TIP105 [POINN]

PNP SILICON POWER DARLINGTONS; PNP硅功率DARLINGTONS


型号：	TIP105
厂家：	POWER INNOVATIONS LTD
描述：	PNP SILICON POWER DARLINGTONS PNP硅功率DARLINGTONS
文件：	总6页 (文件大小：156K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TIP105, TIP106, TIP107

PNP SILICON POWER DARLINGTONS

AUGUST 1978 - REVISED MARCH 1997

●

Designed for Complementary Use with

TIP100, TIP101 and TIP102

TO-220 PACKAGE

(TOP VIEW)

●

80 W at 25°C Case Temperature

8 A Continuous Collector Current

Maximum V

of 2.5 V at I = 8 A

CE(sat)

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

TIP105

TIP106

TIP107

TIP105

TIP106

TIP107

-60

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

V_CBO

-80

-100

-60

V_CEO

-80

-100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

-5

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

-8

-15

-1

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

°C

½LI_C

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

260

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p£ 0.3 ms, duty cycle £ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= -5 mA, R_BE= 100 W,

V_BE(off)= 0, R_S= 0.1 W, V_CC= -20 V.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

TIP105, TIP106, TIP107

PNP SILICON POWER DARLINGTONS

AUGUST 1978 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

TIP105

TIP106

TIP107

TIP105

TIP106

TIP107

TIP105

TIP106

TIP107

-60

-80

Collector-emitter

V_(BR)CEO

I_C

-30 mA

I_B= 0

_B= 0

breakdown voltage

(see Note 5)

-100

V_CE

V_CB

-30 V

-40 V

-50 V

-60 V

-80 V

-50

Collector-emitter

cut-off current

I_CEO

I_B= 0

µA

_E= 0

Collector cut-off

current

I_CBO

I_E= 0

µA

V_CB= -100 V

Emitter cut-off

current

I_EBO

h_FE

V_CE(sat)

V_BE

V_EB

-5 V

I_C= 0

-8

Forward current

transfer ratio

Collector-emitter

saturation voltage

Base-emitter

voltage

V_CE

-4 V

_C= -3 A

I_C= -8 A

_C= -3 A

1000

200

20000

(see Notes 5 and 6)

I_B

-6 mA

-80 mA

-2

I_C= -8 A

-2.5

V_CE

I_E

-4 V

-8 A

I_C= -8 A

-2.8

-3.5

Parallel diode

forward voltage

V_EC

I_B= 0

NOTES: 5. These parameters must be measured using pulse techniques, t_p= 300 µs, duty cycle £ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics

PARAMETER

Junction to case thermal resistance

Junction to free air thermal resistance

Thermal capacitance of case

MIN

TYP

MAX

UNIT

R_qJC

R_qJA

C_qC

1.56

62.5

°C/W

J/°C

0.9

resistive-load-switching characteristics at 25°C case temperature

†

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

t_d

t_r

Delay time

Rise time

Storage time

Fall time

µs

I_C= -8 A

_B(on)= -80 mA

I_B(off)= 80 mA

300

900

1.3

t_s

t_f

V_BE(off)= 5 V

R_L= 5 W

t_p= 20 µs, dc £ 2%

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

P R O D U C T

I N F O R M A T I O N

TIP105, TIP106, TIP107

PNP SILICON POWER DARLINGTONS

AUGUST 1978 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

COLLECTOR-EMITTER SATURATION VOLTAGE

COLLECTOR CURRENT

TCS135AB

TCS135AA

50000

10000

-2·0

t_p= 300 µs, duty cycle < 2%

I_B= I_C/ 100

T_C= -40°C

T_C= 25°C

T_C= 100°C

-1·5

-1·0

1000

T_C= -40°C

T_C= 25°C

V_CE

-4 V

t_p= 300 µs, duty cycle < 2%

T_C= 100°C

100

-0·5

-1·0

-10

-1·0

I_C- Collector Current - A

-10

I_C- Collector Current - A

Figure 1.

Figure 2.

BASE-EMITTER SATURATION VOLTAGE

COLLECTOR CURRENT

TCS135AC

-3·0

-2·5

-2·0

-1·5

-1·0

-0·5

T_C= -40°C

T_C= 25°C

T_C= 100°C

I_B= I_C/ 100

t_p= 300 µs, duty cycle < 2%

-0·5

-1·0

I_C- Collector Current - A

-10

Figure 3.

P R O D U C T

I N F O R M A T I O N

TIP105, TIP106, TIP107

PNP SILICON POWER DARLINGTONS

AUGUST 1978 - REVISED MARCH 1997

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

SAS135AA

-100

-10

t_p= 100 µs,

d = 0.1 = 10%

t_p= 1 ms,

d = 0.1 = 10%

t_p= 5 ms,

d = 0.1 = 10%

DC Operation

-1·0

-0·1

TIP105

TIP106

TIP107

-1·0

-10

-100

-1000

V_CE- Collector-Emitter Voltage - V

Figure 4.

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

CASE TEMPERATURE

TIS130AA

100

125

150

T_C- Case Temperature - °C

Figure 5.

P R O D U C T

I N F O R M A T I O N

TIP105, TIP106, TIP107

PNP SILICON POWER DARLINGTONS

AUGUST 1978 - REVISED MARCH 1997

MECHANICAL DATA

TO-220

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

TO220

4,70

4,20

10,4

10,0

1,32

1,23

3,96

3,71

2,95

2,54

see Note B

6,6

6,0

15,90

14,55

see Note C

6,1

3,5

14,1

12,7

1,70

1,07

0,97

0,61

2,74

2,34

0,64

0,41

2,90

2,40

5,28

4,88

VERSION 1

VERSION 2

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTES: A. The centre pin is in electrical contact with the mounting tab.

B. Mounting tab corner profile according to package version.

C. Typical fixing hole centre stand off height according to package version.

Version 1, 18.0 mm. Version 2, 17.6 mm.

MDXXBE

P R O D U C T

I N F O R M A T I O N

TIP105, TIP106, TIP107

PNP SILICON POWER DARLINGTONS

AUGUST 1978 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any

semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the

information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in

accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI

deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily

performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement

of patents or services described herein. Nor is any license, either express or implied, granted under any patent

right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,

machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE

SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

P R O D U C T

I N F O R M A T I O N

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