8N60H [PINGWEI]
8A mps,600 Volts N-CHANNEL MOSFET;
| 型号： | 8N60H |
| 厂家： | 
Chongqing Pingwei Enterprise co.,Ltd |
| 描述： | 8A mps,600 Volts N-CHANNEL MOSFET |
| 文件： | 总2页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
8N60(F,B,H)
8A mps,600 Volts N-CHANNEL MOSFET
FEATURE
8A,600V,RDS(ON)=1.0Ω@VGS=10V/4A
Low gate charge
Low Ciss
Fast switching
TO-220AB
8N60
ITO-220AB
8N60F
100% avalanche tested
Improved dv/dt capability
TO-263
8N60B
TO-262
8N60H
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
8N60
UNIT
Drain-Source Voltage
VDSS
VGSS
ID
600
V
Gate-Source Voltage
±30
Continuous Drain Current
8
A
Pulsed Drain Current(Note1)
IDM
32
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
EAS
550
mJ
A
IAR
8
21
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
EAR
mJ
V/ns
℃
dv/dt
TJ,TSTG
5.5
-55 to +150
TL
260
℃
10
lbf·in
N·m
Mounting Torque
6-32 or M3 screw
1.1
Thermal Characteristics
TO-262
TO-263
Units
ITO-220
TO-220
Parameter
Symbol
Maximum Junction-to-Case
Maximum Power Dissipation
RthJC
PD
1.0
0.8
0.8
℃/W
TC=25℃
125
155
155
W
- 页码 -
Rev. 14-1
http:// www.perfectway.cn
Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Mix
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Temperature Coefficient
BVDSS
ΔBVDSS
/ΔTJ
VGS=0V,ID=250uA
600
－
－
－
V
Reference to 25℃，
ID=250uA
－
0.6
V/℃
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
On Characteristics
IDSS
VDS=600V,VGS=0V
VGS=30V,VDS=0V
VGS=-30V,VDS=0V
－
－
－
－
－
－
1
uA
uA
uA
IGSSF
10
-10
IGSSR
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Dynamic Characteristics
Input Capacitance
VGS(th)
RDS(on)
VDS=10V,ID=250uA
VGS=10V,ID=4A
2
－
－
4
1
V
－
Ω
Ciss
Coss
Crss
VDS=25V,VGS=0V,
f=1.0MHZ
－
－
－
－
－
－
1500
180
15
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
VDD=300V,ID=8A,
－
－
－
－
－
－
－
13
10
26
8
－
－
－
－
－
－
－
ns
ns
RG=25Ω
(Note4,5)
ns
ns
Qg
Qgs
Qgd
VDS=480V,ID=8A,
40
9
nC
nC
nC
VGS=10V, (Note4,5)
20
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
Pulsed Diode Forward Current
Diode Forward Voltage
IS
ISM
VSD
trr
－
－
－
－
－
－
－
8
A
A
32
1.5
－
－
IS=8A,VGS=0V
－
V
Reverse Recovery Time
VGS=0V,IS=8A,
570
4.3
ns
uC
dIF/dt=100A/us, (Note4)
Reverse Recovery Charge
Qrr
Notes
1.
2.
3.
4.
5.
Repetitive Rating:pulse width limited by maximum junction temperature.
VDD=50V,starling,L=16mH,Rg=25Ω,IAS=8A , TJ=25℃.
SD≤ID,dI/dt=_A/us,VDD≤BVDSS,starting TJ=25℃.
I
Pulse width≤300us;duty cycle≤2%.
Repetitive rating; pulse width limited by maximum junction temperature.
- 页码 -
Rev. 14-1
http:// www.perfectway.cn
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