TZA3043BU/G [NXP]
IC SPECIALTY TELECOM CIRCUIT, UUC13, 1.03 X 1.30 MM, DIE-13, Telecom IC:Other;
| 型号： | TZA3043BU/G |
| 厂家： | 
NXP |
| 描述： | IC SPECIALTY TELECOM CIRCUIT, UUC13, 1.03 X 1.30 MM, DIE-13, Telecom IC:Other 光纤 放大器 以太网 |
| 文件： | 总28页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TZA3043; TZA3043B
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
Product specification
2000 Mar 28
Supersedes data of 1998 Jul 08
File under Integrated Circuits, IC19
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
FEATURES
APPLICATIONS
• Wide dynamic range, typically 2.5 µA to 1.5 mA
• Low equivalent input noise, typically 5.7 pA/√Hz
• Differential transimpedance of 8.3 kΩ
• Wide bandwidth from DC to 950 MHz
• Differential outputs
• Digital fibre optic receiver in medium and long haul
optical telecommunications transmission systems or in
high speed data networks
• Wideband RF gain block.
GENERAL DESCRIPTION
• On-chip Automatic Gain Control (AGC)
• No external components required
The TZA3043 is a high speed transimpedance amplifier
with AGC designed to be used in Gigabit Ethernet/Fibre
Channel optical links. It amplifies the current generated by
a photo detector (PIN diode or avalanche photodiode) and
converts it to a differential output voltage.
• Single supply voltage from 3.0 to 5.5 V
• Bias voltage for PIN diode
• Pin compatible with TZA3023 and SA5223
• Switched output polarity available (B-version).
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TZA3043T
TZA3043U
TZA3043BT
TZA3043BU
SO8
−
plastic small outline package; 8 leads; body width 3.9 mm
bare die in waffle pack carriers; die dimensions 1.030 × 1.300 mm
plastic small outline package; 8 leads; body width 3.9 mm
bare die in waffle pack carriers; die dimensions 1.030 × 1.300 mm
SOT96-1
−
SOT96-1
−
SO8
−
2000 Mar 28
2
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
BLOCK DIAGRAM
(1)
AGC
V
CC
(13)
8 (11, 12)
V
CC
1 nF
125 Ω
GAIN
CONTROL
125 Ω
1 (1)
DREF
peak detector
A2
10 pF
IPhoto 3 (4)
(10) 7 OUTQ
(9) 6 OUT
A1
low noise
amplifier
single-ended to
differential converter
TZA3043T
TZA3043U
BIASING
2, 4, 5 (2, 3, 5, 6, 7, 8)
MGU096
GND
The numbers in brackets refer to the pad numbers of the bare die version.
(1) AGC analog I/O (pad 13) is only available on the TZA3043U.
Fig.1 Block diagram of TZA3043T and TZA3043U.
(1)
AGC
V
CC
(13)
8 (11, 12)
V
CC
1 nF
DREF
125 Ω
GAIN
CONTROL
125 Ω
1 (1)
peak detector
A2
10 pF
IPhoto 3 (4)
(9) 6
OUTQ
A1
(10) 7 OUT
low noise
amplifier
single-ended to
differential converter
TZA3043BT
TZA3043BU
BIASING
2, 4, 5 (2, 3, 5, 6, 7, 8)
MGU097
GND
The numbers in brackets refer to the pad numbers of the bare die version.
(1) AGC analog I/O (pad 13) is only available on the TZA3043BU.
Fig.2 Block diagram of TZA3043BT and TZA3043BU.
3
2000 Mar 28
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
PINNING
PIN
PIN
PAD
PAD
SYMBOL
TYPE
DESCRIPTION
TZA3043T TZA3043BT TZA3043U TZA3043BU
DREF
1
1
1
1
analog bias voltage for PIN diode; cathode
output should be connected to this pin
GND
2
3
2
3
2, 3
4
2, 3
4
ground ground
IPhoto
analog current input; anode of PIN diode
input
should be connected to this pin;
DC bias level of 822 mV is one diode
voltage above ground
GND
GND
OUT
4
5
6
4
5
7
5, 6
7, 8
9
5, 6
7, 8
10
ground ground
ground ground
data
data output; pin OUT goes HIGH
output
when current flows into pin IPhoto
OUTQ
7
6
10
9
data
compliment of pin OUT
output
VCC
8
8
11, 12
13
11, 12
13
supply
supply voltage
AGC
−
−
input/
AGC analog I/O
output
handbook, halfpage
handbook, halfpage
V
V
DREF
GND
DREF
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
CC
CC
OUTQ
OUT
GND
IPhoto
GND
OUT
TZA3043T
TZA3043BT
OUTQ
GND
IPhoto
GND
GND
MGR287
MGU098
Fig.3 Pin configuration of TZA3043T.
