PESD3V3V4UW_技术文档

PESDxV4UW series

Very low capacitance quadruple ESD protection diode arrays

in SOT665 package

Rev. 01 — 22 April 2005

Product data sheet

1. Product proﬁle

1.1 General description

Very low capacitance quadruple ElectroStatic Discharge (ESD) protection diode arrays in

ultra small SOT665 plastic package designed to protect up to four signal lines from the

damage caused by ESD and other transients.

1.2 Features

■ ESD protection of up to four lines

■ Very low diode capacitance

■ Low clamping voltage

■ Ultra low leakage current: I_RM= 3 nA

■ ESD protection up to 12 kV

■ IEC 61000-4-2; level 4 (ESD)

1.3 Applications

■ Computers and peripherals

■ Audio and video equipment

■ Cellular handsets and accessories

■ Communication systems

■ Portable electronics

■ Subscriber Identity Module (SIM) card

protection

1.4 Quick reference data

Table 1:

Symbol

V_RWM

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

reverse stand-off voltage

PESD3V3V4UW

PESD5V0V4UW

diode capacitance

-

3.3

5.0

V

C_d

f = 1 MHz;

see Figure 5;

V_R= 0 V

PESD3V3V4UW

PESD5V0V4UW

-

15

12

18

15

pF

PESDxV4UW series

Philips Semiconductors

Very low capacitance quadruple ESD protection diode arrays

2. Pinning information

Table 2:

Pinning

1

Description

cathode 1

Simpliﬁed outline

Symbol

5

4

2

common anode

cathode 2

1

3

4

5

3

2

4

cathode 3

5

cathode 4

1

2

3

sym050

3. Ordering information

Table 3:

Ordering information

Type number

Package

Name

-

Description

Version

PESD3V3V4UW

PESD5V0V4UW

plastic surface mounted package; 5 leads

SOT665

4. Marking

Table 4:

Marking codes

Type number

PESD3V3V4UW

PESD5V0V4UW

Marking code

W1

W2

5. Limiting values

Table 5:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

[1] [2]

P_PP

peak pulse power

PESD3V3V4UW

PESD5V0V4UW

peak pulse current

PESD3V3V4UW

PESD5V0V4UW

8/20 µs

-

16

W

[1] [2]

I_PP

8/20 µs

-

1.5

A

9397 750 14481

Product data sheet

Rev. 01 — 22 April 2005

2 of 11

PESDxV4UW series

Philips Semiconductors

Very low capacitance quadruple ESD protection diode arrays

Table 5:

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

T_j

Parameter

Conditions

Min

-

Max

150

Unit

°C

junction temperature

ambient temperature

storage temperature

T_amb

T_stg

−65

+150

°C

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5; see

Figure 1.

[2] Measured from pin 1, 3, 4 or 5 to 2.

Table 6:

Symbol Parameter

V_ESDelectrostatic discharge voltage

ESD maximum ratings

Conditions

Min

Max

Unit

[1] [2]

IEC 61000-4-2

(contact discharge)

PESD3V3V4UW

PESD5V0V4UW

PESDxV4UW series

-

12

10

kV

HBM MIL-STD 883

[1] Device stressed with ten non-repetitive ESD pulses; see Figure 2.

[2] Measured from pin 1, 3, 4 or 5 to 2.

Table 7:

ESD standards compliance

Standard

Conditions

> 8 kV (contact)

> 4 kV

IEC 61000-4-2; level 4 (ESD); see Figure 2

HBM MIL-STD 883; class 3

001aaa631

I

PP

001aaa630

120

100 %

90 %

100 % I ; 8 µs

PP

I

PP

(%)

80

−t

e

50 % I ; 20 µs

PP

40

10 %

t

t = 0.7 ns to 1 ns

r

0

30 ns

0

10

20

30

40

t (µs)

60 ns

Fig 1. 8/20 µs pulse waveform according to

Fig 2. ESD pulse waveform according to

IEC 61000-4-2

IEC 61000-4-5

9397 750 14481

Product data sheet

Rev. 01 — 22 April 2005

3 of 11

PESDxV4UW series

Philips Semiconductors

Very low capacitance quadruple ESD protection diode arrays

6. Characteristics

Table 8:

Characteristics

T_amb= 25 °C unless otherwise speciﬁed.

