概述
规格参数
数据手册SA631DK-T 概述
RF/Microwave Mixer, BICMOS, 射频/微波混频器
SA631DK-T 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Transferred |
| Reach Compliance Code： | unknown | 风险等级： | 5.77 |
| JESD-609代码： | e0 | 安装特点： | SURFACE MOUNT |
| 端子数量： | 20 | 最高工作温度： | 85 °C |
| 最低工作温度： | -40 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装等效代码： | SSOP20,.25 | 电源： | 3 V |
| 子类别： | RF/Microwave Mixers | 表面贴装： | YES |
| 技术： | BICMOS | 端子面层： | Tin/Lead (Sn/Pb) |
| Base Number Matches： | 1 |
SA631DK-T 数据手册
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SA631
1GHz low voltage LNA and mixer
Product specification
IC17 Data Handbook
1998 Jan 08
Philips
Semiconductors
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
DESCRIPTION
PIN CONFIGURATION
The SA631 is a combined low-noise BiCMOS amplifier, and mixer
designed for high-performance low-power communication systems
from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise
figure at 881MHz with 15dB gain and an IP3 intercept of –7dBm at
the input. The gain is stabilized by on-chip compensation to vary
less than ±0.2dB over –40 to +85°C temperature range. The
wide-dynamic-range mixer has a 10dB noise figure and IP3 of
+3.3dBm at the input at 881MHz. The nominal current drawn from a
single 3V supply is 8.3mA. Additionally, the entire circuit can be
powered down to further reduce the supply current to less than
20µA.
1
20
PD1
MIXER OUT
2
3
PD2
GND
19 MIXER OUT
18
17
GND
4
LO OUT
GND
MIXER IN
5
16 GND
GND
6
LNA IN
15
14
13
12
11
GND
7
GND
GND
8
LNA OUT
GND
9
V
CC
FEATURES
GND
GND
10
• Low current consumption
SR00124
• Outstanding gain and noise figure
Figure 1. Pin Configuration
• Excellent gain stability versus temperature and supply voltage
• LNA and mixer power down capability
• Designed in Philips state of the art BiCMOS QUBIC process
APPLICATIONS
• 900MHz cellular and cordless front-end
• Spread spectrum receivers
• RF data links
• UHF frequency conversion
• Portable radio
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
–40 to +85°C
20-Pin Shrink Small Outline Package (Surface-mount, SSOP)
SA631DK
SOT266-1
BLOCK DIAGRAM
MIXER
OUT
MIXER
OUT
MIXER
IN
LNA
IN
LNA
OUT
GND
GND
V
GND
CC
GND
20
19
18
17
16
15
14
13
12
11
LNA
1
2
3
4
5
6
7
8
9
10
PD1
PD2
GND
LO
OUT
GND
GND
GND
GND
GND
GND
SR01588
Figure 2. SA631 Block Diagram
2
1998 Jan 08
853–2045 18847
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
1
V
Supply voltage
Voltage applied to any other pin
Power dissipation, T = 25°C (still air)
–0.3 to +6
V
CC
V
–0.3 to (V + 0.3)
V
IN
CC
2
amb
P
D
20-Pin Plastic SSOP
980
150
mW
°C
T
JMAX
Maximum operating junction temperature
Maximum power input/output
P
+20
dBm
°C
MAX
STG
T
Storage temperature range
–65 to +150
NOTES:
1. Transients exceeding 8V on V pin may damage product.
CC
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
θ
: 20-Pin SSOP = 110°C/W
JA
3. Pins 19 and 20 are ESD sensitive (mixer outputs).
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
RATING
2.7 to 5.5
UNITS
V
V
CC
Supply voltage
T
Operating ambient temperature range
Operating junction temperature
–40 to +85
–40 to +105
°C
amb
T
°C
J
DC ELECTRICAL CHARACTERISTICS
V
CC
= +3.0V, T
= 25°C; unless otherwise stated.
amb
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
UNITS
MIN
TYP
8.3
5.2
20
MAX
Full power-on
LNA powered-down
Full power-down
mA
mA
µA
V
I
Supply current
CC
V
T
PD logic threshold voltage
Logic 1 level
1.2
2.0
1.6
1.8
V
IH
V
CC
V
V
IL
Logic 0 level
–0.3
0.8
V
I
PD1 input current
PD2 input current
Enable = 0.4V
Enable = 2.4V
10
10
µA
µA
IL
I
IH
3
1998 Jan 08
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
AC ELECTRICAL CHARACTERISTICS
V
= +3.0V, T
= 25°C; RF = 881MHz, f
= 964MHz; unless otherwise stated.