Fig.4 Pin configuration of TZA3043BT.
2000 Mar 28
4
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
FUNCTIONAL DESCRIPTION
The AGC loop hold capacitor is integrated on-chip, so an
external capacitor is not needed for AGC.
The TZA3043 is a transimpedance amplifier intended for
use in fibre optic links for signal recovery in Fibre Channel
or Gigabit Ethernet applications. It amplifies the current
generated by a photo detector (PIN diode or avalanche
photodiode) and transforms it into a differential output
voltage. The most important characteristics of the
TZA3043 are high receiver sensitivity and wide dynamic
range. High receiver sensitivity is achieved by minimizing
noise in the transimpedance amplifier.
AGC monitoring
The AGC voltage can be monitored at pad 13 on the bare
die (TZA3043U/TZA3043BU). Pad 13 is not bonded in the
packaged device (TZA3043T/TZA3043BT). This pad can
be left unconnected during normal operation. It can also be
used to force an external AGC voltage. If pad 13 (AGC) is
connected to GND, the internal AGC loop is disabled and
the receiver gain is at a maximum. The maximum input
current is then approximately 75 µA.
Input circuit
The signal current generated by a PIN diode can vary
between 2.5 µA to 1.5 mA (p-p).
Output circuit
A differential amplifier converts the output of the
preamplifier to a differential voltage (see Fig.5).
An AGC loop is implemented to make it possible to handle
such a wide dynamic range. The AGC loop increases the
dynamic range of the receiver by reducing the feedback
resistance of the preamplifier.
The logic level symbol definitions for the differential
outputs are shown in Fig.6.
V
CC
800 Ω
800 Ω
30 Ω
OUTQ
30 Ω
OUT
4.5 mA
2 mA
4.5 mA
MGR290
Fig.5 Differential data output circuit.
V
V
CC
V
O(max)
V
OQH
V
OH
o(p-p)
V
OQL
V
OO
V
OL
V
O(min)
MGR243
Fig.6 Logic level symbol definitions for data outputs OUT and OUTQ.
5
2000 Mar 28
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
PIN diode bias voltage DREF
The reverse voltage across the PIN diode is 4.18 V
(5 − 0.82 V) for 5 V supply or 2.48 V (3.3 − 0.82 V) for
3.3 V supply.
The transimpedance amplifier together with the PIN diode
determines the performance of an optical receiver for a
large extent. Especially how the PIN diode is connected to
the input and the layout around the input pin influence the
key parameters like sensitivity, the bandwidth and the
Power Supply Rejection Ratio (PSRR) of a
transimpedance amplifier. The total capacitance at the
input pin is critical to obtain the highest sensitivity. It should
be kept to a minimum by reducing the capacitance of the
PIN diode and the parasitics around the input pin. The
PIN diode should be placed very close to the IC to reduce
the parasitics. Because the capacitance of the PIN diode
depends on the reverse voltage across it, the reverse
voltage should be chosen as high as possible.
It is preferable to connect the cathode of the PIN diode to
a higher voltage then VCC when such a voltage source is
available on the board. In this case pin DREF can be left
unconnected. When a negative supply voltage is available,
the configuration in Fig.8 can be used. It should be noted
that in this case the direction of the signal current is
reversed compared to the Fig.7. Proper filtering of the bias
voltage for the PIN diode is essential to achieve the
highest sensitivity level.
The PIN diode can be connected to the input in two ways
as shown in Figs 7 and 8. In Fig.7 the PIN diode is
connected between pins DREF and IPhoto. Pin DREF
provides an easy bias voltage for the PIN diode. The
voltage at DREF is derived from VCC by a low-pass filter.
The low-pass filter consisting of the internal resistors
R1, R2, C1 and the external capacitor C2 rejects the
supply voltage noise. The external capacitor C2 should be
equal or larger then 1 nF for a high PSRR.
