BD899A [POINN]
NPN SILICON POWER DARLINGTONS; NPN硅功率DARLINGTONS
| 型号： | BD899A |
| 厂家： | 
POWER INNOVATIONS LTD |
| 描述： | NPN SILICON POWER DARLINGTONS |
| 文件： | 总6页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BD895A, BD897A, BD899A
NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1993 - REVISED MARCH 1997
●
Designed for Complementary Use with
BD896A, BD898A and BD900A
TO-220 PACKAGE
(TOP VIEW)
●
●
●
70 W at 25°C Case Temperature
8 A Continuous Collector Current
1
2
3
B
C
E
Minimum h of 750 at 3V, 3A
FE
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
BD895A
BD897A
BD899A
BD895A
BD897A
BD899A
45
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
VCBO
60
V
80
45
VCEO
60
V
80
Emitter-base voltage
VEBO
IC
5
V
A
Continuous collector current
Continuous base current
8
0.3
IB
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating free-air temperature range
Ptot
Ptot
TA
70
W
W
°C
°C
°C
2
-65 to +150
-65 to +150
-65 to +150
Operating junction temperature range
Tj
Storage temperature range
Tstg
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
P R O D U C T
I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD895A, BD897A, BD899A
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BD895A
BD897A
BD899A
BD895A
BD897A
BD899A
BD895A
BD897A
BD899A
BD895A
BD897A
BD899A
45
60
80
Collector-emitter
V(BR)CEO
IC = 100 mA
IB = 0
B = 0
(see Note 3)
V
breakdown voltage
VCE
VCE
VCE
VCB
VCB
VCB
VCB
VCB
VCB
=
=
=
=
=
=
=
=
=
30 V
30 V
40 V
45 V
60 V
80 V
45 V
60 V
80 V
I
0.5
0.5
0.5
0.2
0.2
0.2
2
Collector-emitter
cut-off current
ICEO
IB = 0
IB = 0
mA
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
Collector cut-off
current
ICBO
mA
mA
T
C = 100°C
TC = 100°C
TC = 100°C
2
2
Emitter cut-off
current
IEBO
hFE
VEB
VCE
IB
VCE
IE
=
=
5 V
3 V
IC = 0
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
2
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
IC = 4 A
IC = 4 A
IC = 4 A
IB = 0
750
VCE(sat)
VBE(on)
VEC
=
16 mA
3 V
2.8
2.5
3.5
V
V
V
=
Parallel diode
forward voltage
=
8 A
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
MIN
TYP
MAX
UNIT
RqJC
RqJA
1.79
62.5
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
†
PARAMETER
TEST CONDITIONS
B(on) = 12 mA
RL = 10 W
TYP
MAX
UNIT
ton
toff
Turn-on time
Turn-off time
IC = 3 A
I
IB(off) = -12 mA
1
5
µs
µs
VBE(off) = -3.5 V
tp = 20 ms, dc £ 2%
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
P R O D U C T
I N F O R M A T I O N
2
BD895A, BD897A, BD899A
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
COLLECTOR CURRENT
TCS130AB
TCS130AD
50000
10000
2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
TC = -40°C
TC = 25°C
TC = 100°C
1·5
1·0
1000
TC = -40°C
TC = 25°C
VCE
=
3 V
tp = 300 µs, duty cycle < 2%
TC = 100°C
100
0·5
0·5
0·5
1·0
10
1·0
10
IC - Collector Current - A
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS130AC
3·0
2·5
2·0
1·5
1·0
0·5
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
1·0
10
IC - Collector Current - A
Figure 3.
P R O D U C T
I N F O R M A T I O N
3
BD895A, BD897A, BD899A
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS130AE
10
1·0
0·1
BD895A
BD897A
BD899A
0.01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AB
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
P R O D U C T
I N F O R M A T I O N
4
BD895A, BD897A, BD899A
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
10,4
10,0
1,32
1,23
3,96
3,71
ø
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
14,1
12,7
1,70
1,07
0,97
0,61
1
2
3
2,74
2,34
0,64
0,41
2,90
2,40
5,28
4,88
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
P R O D U C T
I N F O R M A T I O N
5
BD895A, BD897A, BD899A
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
P R O D U C T
I N F O R M A T I O N
6
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