S1G [PINGWEI]

SURFACE MOUNT SILICON RECTIFIER; 表面安装硅整流


型号：	S1G
厂家：	Chongqing Pingwei Enterprise co.,Ltd
描述：	SURFACE MOUNT SILICON RECTIFIER 表面安装硅整流
文件：	总1页 (文件大小：42K)
中文：	中文翻译
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CHONGQING PINGYANG ELECTRONICS CO.,LTD.

S1A THRU S1M

SURFACE MOUNT SILICON RECTIFIER

VOLTAGE：50-1000V

CURRENT：1.0A

FEATURES

·Ideal for surface mounted applications

·Low leakage current

SMB(DO-214AA)

·Glass passivated junction

.083(2.11)

.075(1.91)

.155(3.94)

.130(3.30)

.185(4.70)

.160(4.06)

.012(0.305)

.006(0.152)

.096(2.44)

.084(2.13)

MECHANICAL DATA

·Case: Molded plastic

.060((1.52)

.030(0.76)

·Epoxy: UL94V-0 rate flame retardant

·Terminals: Solder plated,solderable per

MIL-STD- 750, Method 2026

·Polarity: As marked

.008(0.203)

.002(0.051)

.220(5.59)

.200(5.08)

·Mounting position: Any

·Weight: 0.093 grams

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL S1A

S1B

100

S1D S1G

S1J

600

S1K S1M units

Maximum Recurrent Peak Reverse Voltage

V_RRM

200

400

800 1000

560 700

800 1000

Maximum RMS Voltage

V_RMS

V_DC

100

140

200

280

400

420

600

Maximum DC Blocking Voltage

Maximum Average Forward rectified Current

at T_A=75°C

I_o

1.0

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method)

I_FSM

Maximum forward Voltage at 1.0A DC

V_F

I_R

1.1

5.0

@ T_A=25°C

Maximum DC Reverse Current

at Rated DC Blocking Voltage

µA

@ T_A=125°C

100

Typical Thermal Resistance (Note2)

R_θJL

C_J

°C/W

Typical Junction Capacitance (Note1)

Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts

2.Thermal Resistance (Junction to Ambient), .0.2×0.2in²(5×5mm²) copper pads to each terminal

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