CC
amb
IN
VCO
LIMITS
TYP
SYMBOL
PARAMETER
TEST CONDITIONS
UNITS
–3s
+3s
Low Noise Amplifier
RF input frequency range
f
RF
800
1000
MHz
dB
S
S
Amplifier gain
15
–28
0.006
±0.013
–28
–10
–10
–20
–7
21
21
Amplifier gain in power-down mode
Gain temperature sensitivity enabled
Gain frequency variation
dB
∆S /∆T
dB/°C
dB/MHz
dB
21
∆S /∆f
800MHz - 1.0GHz
@ 881 MHz
21
S
12
Amplifier reverse isolation
S
Amplifier input match
With ext. impedance matching
dB
11
22
S
Amplifier output match
dB
P
Amplifier input 1dB gain compression
Amplifier input third order intercept
Amplifier noise figure
dBm
dBm
dB
-1dB
IP3
NF
1.7
t
Amplifier turn-on time (Enable Lo → Hi)
Amplifier turn-off time (Enable Hi → Lo)
120
0.3
µs
ON
t
µs
OFF
Mixer
f
RF
= 881MHz, f = 964MHz,
LO
PG
Mixer power conversion gain: R = R = 1.2kΩ
9.6
dB
C
P
L
f
IF
= 83MHz
S
Mixer input match
Ext. impedance matching req.
–10
10
dB
11M
NF
Mixer SSB noise figure
dB
M
P
Mixer input 1dB gain compression
Mixer input third order intercept
Mixer input second order intercept
Mixer RF feedthrough
–14.5
3.3
dBm
dBm
dBm
dBm
dBm
dBm
dBm
-1dB
IP3
M
IP
38
2INT
P
RF = –32dBm
–45
–23
–32
–42
RFM-IF
IN
P
LO-IF
LO feedthrough to IF
LO = –0dBm
P
LO to mixer input feedthrough
LO to LNA input feedthrough
LO-RFM
P
LO-RF
Overall System
System gain
G
LNA + Mixer
23.9
24.6
25.3
dB
SYS
4
1998 Jan 08
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
Table 1. Power ON/OFF Control Logic
PD1
PD2
0
0
Full chip power-down
Mixer on, LNA power-down
Standby (bias on)
0
1 or open
0
1 or open
1 or open
1 or open
Full chip power-on (default)
C1
100pF
L1
560nH
IF
OUT
L6
12nH
C3
6.8pF
L4
560n
L3
6.8nH
C2
C8
10nF
V
CC
3V
+
–
10nF
10nF
C11
C16
10pF
C15
10pF
C9
0.1µF
C10
2.2pF
C13
33pF
C14
6.8pF
20
MIXER
OUT
19
MIXER
OUT
18
GND
17
MIXER
IN
16
GND
15
LNA
IN
14
GND
13
LNA
OUT
12
11
GND
V
CC
SA631
PD1
1
PD2
2
GND
3
GND
5
GND
6
GND
7
GND
8
GND
9
GND
10
LO
4
OUT
C12
100pF
VCO
OUT
SR01589
Figure 3. SA631 Application Circuit
5
1998 Jan 08
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
PERFORMANCE CHARACTERISTICS
-13.0
-27.0
-27.5
-28.0
-28.5
-29.0
-29.5
-30.0
-30.5
-31.0
-40°C
25°C
-13.5
-14.0
85°C
25°C
-14.5
-15.0
-15.5
-16.0
-40°C
85°C
2.5
3
3.5
4
4.5
5
5.5
2.5
3
3.5
4
4.5
5
5.5
V
(V)
Mixer 1dB CCoCmpression vs V
0
V
(V)
LNA Gain (DCisCabled) vs V
CC
CC
6.0
-2
-3
-40°C
5.0
4.0
-4
3.0
-5
25°C
85°C
2.0
1.0
-6
85°C
-7
25°C
0.0
-8
–1.0
–2.0
-9
-10
–3.0
–4.0
-11
-12
–40°C
2.5
3
3.5
4
4.5
5
5.5
2.5
3
3.5
4
4.5
5
5.5
V
(V)
V
(V)
LNA IPC3Cvs V
CC
Mixer IP3 vs V
CC
CC
–15
–16
–17
–18
–19
–20
–21
–22
–23
–24
–25
85°C
25°C
–40°C
2.5
3
3.5
4
4.5
5
5.5
V
(V)
CC
LNA 1dB Compression vs V
CC
SR01590
Figure 4.
