PESD3V3U1UT_技术文档

PESDxU1UT series

Ultra low capacitance ESD protection diode in SOT23 package

Rev. 01 — 11 May 2005

Product data sheet

1. Product proﬁle

1.1 General description

Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23

(TO-236AB) small SMD plastic package designed to protect one high-speed data line

from the damage caused by ESD and other transients.

1.2 Features

■ Unidirectional ESD protection of one line ■ ESD protection > 23 kV

■ Ultra low diode capacitance: C_d= 0.6 pF ■ IEC 61000-4-2; level 4 (ESD)

■ Max. peak pulse power: P_PPup to 200 W ■ IEC 61000-4-5; (surge)

■ Low clamping voltage

1.3 Applications

■ 10/100/1000 Ethernet

■ FireWire

■ Communication systems

■ Local Area Network (LAN) equipment

■ Computers and peripherals

■ High-speed datalines

1.4 Quick reference data

Table 1:

Symbol Parameter

V_RWMreverse stand-off voltage

Quick reference data

Conditions

Min

Typ

Max

Unit

PESD3V3U1UT

PESD5V0U1UT

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

diode capacitance

-

3.3

5.0

12

V

-

V

-

V

-

15

V

-

24

V

[1]

C_d

f = 1 MHz; V_R= 0 V

0.6

1.5

pF

[1] Measured from pin 1 to 2

PESDxU1UT series

Philips Semiconductors

Ultra low capacitance ESD protection diode in SOT23 package

2. Pinning information

Table 2:

Pinning

1

Description

Simpliﬁed outline

Symbol

cathode ESD protection diode

cathode compensation diode

common anode

3

2

3

1

2

1

2

006aaa441

3. Ordering information

Table 3:

Ordering information

Type number

Package

Name

-

Description

Version

SOT23

PESD3V3U1UT

PESD5V0U1UT

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

plastic surface mounted package; 3 leads

4. Marking

Table 4:

Marking codes

Type number

PESD3V3U1UT

PESD5V0U1UT

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

Marking code^[1]

*AP

*AQ

*AR

*AS

*AT

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

9397 750 14912

Product data sheet

Rev. 01 — 11 May 2005

2 of 13

PESDxU1UT series

Philips Semiconductors

Ultra low capacitance ESD protection diode in SOT23 package

5. Limiting values

Table 5:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

[1]

P_PP

peak pulse power

PESD3V3U1UT

PESD5V0U1UT

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

peak pulse current

PESD3V3U1UT

PESD5V0U1UT

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

junction temperature

ambient temperature

storage temperature

8/20 µs

-

80

W

80

200

[1]

I_PP

8/20 µs

-

5

A

-

5

A

-

5

A

-

5

A

-

3

A

T_j

-

150

+150

°C

T_amb

T_stg

−65

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.

9397 750 14912

Product data sheet

Rev. 01 — 11 May 2005

3 of 13

PESDxU1UT series

Philips Semiconductors

Ultra low capacitance ESD protection diode in SOT23 package

Table 6:

ESD maximum ratings

Symbol Parameter

Conditions

Min

Max

Unit

[1] [2]

V_ESD

electrostatic discharge voltage

IEC 61000-4-2

(contact discharge)

PESD3V3U1UT

PESD5V0U1UT

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

PESDxU1UT

-

30

23

10

kV

HBM MIL-STD-883

[1] Device stressed with ten non-repetitive ESD pulses.

[2] Measured from pin 1 to 2

Table 7:

ESD standards compliance

Standard

Conditions

IEC 61000-4-2; level 4 (ESD)

HBM MIL-STD-883; class 3

> 15 kV (air); > 8 kV (contact)

> 4 kV

001aaa631

I

PP

001aaa630

120

100 %

90 %

100 % I ; 8 µs

PP

I

PP

(%)

80

−t

e

50 % I ; 20 µs

PP

40

10 %

t

t = 0.7 ns to 1 ns

r

0

30 ns

60 ns

0

10

20

30

40

t (µs)

Fig 1. 8/20 µs pulse waveform according to

Fig 2. ESD pulse waveform according to

IEC 61000-4-2

IEC 61000-4-5

9397 750 14912

Product data sheet

Rev. 01 — 11 May 2005

4 of 13

PESDxU1UT series

Philips Semiconductors

Ultra low capacitance ESD protection diode in SOT23 package

6. Characteristics

Table 8:

