RC1008 [PINGWEI]
SINGLE-PHASE SILICON BRIDGE RECTIFIER; 单相硅桥式整流器![RC1008](http://pdffile.icpdf.com/pdf1/p00159/img/icpdf/RC100_884086_icpdf.jpg)
型号: | RC1008 |
厂家: | ![]() |
描述: | SINGLE-PHASE SILICON BRIDGE RECTIFIER |
文件: | 总1页 (文件大小:40K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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CHONGQING PINGYANG ELECTRONICS CO.,LTD.
RC10005 THRU RC1010
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE:50-1000V
CURRENT:10.0A
FEATURES
·Surge overload ratings-300 Amperes
·Good for printed circuit board assembly
C-2
.224(5.7)
.216(5.5)
MECHANICAL DATA
·Case: Silicon rubber passivated
·Epoxy: UL 94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity: As marked
.086(2.20)
.078(2.0)
·Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
RC10005RC1001RC1002RC1004RC1006RC1008RC1010 units
SYMBOL
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800 1000
560 700
800 1000
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
100
Maximum Average Forward rectified Output
Current at TA=50°C
Io
10.0
300
1.0
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
IFSM
VF
IR
A
V
Maximum Forward Voltage Drop per element at
10.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
5.0
@ TA=25°C
µA
500
@ TA=100°C
per element
I2t
CJ
10
25
40
A2S
pF
I2t Rating for Fusing (t﹤8.3ms)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
RθJA
°C/W
Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts
2.Thermal Resistance from Junction to lead mounted on P.C.B with 0.47×0.47”(12×12mm) copper pads
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