MBR20150LCT [PINGWEI]
20A Schottky Barrier Rectifier;
| 型号： | MBR20150LCT |
| 厂家： | 
Chongqing Pingwei Enterprise co.,Ltd |
| 描述： | 20A Schottky Barrier Rectifier |
| 文件： | 总1页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR2045L(F,B,H)CT thru MBR20200L(F,B,H)CT
20A Schottky Barrier Rectifier
FEATURE
High current capability
Low forward voltage drop
Low power loss, high efficiency
High surge capability
High ESD capability
TO-220AB
ITO-220AB
High temperature soldering guaranteed:
260°C/10s/0.25"(6.35mm) from case
MBR20XXLCT
MBR20XXLFCT
MECHANICAL DATA
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Mounting position: any
TO-263
TO-262
TYPICALAPPLICATIONS
MBR20XXLBCT
MBR20XXLHCT
For use in low voltage, high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters and
polarity protection application.
Ratings at 25°C ambient temperature unless otherwise specified, Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS
MBR2045
LCT
MBR2060
LCT
MBR20100
LCT
MBR20150
LCT
Parameter
Symbol
units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
45
32
45
60
42
60
100
70
150
105
150
V
V
V
Maximum DC Blocking Voltage
100
total device
per diode
20.0
10.0
Maximum Average Forward Rectified
IF(AV)
IFSM
A
A
Current at TC=90°C
Peak Forward Surge Current 8.3ms Single Half sine-wave
superimposed on rate load per diode (JEDEC method)
Junction Capacitance (Note1)
175
CJ
TSTG
TJ
800
350
pF
°C
°C
Storage Temperature Range
-55 to +150
-55 to +150
Operation Temperature Range
ELECTRONICAL CHARACTERISTICS
MBR2045
LCT
MBR2060
MBR20100
LCT
MBR20150
LCT
Parameter
Symbol
units
LCT
Maximum Forward Voltage Drop per diode at 10A (Note 2)
VF
IR
0.55
0.65
0.80
0.85
V
@ TC =25°C
@ TC=100°C
0.15
40.0
0.1
Maximum DC Reverse Current at rated
DC blocking voltage (Note 2)
mA
20.0
THERMAL CHARACTERISTICS
TO-262
TO-263
ITO-220
TO-220
2.5
units
Parameter
Symbol
Typical Thermal Resistance (Note 3)
Rth (JC)
3.5
2.5
°C/W
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc.
2. Pulse test: 300 μs pulse width, 1% duty cycle.
3. Thermal Resistance from Junction to Case Mounted on heatsink.
- 页码 -
Rev. 14-1
http:// www.perfectway.cn
相关型号：
MBR20150WT
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, Silicon, TO-247AD, PLASTIC PACKAGE-3
SENSITRON
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