MBR10150LCT [PINGWEI]
High current capability;
| 型号： | MBR10150LCT |
| 厂家： | 
Chongqing Pingwei Enterprise co.,Ltd |
| 描述： | High current capability |
| 文件： | 总1页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1045L(F,B,H)CT thru MBR10200L(F,B,H)CT
10A Schottky Barrier Rectifier
FEATURE
High current capability
Low forward voltage drop
Low power loss, high efficiency
High surge capability
High ESD capability
TO-220AB
ITO-220AB
High temperature soldering guaranteed:
260°C/10s/0.25"(6.35mm) from case
MBR10XXLCT
MBR10XXLFCT
MECHANICAL DATA
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Mounting position: any
TO-263
TO-262
TYPICALAPPLICATIONS
MBR10XXLBCT
MBR10XXLHCT
For use in low voltage, high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters and
polarity protection application.
Ratings at 25°C ambient temperature unless otherwise specified, Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS
MBR1045 MBR1060 MBR10100 MBR10150 MBR10200
Parameter
Symbol
units
LCT
LCT
LCT
LCT
LCT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
45
32
60
42
100
70
150
105
200
140
V
V
V
Maximum DC Blocking Voltage
total device
per diode
10.0
5.0
Maximum Average Forward Rectified
IF(AV)
IFSM
A
A
Current at TC=90°C
Peak Forward Surge Current 8.3ms Single Half sine-wave
superimposed on rate load per diode (JEDEC method)
Junction Capacitance (Note1)
120
CJ
TSTG
TJ
700
300
pF
°C
°C
Storage Temperature Range
-55 to +150
-55 to +150
Operation Temperature Range
ELECTRONICAL CHARACTERISTICS
MBR10100 MBR10150 MBR10200
MBR1045 MBR1060
Parameter
Symbol
units
LCT
LCT
LCT
LCT
LCT
Maximum Forward Voltage Drop per diode at 5A (Note 2)
VF
IR
0.55
0.65
0.80
0.85
0.1
0.90
V
@ TC =25°C
@ TC=100°C
0.15
40.0
Maximum DC Reverse Current at rated
DC blocking voltage (Note 2)
mA
20.0
THERMAL CHARACTERISTICS
TO-262
TO-263
ITO-220
TO-220
units
Parameter
Symbol
Typical Thermal Resistance (Note 3)
Rth (JC)
3.5
2.5
2.5
°C/W
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc.
2. Pulse test: 300 μs pulse width, 1% duty cycle.
3. Thermal Resistance from Junction to Case Mounted on heatsink.
- 页码 -
Rev. 14-1
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