BD546C [POINN]
PNP SILICON POWER TRANSISTORS; PNP硅功率晶体管
| 型号： | BD546C |
| 厂家： | 
POWER INNOVATIONS LTD |
| 描述： | PNP SILICON POWER TRANSISTORS |
| 文件： | 总6页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
JUNE 1973 - REVISED MARCH 1997
●
Designed for Complementary Use with the
BD545 Series
SOT-93 PACKAGE
(TOP VIEW)
●
●
●
85 W at 25°C Case Temperature
B
C
E
1
2
3
15 A Continuous Collector Current
Customer-Specified Selections Available
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
BD546
-40
-60
BD546A
BD546B
BD546C
BD546
Collector-base voltage (IE = 0)
VCBO
V
-80
-100
-40
BD546A
BD546B
BD546C
-60
Collector-emitter voltage (IB = 0) (see Note 1)
VCEO
V
-80
-100
Emitter-base voltage
VEBO
IC
-5
V
Continuous collector current
-15
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Ptot
Ptot
TA
85
W
W
°C
°C
°C
°C
3.5
-65 to +150
-65 to +150
-65 to +150
260
Operating junction temperature range
Tj
Storage temperature range
Tstg
TL
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
P R O D U C T
I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BD546
-40
-60
Collector-emitter
BD546A
BD546B
BD546C
BD546
V(BR)CEO
IC
=
-30 mA
IB = 0
V
breakdown voltage
-80
(see Note 4)
-100
VCE
VCE
VCE
=
=
=
-40 V
-60 V
-80 V
V
BE = 0
-0.4
-0.4
-0.4
-0.4
-0.7
-0.7
Collector-emitter
cut-off current
VBE = 0
VBE = 0
VBE = 0
BD546A
BD546B
BD546C
BD546/546A
BD546B/546C
ICES
mA
VCE = -100 V
Collector cut-off
current
VCE
VCE
=
=
-30 V
-60 V
IB = 0
ICEO
IEBO
mA
mA
IB = 0
Emitter cut-off
current
VEB
=
-5 V
IC = 0
-1
VCE
VCE
VCE
=
=
=
-4 V
-4 V
-4 V
IC
IC
=
=
-1 A
-5 A
60
25
10
Forward current
transfer ratio
hFE
(see Notes 4 and 5)
IC = -10 A
IC -5 A
Collector-emitter
saturation voltage
Base-emitter
IB = -625 mA
=
-0.8
-1
VCE(sat)
VBE
(see Notes 4 and 5)
(see Notes 4 and 5)
f = 1 kHz
V
V
IB
=
-2 A
IC = -10 A
VCE
VCE
VCE
=
=
=
-4 V
IC = -10 A
-1.8
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
hfe
-10 V
-10 V
IC = -0.5 A
IC = -0.5 A
20
3
|hfe|
f = 1 MHz
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
MIN
TYP
MAX
UNIT
RqJC
RqJA
1.47
35.7
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
†
PARAMETER
TEST CONDITIONS
B(on) = -0.6 A
RL = 5 W
TYP
MAX
UNIT
ton
toff
Turn-on time
Turn-off time
IC = -6 A
I
IB(off) = 0.6 A
0.4
0.7
µs
µs
VBE(off) = 4 V
tp = 20 µs, dc £ 2%
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
P R O D U C T
I N F O R M A T I O N
2
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
BASE CURRENT
TCS634AJ
TCS634AB
1000
100
10
-10
VCE = -4 V
IC = -1 A
IC = -3 A
IC = -6 A
IC = -10 A
TC = 25°C
tp = 300 µs, duty cycle < 2%
-1·0
-0·1
1
-0·1
-0·01
-1·0
-10
-0·01
-0·1
-1·0
-10
IC - Collector Current - A
IB - Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS634AC
-1·6
VCE = -4 V
TC = 25 °C
-1·4
-1·2
-1·0
-0·8
-0·6
-0·1
-1·0
-10
IC - Collector Current - A
Figure 3.
P R O D U C T
I N F O R M A T I O N
3
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS634AE
-100
-10
-1·0
-0·1
-0·01
BD546
BD546A
BD546B
BD546C
-1·0
-10
-100
-1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS633AC
100
80
60
40
20
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
P R O D U C T
I N F O R M A T I O N
4
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
1,37
1,17
15,2
14,7
4,1
4,0
ø
3,95
4,15
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
2
3
1,30
1,10
0,78
0,50
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXAW
NOTE A: The centre pin is in electrical contact with the mounting tab.
P R O D U C T
I N F O R M A T I O N
5
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
P R O D U C T
I N F O R M A T I O N
6
相关型号：
BD54FA1FP3
BD54FA1FP3是可提供0.1A输出电流的稳压器。输出电压为5.4V、输出精度为±1%。封装组件采用散热性优良的SOT89-3K。作为防止IC破坏的保护功能，内置了防止因输出短路等发生IC破坏的过电流保护电路、以及防止因过负荷状态等使IC发生热破坏的温度保护电路。本产品可用于数字家电等广泛用途。采用了陶瓷电容器，有助于整机的小型化和长寿化。
ROHM
©2020 ICPDF网 联系我们和版权申明