6
1998 Jan 08
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
PERFORMANCE CHARACTERISTICS
–39
–40
–41
–42
–43
–44
–45
–46
–47
–48
–49
9.8
9.4
9.0
25°C
8.6
-40°C
25°C
8.2
85°C
85°C
7.8
7.4
7.0
6.6
6.2
5.8
-40°C
2.5
3
3.5
4
4.5
5
5.5
V
(V)
CC
2.5
3
3.5
4
4.5
5
5.5
LO to LNA In Feedthrough vs V
V
(V)
CC
CC
I
vs V and Temperature
CC
CC
11.0
–20
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
–21
–22
–23
–24
–25
–26
–27
–28
–29
–30
-40°C
25°C
85°C
-40°C
25°C
85°C
6.5
6.0
2.5
3
3.5
4
(V)
4.5
5
5.5
2.5
3
3.5
4
4.5
5
5.5
V
CC
V
(V)
CC
Mixer Power Gain vs V
CC
LO to IF Feedthrough vs V
CC
–28.0
–30.0
–32.0
–34.0
–36.0
–38.0
25°C
-40°C
85°C
–40.0
–42.0
2.5
3
3.5
4
4.5
5
5.5
V
(V)
CC
LO to Mixer In Feedthrough vs V
CC
SR01591
Figure 5.
7
1998 Jan 08
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
PERFORMANCE CHARACTERISTICS
–42.0
15.6
15.4
15.2
15.0
14.8
14.6
14.4
14.2
14.0
13.8
13.6
–43.0
–40°C
25°C
–44.0
25°C
–45.0
–40°C
85°C
–46.0
85°C
–47.0
–48.0
2.5
3
3.5
4
4.5
5
5.5
V
(V)
CC
2.5
3
3.5
4
4.5
5
5.5
Mixer In to IF Feedthrough vs V
CC
V
(V)
CC
LNA Gain (Enabled) vs V
CC
11.0
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
10.8
10.6
10.4
10.2
10.0
9.8
85°C
85°C
25°C
25°C
–40°C
–40°C
9.6
9.4
9.2
9.0
2.5
3
3.5
4
4.5
5
5.5
2.5
3
3.5
4
4.5
5
5.5
V
(V)
CC
V
(V)
CC
Mixer Noise Figure vs V
LNA Noise Figure vs V
CC
CC
SR01592
Figure 6.