V
V
CC
CC
8
8
R2
R1
R2
R1
125 Ω
125 Ω
125 Ω
125 Ω
DREF 1
1
3
DREF
IPhoto
C2
1 nF
C1
10 pF
C1
10 pF
I
i
3
IPhoto
I
i
TZA3043
TZA3043
MGU103
MGU104
negative supply voltage
Fig.8 The PIN diode connected between the input
and a negative supply voltage.
Fig.7 The PIN diode connected between the input
and pin DREF.
2000 Mar 28
6
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
AGC
It is disabled for smaller signals. The transimpedance is
then at its maximum value (8.3 kΩ differential).
The TZA3043 transimpedance amplifier can handle input
currents from 1 µA to 1.5 mA. This means a dynamic
range of 63 dB. At low input currents, the transimpedance
must be high to get enough output voltage, and the noise
should be low enough to guaranty minimum bit error rate.
At high input currents however, the transimpedance
should be low to avoid pulse width distortion. This means
that the gain of the amplifier has to vary depending on the
input signal level to handle such a wide dynamic range.
This is achieved in the TZA3043 by implementing an
Automatic Gain Control (AGC) loop. The AGC loop
consists of a peak detector, a hold capacitor and a gain
control circuit.
When AGC is active, the feedback resistor of the
transimpedance amplifier is reduced to keep the output
voltage constant. The transimpedance is regulated from
8.3 kΩ at low currents (I < 30 µA) to 1 kΩ at high currents
(I < 500 µA). Above 500 µA the transimpedance is at its
minimum and can not be reduced further but the front-end
remains linear until input currents of 1.5 mA.
The upper part of Fig.9 shows the output voltages of the
TZA3043 (OUT and OUTQ) as a function of the DC input
current. In the lower part, the difference of both voltages is
shown. It can be seen from the figure that the output
changes linearly up to 25 µA input current where AGC
becomes active. From this point on, AGC tries to keep the
differential output voltage constant around 200 mV for
medium range input currents (input currents <200 µA).
The AGC can not regulate any more above 500 µA input
current and the output voltage rises again with the input
current.
The peak amplitude of the signal is detected by the peak
detector and it is stored on the hold capacitor. The voltage
over the hold capacitor is compared to a threshold level.
The threshold level is set to 25 µA (p-p) input current. AGC
becomes active only for input signals larger than the
threshold level.
MGU105
3.9
V
o
(V)
3.7
V
OUT
3.5
3.3
V
= 5 V
CC
V
OUTQ
3.1
600
V
o(dif)
(1)
(mV)
400
(2)
(3)
200
0
2
3
4
1
10
10
10
10
I (µA)
i
Vo(dif) = VOUT − VOUTQ
(1) VCC = 3 V.
.
(2) VCC = 3.3 V.
(3) VCC = 5 V.
Fig.9 AGC characteristics.
7
2000 Mar 28
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
−0.5
MAX.
+6
UNIT
VCC
Vn
supply voltage
DC voltage
V
pin/pad IPhoto
−0.5
−0.5
−0.5
−0.5
+1
V
V
V
V
pins/pads OUT and OUTQ
pad AGC (bare die only)
pin/pad DREF
V
CC + 0.5
CC + 0.5
V
VCC + 0.5
In
DC current
pin/pad IPhoto
−2.5
−15
−0.2
−2.5
−
+2.5
+15
+0.2
+2.5
300
mA
mA
mA
mA
mW
°C
pins/pads OUT and OUTQ
pad AGC (bare die only)
pin/pad DREF
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
ambient temperature
−65
−
+150
150
°C
Tamb
−40
+85
°C
HANDLING
Precautions should be taken to avoid damage through electrostatic discharge. This is particularly important during
assembly and handling of the bare die. Additional safety can be obtained by bonding the VCC and GND pads first, the
remaining pads may then be bonded to their external connections in any order.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
160
K/W
2000 Mar 28
8
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
CHARACTERISTICS
Typical values at Tamb = 25 °C and VCC = 5 V; minimum and maximum values are valid over the entire ambient
temperature range and supply range; all voltages are measured with respect to ground; unless otherwise specified.
SYMBOL
PARAMETER
supply voltage
CONDITIONS
MIN.
TYP.