Characteristics

T_amb= 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse stand-off voltage

PESD3V3U1UT

PESD5V0U1UT

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

reverse leakage current

PESD3V3U1UT

PESD5V0U1UT

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

breakdown voltage

PESD3V3U1UT

PESD5V0U1UT

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

diode capacitance

clamping voltage

PESD3V3U1UT

-

3.3

5.0

12

15

24

V

I_RM

V_RWM= 3.3 V

V_RWM= 5.0 V

V_RWM= 12 V

V_RWM= 15 V

V_RWM= 24 V

I_R= 5 mA

-

0.25

0.03

< 1

2

µA

nA

1

50

< 1

[2]

V_BR

5.8

7.0

14.2

17.1

25.4

-

6.4

6.9

V

7.6

8.2

V

15.0

18.9

27.8

0.6

16.7

20.3

30.3

1.5

V

[2]

C_d

f = 1 MHz; V_R= 0 V

pF

[1] [2]

V_CL

I_PP= 1 A

I_PP= 5 A

I_PP= 1 A

I_PP= 5 A

I_PP= 1 A

I_PP= 5 A

I_PP= 1 A

I_PP= 5 A

I_PP= 1 A

I_PP= 3 A

I_R= 1 mA

-

9

V

20

12

21

23

39

28

53

40

76

PESD5V0U1UT

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

r_dif

differential resistance

PESD3V3U1UT

PESD5V0U1UT

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

-

400

80

Ω

200

225

300

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.

[2] Measured from pin 1 to 2

9397 750 14912

Product data sheet

Rev. 01 — 11 May 2005

5 of 13

PESDxU1UT series

Philips Semiconductors

Ultra low capacitance ESD protection diode in SOT23 package

I

006aaa442

10

I

R

I

R(25˚C)

V

CL BR

RWM

I

RM

R

1

−

+

P-N

−1

I

10

PP

−100

−50

0

50

100

150

T (°C)

j

006aaa407

PESD3V3U1UT; PESD5V0U1UT

I_Ris less than 10 nA at 150 °C for:

PESD12VU1UT; PESD15VU1UT; PESD24VU1UT

Fig 3. V-I characteristics

Fig 4. Relative variation of reverse leakage current as

a function of junction temperature; typical

values

9397 750 14912

Product data sheet

Rev. 01 — 11 May 2005

6 of 13

PESDxU1UT series

Philips Semiconductors

Ultra low capacitance ESD protection diode in SOT23 package

7. Application information

The PESDxU1UT series is designed for protection of high-speed datalines from damage

caused by ESD and surge pulses. PESDxU1UT devices combine an ESD protection

diode and an ultra low capacitance compensation diode to ensure an effective device

capacitance as low as 0.6 pF. The PESDxU1UT series provides a surge capability of up to

200 W per line for an 8/20 µs waveform.

protected data line

2

1

2

3

n.c.

ground

PESDxU1UT

006aaa443

Two PESDxU1UT devices in anti-parallel conﬁguration provide ESD protection in a

common-mode application.

The two PESDxU1UT devices should be connected as follows:

protected data line is connected to

device 1 / pin 2

device 2 / pin 1

Ground is connected to

device 1 / pin 1

device 2 / pin 2

pin 3 is not connected for both devices

Fig 5. Bi-directional ESD protection of one line, common mode

I/O 1

2

1

2

3

ETHERNET

TRANSCEIVER

n.c.

I/O 2

PESDxU1UT

006aaa444

Two PESDxU1UT devices in anti-parallel conﬁguration provide ESD protection in a

differential-mode conﬁguration as e.g. for Ethernet applications.

The two PESDxU1UT should be connected as follows:

I/O line 1 is connected to

device 1 / pin 2

device 2 / pin 1

I/O line 2 is connected to

device 1 / pin 1

device 2 / pin 2

pin 3 is not connected for both devices

Fig 6. Differential mode Ethernet protection

9397 750 14912

Product data sheet

Rev. 01 — 11 May 2005

7 of 13

PESDxU1UT series

Philips Semiconductors

Ultra low capacitance ESD protection diode in SOT23 package

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the PESDxU1UT as close to the input terminal or connector as possible.

