0.45
0.38
4.2
3.6
4.2
3.6
1.27
0.48
0.40
3 max
1
2.5
max
0.48
0.40
1
2
3
2
4.8
4.4
5.08
4.8
4.4
2.54
1.27
2.54
3
5.2
5.0
14.5
12.7
5.2
5.0
14.5
12.7
Dimensions in mm
04-06-28
Dimensions in mm
05-01-10
Fig 7. Package outline SOT54A
Fig 8. Package outline SOT54 variant
PDTA123T_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 3 September 2009
6 of 10
PDTA123T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
3.0
2.8
1.1
0.9
2.2
1.8
1.1
0.8
0.45
0.15
3
3
0.45
0.15
2.5 1.4
2.1 1.2
2.2 1.35
2.0 1.15
1
2
1
2
0.4
0.3
0.25
0.10
0.48
0.38
0.15
0.09
1.9
1.3
Dimensions in mm
04-11-04
Dimensions in mm
04-11-04
Fig 9. Package outline SOT23 (TO-236AB)
Fig 10. Package outline SOT323 (SC-70)
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000 5000 10000
PDTA123TE
PDTA123TK
PDTA123TM
PDTA123TS
SOT416
SOT346
SOT883
SOT54
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
2 mm pitch, 8 mm tape and reel
bulk, straight leads
-115
-
-135
-135
-315
-
-115
-
-
-
-
-412
SOT54A
tape and reel, wide pitch
-
-
-116
-126
-
tape ammopack, wide pitch
-
-
SOT54 variant bulk, delta pinning
-
-112
PDTA123TT
PDTA123TU
SOT23
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
-215
-115
-235
-135
SOT323
[1] For further information and the availability of packing methods, see Section 12.
PDTA123T_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 3 September 2009
7 of 10
PDTA123T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
10. Revision history
Table 10. Revision history
Document ID
Release date
20090903
Data sheet status
Change notice
Supersedes
PDTA123T_SER_2
Modifications:
Product data sheet
-
PDTA123T_SER_1
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
PDTA123T_SER_1
20060307
Product data sheet
-
-
PDTA123T_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 3 September 2009
8 of 10
PDTA123T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PDTA123T_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 3 September 2009
9 of 10
PDTA123T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information. . . . . . . . . . . . . . . . . . . . . . 7
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 September 2009
Document identifier: PDTA123T_SER_2
PDTA123TT,215 替代型号
型号 | 制造商 | 描述 | 替代类型 | 文档 |
DDTA123TCA-7 | DIODES | PNP PRE-BIASED SMALL SIGNAL SOT-23 DUAL SURFACE MOUNT TRANSISTOR | 功能相似 | |
DDTA123YCA-7 | DIODES | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC | 功能相似 | |
DTA114TKAT146 | ROHM | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-59, | 功能相似 |
PDTA123TT,215 相关器件
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PDTA123YM,315 | NXP | PDTA123Y series - PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm DFN 3-Pin | 获取价格 | |
PDTA123YMB | NXP | 100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, 1 X 0.60 MM, 0.37 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, DFN1006B-3, 3 PIN | 获取价格 | |
PDTA123YMB | NEXPERIA | PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩProduction | 获取价格 |
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