MAX.
5.5
UNIT
VCC
ICC
3
−
−
−
5
V
supply current
AC coupled; RL = 50 Ω
34
47
mA
mW
mW
°C
Ptot
total power dissipation
VCC = 5 V
170
112
−
259
169
+125
+85
V
CC = 3.3 V
Tj
junction temperature
ambient temperature
−40
−40
Tamb
Rtr
+25
°C
small-signal transresistance of measured differentially;
the receiver
AC coupled
RL = ∞
13.2
6.6
16.6
8.3
20
10
−
kΩ
RL = 50 Ω
kΩ
f−3dB(h)
PSRR
high frequency −3 dB point
VCC = 5 V; Ci = 0.7 pF
1000
850
1200
1100
MHz
MHz
V
CC = 3.3 V; Ci = 0.7 pF
−
power supply rejection ratio
measured differentially;
note 1
f = 1 to 100 MHz
f = 1 GHz
−
−
2
−
−
µA/V
µA/V
66
Bias voltage: pin DREF
RDREF resistance between DREF and tested at DC
VCC
210
250
290
Ω
Input: pin IPhoto
Vbias(IPhoto) input bias voltage on
pin IPhoto
600
822
1000
mV
Ii(IPhoto)(p-p) input current on pin IPhoto
(peak-to-peak value)
VCC = 5 V; note 2
−1500
−1000
−
+6
+6
28
+1500
+1000
−
µA
µA
Ω
VCC = 3.3 V; note 2
Ri
small-signal input resistance
fi = 1 MHz; input current
<2 µA (p-p)
In(tot)
total integrated RMS noise
current over bandwidth
referenced to input;
∆f = 920 MHz; note 3
−
200
−
nA
2000 Mar 28
9
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Data outputs: pins OUT and OUTQ
Vo(cm)
common mode output voltage AC coupled; RL = 50 Ω
V
CC − 2
VCC − 1.7 VCC − 1.4 V
Vo(se)(p-p)
single-ended output voltage
(peak-to-peak value)
AC coupled; RL = 50 Ω;
input current 100 µA (p-p)
75
200
330
mV
VOO
differential output offset
voltage
−100
−
+100
mV
Ro
output resistance
rise time, fall time
single-ended; DC tested
40
50
62
Ω
tr, tf
VCC = 5 V; 20% to 80%;
−
285
430
ps
input current <20 µA (p-p)
VCC = 3.3 V; 20% to 80%;
input current <20 µA (p-p)
−
−
300
25
460
ps
Automatic gain control loop: pad AGC
Ith(AGC)
AGC threshold current
referenced to the peak
input current; tested at
10 MHz
−
µA
tatt(AGC)
AGC attack time
AGC decay time
−
−
5
−
−
µs
tdecay(AGC)
10
ms
Notes
1. PSRR is defined as the ratio of the equivalent current change at the input (∆IIPhoto) to a change in supply voltage:
∆IIPhoto
PSRR =
--------------------
∆VCC
For example, a +10 mV disturbance on VCC at 10 MHz will typically add an extra 20 nA to the photodiode current.
The external capacitor between pins DREF and GND has a large impact on the PSRR. The specification is valid with
an external capacitor of 1 nF.
2. The pulse width distortion (PWD) is <5% over the whole input current range. The PWD is defined as:
pulse width
PWD =
– 1 × 100% where T is the clock period. The PWD is measured differentially with
-----------------------------
T
PRBS pattern of 10−23
.
3. All In(tot) measurements were made with an input capacitance of Ci = 1 pF. This was comprised of 0.5 pF for the
photodiode itself, with 0.3 pF allowed for the printed-circuit board layout and 0.2 pF intrinsic to the package. Noise
performance is measured differentially.
2000 Mar 28
10
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
TYPICAL PERFORMANCE CHARACTERISTICS
MGU112
MGU113
40
CC
(mA)
38
34.8
handbook, halfpage
handbook, halfpage
I
I
CC
(mA)
34.4
36
34.0
(1)
(2)
(3)
34
33.6
33.2
32
30
28
−40
32.8
3
0
40
80
120
4
5
6
T (°C)
V
(V)
j
CC
(1) VCC = 5 V.
(2) VCC = 3.3 V.
(3) VCC = 3 V.
Fig.10 Supply current as a function of the junction
temperature.
