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PHB2N50 [NXP]

PowerMOS transistor; 功率MOS晶体管
PHB2N50
型号: PHB2N50
厂家: NXP    NXP
描述:

PowerMOS transistor
功率MOS晶体管

晶体 晶体管
文件: 总7页 (文件大小:61K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

PHB2N50E

PowerMOS transistors Avalanche energy rated

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PHB2N50E/T3

TRANSISTOR 2 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-404, 3 PIN, FET General Purpose Power

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PHB2N60

TRANSISTOR 2.8 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

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PHB2N60E

PowerMOS transistors Avalanche energy rated

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PHB2N60E/T3

TRANSISTOR 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-404, 3 PIN, FET General Purpose Power

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NXP

PHB2N60E118

TRANSISTOR 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

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PHB2N60T/R

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.8A I(D) | SOT-404

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ETC

PHB3055E

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | SOT-404

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ETC

PHB30NQ15T

N-channel TrenchMOS transistor

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PHB32N06LT

N-channel enhancement mode field effect transistor

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PHB32N06LT

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PHB32N06LT,118

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PHB33NQ20T

N-channel TrenchMOS⑩ standard level FET

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PHB33NQ20T

N-channel TrenchMOS standard level FETProduction

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PHB33NQ20T/T3

TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,32.7A I(D),TO-263AB

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PHB34NQ10T

N-channel TrenchMOS transistor

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PHB34NQ10T/T3

35A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET

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PHB36N06E

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PHB37N06LT

TrenchMOS transistor Logic level FET

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PHB37N06LT/T3

TRANSISTOR 37 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

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NXP