SF51G_16 [PINGWEI]

5.0AMPS.GLASS PASSIVATED SUPER FAST RECTIFIERS;
SF51G_16
型号: SF51G_16
厂家: Chongqing Pingwei Enterprise co.,Ltd    Chongqing Pingwei Enterprise co.,Ltd
描述:

5.0AMPS.GLASS PASSIVATED SUPER FAST RECTIFIERS

文件: 总1页 (文件大小:85K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SF51G THRU SF58G  
5.0AMPS.GLASS PASSIVATED SUPER FAST RECTIFIERS  
DO-27/DO-201AD  
FEATURE  
.High current capability  
.Low forward voltage drop  
0.96(24.4)  
MIN.  
.Low power loss, high efficiency  
.High surge capability  
.220(5.6)  
.187(5.0)  
DIA.  
.High temperature soldering guaranteed  
260°C /10sec/ 0.375" lead length at 5 lbs tension  
.Super fast recovery time for high efficiency.  
+
.375(9.5)  
.335(8.5)  
-
MECHANICAL DATA  
.Terminal: Plated axial leads solderable per  
MIL-STD 202E, method 208C  
0.96(24.4)  
MIN.  
.051(1.3)  
.043(1.1)  
DIA.  
.Case: Molded with UL-94 Class V-0 recognized  
Flame Retardant Epoxy  
.Polarity: color band denotes cathode  
.Mounting position: any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%  
Type Number  
SYMBOL SF51G SF52G SF53G SF54G SF55G SF56G SF57G SF58G units  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
600  
420  
600  
V
V
V
100  
Maximum DC blocking Voltage  
Maximum Average Forward Rectified Current  
.375"(9.5mm) lead length at TA =55°C  
Peak Forward Surge Current 8.3ms single half  
sine-wave superimposed on rated load (JEDEC  
method)  
IF(AV)  
3.0  
A
IFSM  
150.0  
A
Maximum Instantaneous forward Voltage at  
5.0A DC  
VF  
IR  
0.95  
1.3  
1.7  
V
Maximum DC Reverse Current  
at rated DC blocking voltage  
@TA =25°C  
5.0  
100.0  
35  
µA  
@TA =125°C  
Maximum Reverse Recovery Time (Note 1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Storage Temperature  
trr  
CJ  
ns  
pF  
120  
90  
R(JA)  
TSTG  
TJ  
50  
°C/W  
°C  
-55 to +150  
-55 to +150  
°C  
Operation Junction Temperature  
Note:  
1. Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc  
3. Thermal Resistance from Junction to Ambient at 0.375"9.5mmlead length, vertical P.C. Board Mounted.  

相关型号:

SF51H31-1

Rectifier Diode, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
RECTRON

SF51H32-1

Rectifier Diode, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
RECTRON

SF51H33

Rectifier Diode, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
RECTRON

SF51H34

Rectifier Diode, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
RECTRON

SF51H36

Rectifier Diode, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
RECTRON

SF51H36-1

Rectifier Diode, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
RECTRON

SF51H36-2

Rectifier Diode, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
RECTRON

SF51H36-4

Rectifier Diode, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
RECTRON

SF51M21

Rectifier Diode, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
RECTRON

SF51M22

Rectifier Diode, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
RECTRON

SF51M23

Rectifier Diode, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
RECTRON

SF51M24

Rectifier Diode, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
RECTRON