Symbol

Per diode

V_RWM

Parameter

Conditions

Min

Typ

Max

Unit

reverse stand-off voltage

PESD3V3V4UW

-

3.3

5.0

V

PESD5V0V4UW

I_RM

V_BR

C_d

reverse leakage current

PESD3V3V4UW

see Figure 6;

V_RWM= 3.3 V

V_RWM= 5.0 V

I_R= 1 mA

-

40

3

300

25

nA

PESD5V0V4UW

breakdown voltage

PESD3V3V4UW

5.3

6.4

5.6

6.8

5.9

7.2

V

PESD5V0V4UW

diode capacitance

PESD3V3V4UW

f = 1 MHz; see Figure 5;

V_R= 0 V

-

15

9

18

12

15

9

pF

V_R= 3.3 V

PESD5V0V4UW

V_R= 0 V

12

6

V_R= 5 V

[1] [2]

V_CL

clamping voltage

PESD3V3V4UW

I_PP= 1 A

I_PP= 2 A

I_PP= 1 A

I_PP= 1.7 A

I_R= 1 mA

-

9

V

11

13

PESD5V0V4UW

r_dif

differential resistance

PESD3V3V4UW

PESD5V0V4UW

-

200

100

Ω

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5; see Figure 1.

[2] Measured from pin 1, 3, 4 or 5 to 2.

9397 750 14481

Product data sheet

Rev. 01 — 22 April 2005

4 of 11

PESDxV4UW series

Philips Semiconductors

Very low capacitance quadruple ESD protection diode arrays

006aaa261

001aaa633

2

10

1.2

P

PP

P

PP(25 °C)

P

PP

(W)

0.8

10

0.4

1

0

2

3

4

1

10

0

50

100

150

200

t

(µs)

T (°C)

j

p

T_amb= 25 °C

Fig 3. Peak pulse power dissipation as a function of

exponential pulse duration t_p; typical values

Fig 4. Relative variation of peak pulse power as a

function of junction temperature; typical values

006aaa263

006aaa262

10

16

C

d

(pF)

I

at T

RM

14

I

at 25 °C

RM

12

10

8

1

(1)

(2)

−1

10

6

−100

−50

0

50

100

150

0

1

2

3

4

5

T (°C)

j

V

(V)

R

f = 1 MHz; T_amb= 25 °C

(1) PESD3V3V4UW

PESD3V3V4UW

PESD5V0V4UW

(2) PESD5V0V4UW

Fig 5. Diode capacitance as a function of reverse

voltage; typical values

Fig 6. Relative variation of reverse leakage current as

a function of junction temperature; typical

values

9397 750 14481

Product data sheet

Rev. 01 — 22 April 2005

5 of 11

PESDxV4UW series

Philips Semiconductors

Very low capacitance quadruple ESD protection diode arrays

7. Application information

The PESDxV4UW series is designed for protection of up to four unidirectional data lines

from the damage caused by ESD and surge pulses. The PESDxV4UW series may be

used on lines where the signal polarities are above or below ground. The PESDxV4UW

series provides a surge capability of 16 W per line for an 8/20 µs waveform.

Data- or transmission lines

PESDxV4UW

1

2

3

5

4

1

2

3

5

4

n.c.

Unidirectional protection of 4 lines

Bidirectional protection of 3 lines

006aaa267

Fig 7. Application diagram

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the PESDxV4UW as close to the input terminal or connector as possible.