8
1998 Jan 08
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
CH2
1 U FS
S
11
1: 40.1 Ω
-129.6 Ω
200 MHz
2: 24.0 Ω
-62.9 Ω
400 MHz
3: 18.6 Ω
-37.4 Ω
600 MHz
4: 14.1 Ω
10.5 pF
-16.7 Ω
900 MHz
3
2
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01593
Figure 7. Typical S of LNA at 3V
11
S
CH1
1 U FS
22
1: 40.5 Ω
-28.2 Ω
700 MHz
2: 36.1 Ω
-12.4 Ω
800 MHz
3: 34.7 Ω
3.5 Ω
900 MHz
4: 34.9 Ω
3.74 Ω
661.4 pH
900 MHz
3
START
700. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01253
Figure 8. Typical S of LNA at 3V
22
9
1998 Jan 08
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
CH1
10 U FS
S
21
1: 6.7 U
142.5 °
200 MHz
3
2
2: 5.9 U
112.3 °
1
400 MHz
4
3: 5.9 U
78.1 °
600 MHz
4: 4.5 U
21.2°
900 MHz
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01254
Figure 9. Typical S of LNA at 3V
21
CH2
50 mU FS
S
12
1: 1.9 mU
83.0 °
200 MHz
2: 1.6 mU
133.5 °
400 MHz
3: 11.4 mU
141.5 °
600 MHz
1
2
4: 27.9 mU
106.1°
900 MHz
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01255
Figure 10. Typical S of LNA at 3V
12
10
1998 Jan 08
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
CH1
1 U FS
S
11
1: 122.8 Ω
-144.9 Ω
200 MHz
2: 58.0 Ω
-86.8 Ω
400 MHz
3: 45.9 Ω
-62.3 Ω
600 MHz
4: 26.6 Ω
-43.2 Ω
4.085 pF
900 MHz
3
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01256
Figure 11. Typical S11 of Mixer at 3V
11
1998 Jan 08
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
Table 2. Typical S-Parameters of LNA at 3V
LNA
|S
(U)
|
|S
|
|S
(U)
|
|S
(U)
|
<S
22
(deg)
11
21
12
22
Freq (MHz)
<S (deg)
11
<S (deg)
21
<S (deg)
12
(U)
7.4
7.1
7.0
6.9
6.8
6.7
6.6
6.5
6.4
6.3
6.3
6.2
6.1
6.0
5.9
5.9
6.0
6.1
6.1
6.1
6.1
6.1
6.0
5.9
5.8
5.7
5.7
5.6
5.5
5.5
5.3
5.3
5.1
5.0
4.9
4.8
4.6
4.5
4.3
4.2
4.0
3.8
3.6
3.5
3.3
3.2
3.0
2.8
2.7
2.5
2.4
100
122
144
166
188
210
232
254
276
298
320
342
364
386
408
430
452
474
496
518
540
562
584
606
628
650
672
694
716
738
760
782
804
826
848
870
892
914
936
958
980
1002
1024
1046
1068
1090
1112
1134
1156
1178
1200
0.86
0.86
0.85
0.83
0.82
0.81
0.80
0.79
0.78
0.76
0.75
0.73
0.71
0.70
0.69
0.68
0.69
0.68
0.67
0.66
0.65
0.63
0.62
0.62
0.61
0.61
0.60
0.60
0.59
0.59
0.59
0.59
0.59
0.59
0.59
0.59
0.59
0.59
0.59
0.59
0.59
0.59
0.59
0.59
0.59
0.59
0.59
0.58
0.58
0.57
0.57
–20
–24
160
156
151
148
144
140
136
133
130
126
123
119
116
113
111
109
106
102
97
0.001
0.001
0.001
0.000
0.002
0.002
0.002
0.001
0.001
0.002
0.002
0.002
0.002
0.001
0.001
0.004
0.006
0.007
0.008
0.010
0.009
0.010
0.011
0.011
0.013
0.013
0.016
0.016
0.017
0.019
0.021
0.021
0.022
0.024
0.026
0.027
0.028
0.028
0.028
0.030
0.031
0.031
0.032
0.032
0.033
0.033
0.031
0.030
0.031
0.031
0.029
91.91
62
0.59
0.58
0.58
0.57
0.57
0.56
0.55
0.54
0.53
0.52
0.51
0.50
0.48
0.47
0.46
0.45
0.46
0.47
0.47
0.46
0.45
0.43
0.42
0.40
0.38
0.36
0.34
0.31
0.29
0.27
0.24
0.22
0.21
0.19
0.18
0.17
0.18
0.19
0.20
0.22
0.24
0.26
0.28
0.30
0.33
0.35
0.36
0.38
0.39
0.41
0.42
–9.62
–11.71
–13.86
–15.89
–17.80
–20.05
–22.37
–24.60
–26.89
–28.72
–30.98
–32.79
–34.68
–36.06
–36.64
–37.21
–38.41
–41.54
–45.75
–50.35
–54.73
–59.16
–63.93
–68.56
–73.48
–78.19
–83.75
–89.81
–96.92
–104.48
–112.81
–122.41
–132.81
–145.39
–159.13
–175.11
169.02
154.96
141.94
130.27
119.5
–28
105.42
91.65
–32
–36
100.23
73.57
–41
–45
99.70
–48
84.00
–52
103.18
94.33
–56
–59
66.98
–63
108.53
118.13
103.4
–66
–69
–72
175.94
174.1
–76
–78
162.02
160.07
153.6
–82
–85
–89
93
146.17
142.13
138.49
146.17
140.55
137.2
–92
89
–96
85
–99
81
–102
–104
–107
–109
–112
–115
–118
–121
–124
–126
–129
–132
–135
–138
–142
–144
–148
–151
–153
