PHX6NA60E [PHILIPS]

PowerMOS transistors Low capacitance Avalanche energy rated; 功率MOS晶体管的低电容额定雪崩能量
元器件型号: PHX6NA60E
生产厂家: NXP SEMICONDUCTORS
描述和应用:

PowerMOS transistors Low capacitance Avalanche energy rated
功率MOS晶体管的低电容额定雪崩能量

晶体晶体管
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Philips Semiconductors
Objective specification
PowerMOS transistors
Low capacitance
Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Low feedback capacitance
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
PHX6NA60E
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 600 V
g
I
D
= 3.9 A
R
DS(ON)
1.2
s
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect
power
transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The PHX6NA60E is supplied in the
SOT186A full pack, isolated
package.
PINNING
PIN
1
2
3
case
gate
drain
source
isolated
DESCRIPTION
SOT186A
case
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
CONDITIONS
T
j
= 25 ˚C to 150˚C
T
j
= 25 ˚C to 150˚C; R
GS
= 20 kΩ
T
hs
= 25 ˚C; V
GS
= 10 V
T
hs
= 100 ˚C; V
GS
= 10 V
T
hs
= 25 ˚C
T
hs
= 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
±
30
3.9
2.6
26
45
150
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
E
AR
I
AS
, I
AR
Single pulse avalanche
energy
Repetitive avalanche energy
1
Avalanche current
CONDITIONS
Unclamped inductive load, ID = 6.5A;
V
DD
50 V; starting T
j
= 25˚C; R
GS
= 50
Ω;
V
GS
= 10 V
MIN.
-
-
-
MAX.
570
9.5
6.5
UNIT
mJ
mJ
A
1
pulse width and repetition rate limited by T
j
max.
January 1998
1
Rev 1.000
Philips Semiconductors
Objective specification
PowerMOS transistors
Low capacitance
Avalanche energy rated
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from all
three terminals to external
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
65% ; clean and dustfree
MIN.
-
PHX6NA60E
TYP.
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-hs
R
th j-a
Thermal resistance junction
to heatsink
Thermal resistance junction
to ambient
CONDITIONS
with heatsink compound
MIN.
-
-
TYP. MAX. UNIT
-
60
2.78
-
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Drain-source breakdown
voltage
∆V
(BR)DSS
/ Drain-source breakdown
∆T
j
voltage temperature
coefficient
Drain-source on resistance
R
DS(ON)
V
GS(TO)
Gate threshold voltage
g
fs
Forward transconductance
I
DSS
Drain-source leakage current
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
s
C
iss
C
oss
C
rss
V
(BR)DSS
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
V
DS
= V
GS
; I
D
= 0.25 mA
MIN.
600
-
-
2.0
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
0.1
-
3.0
4.5
2
50
10
-
7
23
-
-
-
-
3.5
7.5
-
140
40
-
-
1.2
4.0
-
100
500
200
75
-
-
50
125
110
30
-
-
1550
-
-
V
%/K
V
S
µA
µA
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
pF
pF
pF
V
GS
= 10 V; I
D
= 3.25 A
V
DS
= V
GS
; I
D
= 0.25 mA
V
DS
= 30 V; I
D
= 3.25 A
V
DS
= 600 V; V
GS
= 0 V
V
DS
= 480 V; V
GS
= 0 V; T
j
= 125 ˚C
Gate-source leakage current V
GS
=
±30
V; V
DS
= 0 V
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
Input capacitance
Output capacitance
Feedback capacitance
I
D
= 6.5 A; V
DD
= 480 V; V
GS
= 10 V
V
DD
= 300 V; R
D
= 56
Ω;
R
G
= 9.1
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
January 1998
2
Rev 1.000
Philips Semiconductors
Objective specification
PowerMOS transistors
Low capacitance
Avalanche energy rated
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
T
hs
= 25˚C
T
hs
= 25˚C
I
S
= 6.5 A; V
GS
= 0 V
I
S
= 6.5 A; V
GS
= 0 V; dI/dt = 100 A/µs
MIN.
-
-
-
-
-
PHX6NA60E
TYP. MAX. UNIT
-
-
-
530
6.7
6.5
26
1.2
-
-
A
A
V
ns
µC
January 1998
3
Rev 1.000
Philips Semiconductors
Objective specification
PowerMOS transistors
Low capacitance
Avalanche energy rated
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
3.2
3.0
PHX6NA60E
4.6
max
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
19
max. max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
M
2
3
1.0 (2x)
0.6
2.54
0.5
2.5
1.3
0.9
0.7
5.08
Fig.1. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
January 1998
4
Rev 1.000
Philips Semiconductors
Objective specification
PowerMOS transistors
Low capacitance
Avalanche energy rated
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
PHX6NA60E
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
January 1998
5
Rev 1.000
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