GBP406 [PINGWEI]
SINGLE PHASE4.0AMPS.GLASS PASSIVATED BRIDGE RECTIFIERS;型号: | GBP406 |
厂家: | Chongqing Pingwei Enterprise co.,Ltd |
描述: | SINGLE PHASE4.0AMPS.GLASS PASSIVATED BRIDGE RECTIFIERS 二极管 |
文件: | 总2页 (文件大小:201K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
GBP4005 THRU GBP410
SINGLE PHASE4.0AMPS.GLASS PASSIVATED BRIDGE RECTIFIERS
GBP
FEATURE
.UL Listed Under Recognized Component Index,
File Number E338195
.580(14.75)
.561(14.25)
.110(2.8)
45°
Chamfer
.134(3.4)
.126(3.2)
.Glass passivated chip junctions
.High case dielectric stength
.425(10.8)
.394(10.0)
.Low Reverse Leakage Current
.High surge current capability
.043(1.1)
.035(0.9)
.024(0.6)
.016(0.4)
.057(1.45)
.046(1.17)
.Ideal for Printed Circuit Board Applications
.276(7.0)
.236(6.0)
.106(2.7)
.091(2.3)
MECHANICAL DATA
.034(0.86)
.026(0.67)
.Case: GBP
.Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
.Terminals: Pure tin plated, Lead free.
Leads solderable per MIL-STD-750, Method 2026.
.Polarity: Marked on body
.160(4.1)
.140(3.5)
SPACING
.Weight: 1.5 grams
Dimensions in inches and (millimeters)
.Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
SYM
GBP GBP GBP GBP GBP GBP GBP
Type Number
units
BOL
VRRM
VRMS
VDC
4005
50
401
100
70
402
200
140
200
404
400
280
400
4.0
406
600
420
600
408
800
560
800
410
1000
700
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
35
Maximum DC blocking Voltage
50
100
1000
Maximum Average Forward (with heatsink Note2)
Rectified Current @ TC=100°C(without heatsink)
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
A
IF(AV)
2.0
120
A
IFSM
Maximum Forward Voltage
Drop per element
@ 4.0A DC
@ 2.0A DC
@TJ =25°C
@TJ =125°C
1.1
1.0
V
VF
IR
Maximum DC Reverse Current
at rated DC blocking voltage
I2t Rating for Fusing (t﹤8.3ms)
5.0
μA
500.0
59.7
A2Sec
pF
2
I t
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Storage Temperature
40
CJ
R(JC)
TSTG
TJ
3.0
°C/W
°C
-55 to +150
-55 to +150
Operating Junction Temperature
Note:
°C
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2.Device mounted on 75mm x 75mm x 1.6mm Cu Plate Heatsink.
- 53 -
RATING AND CHARACTERISTIC CURVES (GBP4005 THRU GBP410)
FIG.1-TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.2-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
4.0
2.0
0
With Heatsink
1.0
TJ=25℃
Pulse Width=300μs
1% Duty Cycle
Without Heatsink
0.1
Single Phase Half Wave 60Hz
Resistive or inductive Load
.01
150
125
1.2
75
0.8
100
25
.4
0.6
1.0
0
50
INSTANEOUS FORWARD VOLTAGE,(V)
CASE TEMPERTURE,(℃)
FIG.3-MAXIMUN NON-REPETITIVE
FORWARD SURGE CURRENT
FIG.4-TYPIAL JUNCTION CAPAOTANCE
1000
100
120
90
8.3ms Single Half
Sine-Wave (JEDEC
Method)
60
10
1
30
0
100
100
1
10
10
1
REVERSE VOLTAGE,(V)
NUMBER OF CYCLES AT 60Hz
FIG.5-TYPICAL REVERSE CHARACTERISTICS
1000
100
10
T=150℃
J
TJ=125℃
TJ=100℃
1.0
TJ=25℃
0.1
80
0
20
40
60
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
- 54 -
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