1N5406G [PINGWEI]
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER; 硅整流技术规范型号: | 1N5406G |
厂家: | Chongqing Pingwei Enterprise co.,Ltd |
描述: | TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER |
文件: | 总1页 (文件大小:40K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1N5400G THRU 1N5408G
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE:50-1000V
CURRENT:3.0A
FEATURES
·High reliability
DO-27
·Low leakage
·Low forward voltage drop
·High current capability
1.0(25.4)
MIN.
.052(1.3)
.048(1.2)
DIA.
.375(9.5)
.335(8.5)
.220(5.6)
.187(5.0)
DIA.
MECHANICAL DATA
1.0(25.4)
MIN.
·Case: Molded plastic
·Epoxy: UL94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color band denotes cathode end
·Mounting position: Any
Dimensions in inches and (millimeters)
·Weight: 1.18 grams
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
1N5400 1N5401 1N540 1N5404 1N5406 1N540 1N5408
SYMBOL
units
G
G
2G
G
G
7G
800 1000
560 700
800 1000
G
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
100
Maximum DC Blocking Voltage
Maximum Average Forward rectified Current
.375”(9.5mm) lead length at TL=75°C
Io
3.0
150
1.1
A
A
V
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
IFSM
Maximum Instantaneous forward Voltage at 3.0A
DC
VF
5.0
@ TA=25°C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
500
@ TA=100°C
IR
µA
Maximum Full Load Reverse Current Average,
Full Cycle .375”(9.5mm) lead length at TL=75°C
30
CJ
40
30
pF
Typical Junction Capacitance (Note)
Typical Thermal Resistance
RθJA
°C/W
Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts
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