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元器件品牌
PSMN070-200P
[PHILIPS]
N-channel TrenchMOS transistor; N沟道晶体管的TrenchMOS
元器件型号：
PSMN070-200P
生产厂家：
NXP SEMICONDUCTORS
描述和应用：
N-channel TrenchMOS transistor
N沟道晶体管的TrenchMOS
晶体 晶体管
PDF文件：
总12页 (文件大小：146K)
下载文档：
下载PDF数据表文档文件
型号参数：PSMN070-200P参数
查看货源
PSMN070-200P,127
N-channel TrenchMOS SiliconMAX standard level FET TO-220 3-Pin
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156
-
0
PHILIPS
PSMN075-100MSE
N-channel 100 V 71 m standard level MOSFET in LFPAK33 designed specifically for PoE applications
Warning
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156
-
138
PHILIPS
PSMN075-100MSEX
PSMN075-100MSE - N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications
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156
-
0
PHILIPS
PSMN085-150K
N-channel enhancement mode field-effect transistor
Warning
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on line
156
-
28
PHILIPS
PSMN085-150K
N-channel TrenchMOS SiliconMAX standard level FET
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156
-
15
PHILIPS
PSMN085-150K,518
N-channel TrenchMOS SiliconMAX standard level FET SOIC 8-Pin
Warning
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156
-
0
PHILIPS
PSMN0R7-25YLD
POWER, FET
Warning
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on line
156
-
0
PHILIPS
PSMN0R9-25YLC
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology
Warning
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156
-
86
PHILIPS
PSMN0R9-25YLC
NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)
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156
-
106
PHILIPS
PSMN0R9-25YLC,115
PSMN0R9-25YLC - N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology SOIC 4-Pin
Warning
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on line
156
-
2
PHILIPS
PSMN0R9-30YLD
TRANSISTOR POWER, FET, FET General Purpose Power
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156
-
2
PHILIPS
PSMN102-200Y
N-channel TrenchMOS standard level FET
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on line
156
-
39
PHILIPS
PSMN102-200Y
TRANSISTOR 21.5 A, 200 V, 0.102 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power
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156
-
1
PHILIPS
PSMN102-200Y,115
N-channel TrenchMOS SiliconMAX standard level FET SOIC 4-Pin
Warning
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on line
156
-
0
PHILIPS
PSMN130-200D
N-channel TrenchMOS transistor
Warning
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on line
156
-
102
PHILIPS
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