2. The path length between the PESDxU1UT and the protected line should be

minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all printed-circuit board conductive loops including power and ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer printed-circuit

boards, use ground vias.

9397 750 14912

Product data sheet

Rev. 01 — 11 May 2005

8 of 13

PESDxU1UT series

Philips Semiconductors

Ultra low capacitance ESD protection diode in SOT23 package

8. Test information

ESD TESTER

4 GHz DIGITAL

OSCILLOSCOPE

RG 223/U

50 Ω coax

R

Z

450 Ω

10×

ATTENUATOR

C

Z

50 Ω

D.U.T.

(Device

Under

Test)

IEC 61000-4-2 network

= 150 pF; R = 330 Ω

C

Z

vertical scale = 20 V/div; horizontal scale = 50 ns/div

PESD24VU1UT

vertical scale = 200 V/div

horizontal scale = 50 ns/div

GND

PESD15VU1UT

PESD12VU1UT

PESD5V0U1UT

PESD3V3U1UT

GND

unclamped +1 kV ESD voltage waveform

clamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network)

GND

vertical scale = 200 V/div

horizontal scale = 50 ns/div

vertical scale = 20 V/div

horizontal scale = 50 ns/div

unclamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network)

clamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network)

006aaa445

Fig 7. ESD clamping test set-up and waveforms

9397 750 14912

Product data sheet

Rev. 01 — 11 May 2005

9 of 13

PESDxU1UT series

Philips Semiconductors

Ultra low capacitance ESD protection diode in SOT23 package

9. Package outline

3.0

2.8

1.1

0.9

3

0.45

0.15

2.5 1.4

2.1 1.2

1

2

0.48

0.38

0.15

0.09

1.9

Dimensions in mm

04-11-04

Fig 8. Package outline SOT23 (TO-236AB)

10. Packing information

Table 9:

Packing methods

The -xxx numbers are the last three digits of the 12NC ordering code. ^[1]

Type number

Package

Description

Packing quantity

3000

-215

10000

PESD3V3U1UT SOT23

PESD5V0U1UT

4 mm pitch, 8 mm tape and reel

-235

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

[1] For further information and the availability of packing methods, see Section 16.

9397 750 14912

Product data sheet

Rev. 01 — 11 May 2005

10 of 13

PESDxU1UT series

Philips Semiconductors

Ultra low capacitance ESD protection diode in SOT23 package

11. Revision history

Table 10: Revision history

Document ID

Release date Data sheet status

20050511 Product data sheet

Change notice Doc. number

9397 750 14912

Supersedes

PESDXU1UT_SER_1

-

9397 750 14912

Product data sheet

Rev. 01 — 11 May 2005

11 of 13

PESDxU1UT series

Philips Semiconductors

Ultra low capacitance ESD protection diode in SOT23 package

12. Data sheet status

Level Data sheet status^[1]Product status^{[2] [3]}

Deﬁnition

I

Objective data

Development

This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II

Preliminary data

Qualiﬁcation

This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III

Product data

Production

This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

[1]

[2]

Please consult the most recently issued data sheet before initiating or completing a design.

The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3]

For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

13. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

15. Trademarks

Notice — All referenced brands, product names, service names and

14. Disclaimers

trademarks are the property of their respective owners.

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

16. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

9397 750 14912

Product data sheet

Rev. 01 — 11 May 2005

12 of 13

PESDxU1UT series

Philips Semiconductors

Ultra low capacitance ESD protection diode in SOT23 package

17. Contents

1

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

Application information. . . . . . . . . . . . . . . . . . . 7

Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

Packing information. . . . . . . . . . . . . . . . . . . . . 10

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12

Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Contact information . . . . . . . . . . . . . . . . . . . . 12

3

4

5

6

7

8

9

10

11

12

13

14

15

16

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights.

Date of release: 11 May 2005

Document number: 9397 750 14912

Published in The Netherlands


型号：	PESD3V3U1UT
厂家：	NXP
描述：	Ultra low capacitance ESD protection diode in SOT23 package 采用SOT23封装的超低电容ESD保护二极管瞬态抑制器二极管光电二极管局域网
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