Fig.11 Supply current as a function of the supply
voltage.
MGU114
MGU115
825
920
handbook, halfpage
handbook, halfpage
V
i
(mV)
V
i
(mV)
823
840
(1)
(3)
(2)
821
819
817
760
680
3
4
5
6
−40
0
40
80
120
V
(V)
T (°C)
CC
j
(1) VCC = 5 V.
(2) VCC = 3.3 V.
(3) VCC = 3 V.
Fig.12 Input voltage as a function of the supply
voltage.
Fig.13 Input voltage as a function of the junction
temperature.
2000 Mar 28
11
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
MGU116
MGU117
1.68
1.85
handbook, halfpage
handbook, halfpage
V
o(cm)
(V)
V
o(cm)
(V)
1.675
(1)
1.75
(1)
(2)
1.67
1.665
1.65
(2)
1.66
1.655
1.55
3
4
5
6
−40
0
40
80
120
V
(V)
T (°C)
j
CC
VCC = 5 V.
(1)
(2)
V
CC − VOUT.
(1)
(2)
V
CC − VOUT
.
VCC − VOUTQ
.
VCC − VOUTQ
.
Fig.14 Common mode voltage at the output as a
function of the supply voltage.
Fig.15 Common mode voltage at the output as a
function of the junction temperature.
2000 Mar 28
12
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
APPLICATION AND TEST INFORMATION
10 µH
V
P
22 nF
680 nF
V
CC
8
DREF
IPhoto
1
3
Z
Z
= 50 Ω
= 50 Ω
o
o
100 nF
100 nF
(1)
OUTQ
7
TZA3043T
(1)
OUT
6
R3
50 Ω
R4
50 Ω
1 nF
2
4
5
GND
GND
GND
MGU101
(1) For TZA3043BT pin 7 is OUT and pin 6 is OUTQ.
Fig.16 Application diagram.
2000 Mar 28
13
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...
g
V
CC
680 nF
(1)
(1)
(1)
22 nF
100 nF
100 nF
180 kΩ
V
RSET
CF
V
V
CCD
V
CC
ref
CCA
8
16
7
15
14
6
DREF
IPhoto
1.5 nF
(2)
OUTQ
DIN
DOUT
1
4
7
6
13
100
data out
TZA3043T
4 pF
TZA3044
Ω
1 nF
1.5 nF
(2)
OUT
DINQ
DOUTQ
5
12
3
2
noise filter:
1-pole, 800 MHz
1
AGND SUB JAM
4
5
3
8
9
10
STQ ST
11
DGND
GND GND GND
level-detect
status
1 kΩ
50 Ω
50 Ω
V
− 2 V
CC
MGU102
(1) Ferrite bead e.g. Murata BLM10A700S.
(2) For TZA3043BT pin 7 is OUT and pin 6 is OUTQ.
Fig.17 Gigabit Ethernet/Fibre Channel receiver using the TZA3043T and TZA3044.
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
Test circuits
Z
= s .(R + Z ) . 2
21
R = 470 Ω, Z = 28 Ω
i
T
i
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT 1
PORT 2
Z
= 50 Ω
Z
= 50 Ω
o
o
V
CC
23
2
-1 PRBS
100 nF
100 nF
SAMPLING
OSCILLOSCOPE/
TDR/TDT
OUT
PATTERN
GENERATOR
10 nF
470 Ω
IPhoto
1
2
TR
OUTQ
C
C
D
D
TR
C IN
51 Ω
TZA3043
OM5803
Z
= 50 Ω
o
MGU106
Fig.18 Electrical test circuit.
2000 Mar 28
15
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
LIGHTWAVE MULTIMETER
−9.54 dBm
OPTICAL
INPUT
ERROR DETECTOR
Data Clock
OPTICAL ATTENUATOR
0 dBm/1300
in
in
IN
OUT
V
CC
90% 10%
BLM
22 nF
23
2
-1 PRBS
100 nF
DREF
IPhoto
SAMPLING
OSCILLOSCOPE/
TDR/TDT
PATTERN
GENERATOR
OUT
LASER DRIVER
DIN
TR
OUTQ
C
C
D
D
TR
C IN
1
2
PIN
10 nF
TZA3043 100 nF
DINQ
Laser
TZA3041
OM5802
OM5804
Z
= 50 Ω
o
1.24416 GHz
MGU107
Fig.19 Optical test circuit.