–157
–160
–164
–167
–170
–172
–175
–178
178
77
72
69
130.62
129.77
131.94
128.67
127.53
123.42
122.31
119.52
118.29
115.98
111.9
65
61
57
53
48
44
40
36
31
26
22
108.11
105.92
106.13
99.79
18
14
9
4
99.30
0
94.81
110.61
102.16
94.98
–2
90.91
–6
85.65
–10
–14
–18
–22
–25
–28
–31
86.10
88.45
80.59
82.47
79.18
77.17
46.32
71.98
78.57
67.45
73.66
62.73
71.78
58.87
12
1998 Jan 08
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
Table 3. Typical S-Parameters of Mixer at 3V
Mixer
Mixer
|S
(U)
|S
11
|
|
11
Freq (MHz)
<S (deg)
11
Freq (MHz)
<S (deg)
11
(U)
100
122
144
166
188
210
232
254
276
298
320
342
364
386
408
430
452
474
496
518
540
562
584
606
628
650
0.73
0.73
0.72
0.72
0.72
0.71
0.70
0.70
0.69
0.68
0.67
0.66
0.64
0.63
0.62
0.61
0.59
0.58
0.57
0.56
0.55
0.55
0.54
0.54
0.54
0.54
–11
–147
–16
–19
–21
–24
–27
–29
–32
–34
–37
–39
–42
–44
–46
–48
–50
–52
–53
–54
–56
–57
–59
–61
–62
–64
672
694
0.54
0.54
0.54
0.54
0.54
0.55
0.55
0.55
0.55
0.55
0.56
0.55
0.56
0.56
0.56
0.56
0.57
0.57
0.57
0.57
0.57
0.57
0.57
0.57
0.57
–65
–67
716
–69
738
–71
760
–73
782
–76
804
–78
826
–80
848
–82
870
–85
892
–87
914
–90
936
–93
958
–96
980
–98
1002
1024
1046
1068
1090
1112
1134
1156
1178
1200
–101
–104
–106
–110
–112
–115
–118
–121
–124
–127
13
1998 Jan 08
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
14
1998 Jan 08
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
NOTES
15
1998 Jan 08
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
Data sheet status
[1]
Data sheet
status
Product
status
Definition
Objective
specification
Development
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
Preliminary
specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
Product
specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Copyright Philips Electronics North America Corporation 1998
All rights reserved. Printed in U.S.A.
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Date of release: 01-98
Document order number:
9397 750 03414
Philips
Semiconductors
SA631DK-T 相关器件
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| SA636 | NXP | Low voltage high performance mixer FM IF system with high-speed RSSI | 获取价格 |
|
| SA636BS | NXP | SPECIALTY TELECOM CIRCUIT, PQCC20, 4 X 4 MM, 0.85 MM HEIGHT, PLASTIC, MO-220, SOT917-1, HVQFN-20 | 获取价格 |
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| SA636BS,115 | NXP | SA636 - Low voltage high performance mixer FM IF system with high-speed RSSI QFN 20-Pin | 获取价格 |
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| SA636DK | NXP | Low voltage high performance mixer FM IF system with high-speed RSSI | 获取价格 |
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| SA636DK-T | PHILIPS | RF/Microwave Mixer, BIPolar | 获取价格 |
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| SA636DK-T | NXP | IC SPECIALTY TELECOM CIRCUIT, PDSO20, 4.40 MM, PLASTIC, MO-152, SOT266-1, SSOP-20, Telecom IC:Other | 获取价格 |
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| SA636DK/01,112 | NXP | SA636 - Low voltage high performance mixer FM IF system with high-speed RSSI SSOP2 20-Pin | 获取价格 |
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| SA636DK/02J | NXP | Telecom Circuit | 获取价格 |
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| SA636DK01 | NXP | Low voltage high performance mixer FM IF system with high-speed RSSI | 获取价格 |
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| SA636DK02 | NXP | Low voltage high performance mixer FM IF system with high-speed RSSI | 获取价格 |
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