KBU8A-RS801 [PINGWEI]

SINGLE-PHASE SILICON BRIDGE RECTIFIER; 单相硅桥式整流器
KBU8A-RS801
型号: KBU8A-RS801
厂家: Chongqing Pingwei Enterprise co.,Ltd    Chongqing Pingwei Enterprise co.,Ltd
描述:

SINGLE-PHASE SILICON BRIDGE RECTIFIER
单相硅桥式整流器

文件: 总1页 (文件大小:41K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CHONGQING PINGYANG ELECTRONICS CO.,LTD.  
KBU8A/RS801 THRU KBU8M/RS807  
SINGLE-PHASE SILICON BRIDGE RECTIFIER  
VOLTAGE50-1000V  
CURRENT8.0A  
FEATURES  
·Low leakage  
·Low forward voltage  
KBU  
.935(23.7)  
.895(22.7)  
.300  
(7.5)  
·Surge overload ratings-250 Amperes  
·Molded structure  
.780(19.8)  
.740(18.8)  
.700(17.8)  
.600(16.8)  
-
AC  
+
.052(1.3) DIA.  
.048(1.2) TYP.  
1.00  
(25.4) MIN.  
MECHANICAL DATA  
.220(5.6)  
.180(4.6)  
·Case: Molded plastic  
SPACING  
.280(7.0)  
.268(6.8)  
.140  
(5.3)  
·Epoxy: UL 94V-0 rate flame retardant  
·Lead: MIL-STD- 202E, Method 208 guaranteed  
·Polarity: Symbols molded or marked on body  
·Mounting position: Any  
Dimensions in inches and (millimeters)  
·Weight: 8.0 grams  
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS  
Ratings at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
RS801 RS802 RS803 RS804 RS805 RS806 RS807  
units  
SYMBOL  
KBU8A KBU8B KBU8D KBU8G KBU8J KBU8K KBU8M  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800 1000  
560 700  
800 1000  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Bridge Input Voltage  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward rectified Output  
Current at TC=75°C  
Io  
8.0  
A
Peak Forward Surge Current 8.3ms single half  
sine-wave superimposed on rate load (JEDEC  
method)  
IFSM  
VF  
IR  
250  
A
V
Maximum Forward Voltage Drop per element at  
4.0A DC  
1.0  
10  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@ TA=25°C  
µA  
500  
127  
186  
10  
@ TA=100°C  
per element  
I2t  
CJ  
A2Sec  
pF  
I2t Rating for Fusing (t<8.3ms)  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
RθJA  
°C/W  
Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts  
2.Thermal Resistance from Junction to Ambientwith units mounted on 0.47×0.47(12×12mm) copper pads  
PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn  

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