2000 Mar 28
16
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
MGU108
Fig.20 Differential output with −25 dBm optical input power [input current of 5.17 µA (p-p)].
MGU109
Fig.21 Differential output with −15 dBm optical input power [input current of 51.7 µA (p-p)].
2000 Mar 28
17
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
MGU110
Fig.22 Differential output with −5 dBm optical input power [input current of 517 µA (p-p)].
MGU111
Fig.23 Differential output with −2 dBm optical input power [input current of 1030 µA (p-p)].
2000 Mar 28
18
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
BONDING PAD LOCATIONS
COORDINATES(1)
y
SYMBOL
PAD TZA3043U
PAD TZA3043BU
x
DREF
GND
GND
1
2
1
2
95
95
881
618
473
285
95
3
3
95
IPhoto
GND
GND
GND
GND
OUT
OUTQ
VCC
4
4
95
5
5
215
360
549
691
785
785
567
424
259
6
6
95
7
7
95
8
8
95
9
10
9
501
641
1055
1055
1055
10
11
12
13
11
12
13
VCC
AGC
Note
1. All coordinates are referenced, in µm, to the bottom left-hand corner of the die.
11
11
13
12
13
12
1
1
DREF
DREF
10
9
10
9
OUTQ
OUT
OUT
1300
µm
1300
µm
TZA3043U
TZA3043BU
GND
GND
2
3
GND
GND
2
3
OUTQ
4
4
IPhoto
IPhoto
5
6
7
8
5
6
7
8
x
x
0
0
0
0
y
y
1030
µm
1030
µm
MGU099
MGU100
Fig.24 Bonding pad locations of the TZA3043U.
Fig.25 Bonding pad locations of the TZA3043BU.
2000 Mar 28
19
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
Physical characteristics of the bare die
PARAMETER
VALUE
Glass passivation
Bonding pad dimension
Metallization
Thickness
2.1 µm PSG (PhosphoSilicate Glass) on top of 0.65 µm oxynitride
minimum dimension of exposed metallization is 90 × 90 µm (pad size = 100 × 100 µm)
1.22 µm W/AlCu/TiW
380 µm nominal
Size
1.03 × 1.30 mm (1.34 mm2)
Backing
silicon; electrically connected to GND potential through substrate contacts
Attach temperature
Attach time
<440 °C; recommended die attach is glue
<15 s
2000 Mar 28
20
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-05-22
99-12-27
SOT96-1
076E03
MS-012
2000 Mar 28
21
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
SOLDERING
If wave soldering is used the following conditions must be
observed for optimal results:
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
Manual soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
2000 Mar 28
22
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
WAVE
REFLOW(1)
not suitable suitable
PACKAGE
BGA, LFBGA, SQFP, TFBGA
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS
PLCC(3), SO, SOJ
not suitable(2)
suitable
suitable
suitable
LQFP, QFP, TQFP
not recommended(3)(4) suitable
not recommended(5)
suitable
SSOP, TSSOP, VSO
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2000 Mar 28
23
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
BARE DIE DISCLAIMER
All die are tested and are guaranteed to comply with all
data sheet limits up to the point of wafer sawing for a
period of ninety (90) days from the date of Philips' delivery.
If there are data sheet limits not guaranteed, these will be
separately indicated in the data sheet. There are no post
packing tests performed on individual die or wafer. Philips
Semiconductors has no control of third party procedures in
the sawing, handling, packing or assembly of the die.
Accordingly, Philips Semiconductors assumes no liability
for device functionality or performance of the die or
systems after third party sawing, handling, packing or
assembly of the die. It is the responsibility of the customer
to test and qualify their application in which the die is used.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
2000 Mar 28
24
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
NOTES
2000 Mar 28
25
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
NOTES
2000 Mar 28
26
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
NOTES
2000 Mar 28
27
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Pakistan: see Singapore
Belgium: see The Netherlands
Brazil: see South America
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Colombia: see South America
Czech Republic: see Austria
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: see Austria
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Middle East: see Italy
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
69
SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403510/200/02/pp28
Date of release: 2000 Mar 28
Document order number: 9397 750 06817
相关型号：
©2020 ICPDF网 联系我们和版权申明