TIC266S [POINN]
SILICON TRIACS; 硅双向可控硅
| 型号： | TIC266S |
| 厂家： | 
POWER INNOVATIONS LTD |
| 描述： | SILICON TRIACS |
| 文件： | 总5页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIC266 SERIES
SILICON TRIACS
Copyright © 1997, Power Innovations Limited, UK
JULY 1991 - REVISED MARCH 1997
●
●
●
●
●
●
High Current Triacs
25 A RMS
TO-220 PACKAGE
(TOP VIEW)
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
175 A Peak Current
MT1
MT2
G
1
2
3
Max I of 50 mA (Quadrants 1 - 3)
GT
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
TIC266D
TIC266M
TIC266S
TIC266N
400
600
Repetitive peak off-state voltage (see Note 1)
VDRM
V
700
800
Full-cycle RMS on-state current at (or below) 50°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak gate current
IT(RMS)
ITSM
IGM
25
A
A
175
±1
A
Operating case temperature range
TC
-40 to +110
-40 to +125
230
°C
°C
°C
Storage temperature range
Tstg
TL
Lead temperature 1.6 mm from case for 10 seconds
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 50°C derate linearly to 110°C case temperature at
the rate of 625 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
electrical characteristics at 25°C case temperature (unless otherwise noted)
MIN
TYP
MAX
PARAMETER
TEST CONDITIONS
UNIT
Repetitive peak
off-state current
IDRM
VD = Rated VDRM
supply = +12 V†
IG = 0
TC = 110°C
±2
mA
V
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
IG = 50 mA
tp(g) > 20 ms
7
50
-50
-50
Peak gate trigger
current
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
tp(g) > 20 ms
-15
-16
28
IGTM
mA
V
tp(g) > 20 ms
tp(g) > 20 ms
Vsupply = +12 V†
tp(g) > 20 ms
0.7
-0.7
-0.8
0.8
±1.5
6
2
-2
Peak gate trigger
voltage
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
tp(g) > 20 ms
VGTM
tp(g) > 20 ms
-2
tp(g) > 20 ms
2
VTM
Peak on-state voltage ITM = ±35.2 A
supply = +12 V†
Vsupply = -12 V†
† All voltages are with respect to Main Terminal 1.
(see Note 4)
Init’ ITM = 100 mA
Init’ ITM = -100 mA
±1.7
40
-40
V
V
IG = 0
IH
Holding current
mA
IG = 0
-13
NOTE 4: This parameter must be measured using pulse techniques, tp = £ 1 ms, duty cycle £ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
P R O D U C T
I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIC266 SERIES
SILICON TRIACS
JULY 1991 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
MIN
TYP
MAX
PARAMETER
TEST CONDITIONS
UNIT
V
supply = +12 V†
20
IL
Latching current
(see Note 5)
mA
Vsupply = -12 V†
-20
Critical rate of rise of
off-state voltage
dv/dt
dv/dt(c)
di/dt
VD = Rated VD
IG = 0
TC = 110°C
C = 80°C
±450
±1
V/µs
V/µs
A/µs
Critical rise of
VD = Rated VD
T
commutation voltage
Critical rate of rise of
on -state current
di/dt = 0.5 IT(RMS)/ms
VD = Rated VD
IT = 1.4 IT(RMS)
IGT = 50 mA
TC = 110°C
±200
diG/dt = 50 mA/ms
† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 W, tp(g) = 20 ms, tr = £ 15 ns, f = 1 kHz.
thermal characteristics
PARAMETER
Junction to case thermal resistance
MIN
TYP
MAX
1.52
62.5
UNIT
°C/W
°C/W
RqJC
RqJA
Junction to free air thermal resistance
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
CASE TEMPERATURE
TC10AA
TC10AB
1000
100
10
0·1
ALL QUADRANTS
0·01
Vsupply IGTM
1
VAA = ± 12 V
RL = 10 W
VAA = ± 12 V
+
+
-
+
-
-
RL = 10 W
tp(g) = 20 µs
tp(g) = 20 µs
-
+
0·1
0·001
-60 -40 -20
0
20
40
60
80 100 120
-60 -40 -20
0
20
40
60
80 100 120
TC - Case Temperature - °C
TC - Case Temperature - °C
Figure 1.
Figure 2.
P R O D U C T
I N F O R M A T I O N
2
TIC266 SERIES
SILICON TRIACS
JULY 1991 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
GATE FORWARD VOLTAGE
vs
HOLDING CURRENT
vs
GATE FORWARD CURRENT
CASE TEMPERATURE
TC10AC
TC10AD
10
100
10
1
MAX
TYP
MIN
1
0·1
Vsupply
VAA = ± 12 V
IG = 0
IA = 0
+
-
TC = 25 °C
Initiating ITM = 100 mA
QUADRANT 1
0·01
0·01
0·001
0·1
0·1
1
10
-60 -40 -20
0
20
40 60 80 100 120
IGF - Gate Forward Current - A
TC - Case Temperature - °C
Figure 3.
Figure 4.
LATCHING CURRENT
vs
CASE TEMPERATURE
TC10AE
1000
100
10
Vsupply IGTM
+
+
-
+
-
-
VAA = ± 12 V
-
+
1
-60 -40 -20
0
20
40
60
80 100 120
TC - Case Temperature - °C
Figure 5.
P R O D U C T
I N F O R M A T I O N
3
TIC266 SERIES
SILICON TRIACS
JULY 1991 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
10,4
10,0
1,32
1,23
3,96
3,71
ø
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
14,1
12,7
1,70
1,07
0,97
0,61
1
2
3
2,74
2,34
0,64
0,41
2,90
2,40
5,28
4,88
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
P R O D U C T
I N F O R M A T I O N
4
TIC266 SERIES
SILICON TRIACS
JULY 1991 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
P R O D U C T
I N F O R M A T I O N
5
相关型号：
TICC107MR-S
Silicon Controlled Rectifier, 1A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, ROHS COMPLIANT, 4 PIN
BOURNS
©2020 ICPDF网 联系我们和版权申明