RB151 [PINGWEI]
SINGLE-PHASE SILICON BRIDGE RECTIFIER; 单相硅桥式整流器
| 型号： | RB151 |
| 厂家： | 
Chongqing Pingwei Enterprise co.,Ltd |
| 描述： | SINGLE-PHASE SILICON BRIDGE RECTIFIER |
| 文件： | 总1页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHONGQING PINGYANG ELECTRONICS CO.,LTD.
RB151 THRU RB157
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE：50-1000V
CURRENT：1.5A
FEATURES
·Surge overload ratings-50 Amperes
RB-15
.150(3.8) .360(9.1)
.130(3.3) .340(8.6)
·Good for printed circuit board assembly
.220(5.6)
.180(4.6)
1.0
1.2
25.4 MIN.
.220(5.6)
.180(4.6)
(30.5) MIN.
MECHANICAL DATA
·Case: Plastic shell with plastic encapsulation
·Epoxy: UL 94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity: As marked
.032(0.8)
.028(0.7)
·Mounting position: Any
·Weight: 1.04 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
RB151 RB152RB153 RB154 RB155RB156 RB157 units
SYMBOL
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800 1000
560 700
800 1000
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
100
Maximum Average Forward rectified Output
Current at TA=25°C
Io
IFSM
VF
IR
1.5
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
50
A
Maximum Forward Voltage Drop per element at
1.0A DC
1.0
10
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ TA=25°C
µA
500
10
@ TA=100°C
per element
I2t
CJ
A2S
pF
I2t Rating for Fusing (t﹤8.3ms)
25
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
RθJA
40
°C/W
Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts
2.Thermal Resistance from Junction to lead mounted on P.C.B with 0.5×0.5”(13×13mm) copper pads
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