2. The path length between the PESDxV4UW and the protected line should be

minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all printed-circuit board conductive loops including power and ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer printed-circuit

boards, use ground vias.

9397 750 14481

Product data sheet

Rev. 01 — 22 April 2005

6 of 11

PESDxV4UW series

Philips Semiconductors

Very low capacitance quadruple ESD protection diode arrays

8. Test information

ESD TESTER

4 GHz DIGITAL

OSCILLOSCOPE

RG 223/U

50 Ω coax

R

Z

450 Ω

10×

ATTENUATOR

C

50 Ω

Z

D.U.T.

Device

Under

Test

PESDxV4UW

IEC 61000-4-2 network

= 150 pF; R = 330 Ω

C

Z

vertical scale = 200 V/div

horizontal scale = 50 ns/div

vertical scale = 5 V/div

horizontal scale = 50 ns/div

PESD3V3V4UW

GND

PESD5V0V4UW

GND

unclamped +1 kV ESD voltage waveform

clamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network)

GND

vertical scale = 200 V/div

horizontal scale = 50 ns/div

vertical scale = 5 V/div

horizontal scale = 50 ns/div

unclamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network)

clamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network)

006aaa265

Fig 8. ESD clamping test set-up and waveforms

9397 750 14481

Product data sheet

Rev. 01 — 22 April 2005

7 of 11

PESDxV4UW series

Philips Semiconductors

Very low capacitance quadruple ESD protection diode arrays

9. Package outline

1.7

1.5

0.6

0.5

5

4

0.3

0.1

1.7 1.3

1.5 1.1

1

2

3

0.18

0.08

0.27

0.17

0.5

1

Dimensions in mm

04-11-08

Fig 9. Package outline SOT665

10. Packing information

Table 9:

Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code. ^[1]

Type number

Package

Description

Packing quantity

4000

PESD3V3V4UW SOT665

PESD5V0V4UW

4 mm pitch, 8 mm tape and reel

-115

[1] For further information and the availability of packing methods, see Section 15.

9397 750 14481

Product data sheet

Rev. 01 — 22 April 2005

8 of 11

PESDxV4UW series

Philips Semiconductors

Very low capacitance quadruple ESD protection diode arrays

11. Revision history

Table 10: Revision history

Document ID

Release date Data sheet status

20050422 Product data sheet

Change notice Doc. number

9397 750 14481

Supersedes

PESDXV4UW_SER_1

-

9397 750 14481

Product data sheet

Rev. 01 — 22 April 2005

9 of 11

PESDxV4UW series

Philips Semiconductors

Very low capacitance quadruple ESD protection diode arrays

12. Data sheet status

Level Data sheet status^[1]Product status^{[2] [3]}

Deﬁnition

I

Objective data

Development

This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II

Preliminary data

Qualiﬁcation

This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III

Product data

Production

This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

[1]

[2]

Please consult the most recently issued data sheet before initiating or completing a design.

The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3]

For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

13. Deﬁnitions

14. Disclaimers

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

15. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

9397 750 14481

Product data sheet

Rev. 01 — 22 April 2005

10 of 11

PESDxV4UW series

Philips Semiconductors

Very low capacitance quadruple ESD protection diode arrays

16. Contents

1

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

Application information. . . . . . . . . . . . . . . . . . . 6

Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

Packing information. . . . . . . . . . . . . . . . . . . . . . 8

Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10

Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Contact information . . . . . . . . . . . . . . . . . . . . 10

3

4

5

6

7

8

9

10

11

12

13

14

15

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights.

Date of release: 22 April 2005

Document number: 9397 750 14481

Published in The Netherlands


型号：	PESD3V3V4UW
厂家：	NXP
描述：	Very low capacitance quadruple ESD protection diode arrays in SOT665 package 在SOT665封装非常低电容ESD四重保护二极管阵列瞬态抑制器二极管
文件：	总11页 (文件大小：72K)
中文：	中文翻译
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