F1116 [POLYFET]
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR; PATENTED金金属化的硅栅增强型RF功率VDMOS晶体管
| 型号： | F1116 |
| 厂家： | 
POLYFET RF DEVICES |
| 描述： | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
polyfet rf devices
F1116
General Description
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
40Watts Push - Pull
Package Style AQ
TM
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
and high F enhance broadband
t
performance
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
Device
Dissipation
Temperature
o
o
o
o
100 Watts
1.5
4 A
70 V
70V
C/W
200 C
-65 C to 150 C
30V
RF CHARACTERISTICS (
40WATTS OUTPUT )
SYMBOL
Gps
PARAMETER
MIN
11
TYP
MAX
UNITS
dB
TEST CONDITIONS
Common Source Pow er Gain
Drain Efficiency
Idq = 0.4 A, Vds =28.0V, F = 400 MHz
Idq = 0.4 A, Vds =28.0V, F = 400 MHz
55
%
h
VSWR
Load Mismatch Tolerance
20:1
Relative Idq = 0.4 A, Vds =28.0V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
Bvdss
Idss
PARAMETER
MIN
65
TYP
MAX
UNITS
V
TEST CONDITIONS
Ids = 0.05A,
Drain Breakdow n Voltage
Zero Bias Drain Current
Vgs = 0V
1
1
7
mA
uA
Vds = 28.0V, Vgs = 0V
Vds = 0 V, Vgs = 30V
Igss
Gate Leakage Current
Vgs
Gate Bias for Drain Current
Forw ard Transconductance
Saturation Resistance
1
Ids = 0.1 A, Vgs = Vds
Vds = 10V, Vgs = 5V
V
Mho
Ohm
Amp
pF
gM
1
1
Rdson
Idsat
Ciss
Vgs = 20V, Ids = 4A
Saturation Current
6
Vgs = 20V, Vds = 10V
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
40
5
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Coss
pF
30
pF
REVISION 8/1/97
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com
F1116
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
F1116 POUT VS PIN F=400
MHZ; IDQ=0.4A; VDS=28.0V
F1J 1 DIE CAPACITANCE
1000
60
50
40
30
20
10
0
15.50
14.50
13.50
12.50
11.50
10.50
9.50
100
10
1
Ciss
Coss
Crss
Efficiency = 50%
0
1
2
3
4
5
6
7
0
5
10
15
20
25
30
PIN IN WATT S
VDS IN VOLTS
POUT
GAIN
IV CURVE
ID AND GM VS VGS
F1J 1 DIE IV CURVE
F1J 1 DIE GM & ID vs VGS
9
8
7
6
5
4
3
2
1
0
10
Id
1
Gm
0.1
0.01
0
2
4
6
8
10
12
14
16
18
20
Vds in Volts
0
2
4
6
8
10
12
14
16
18
20
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
Vgs inVolts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches
REVISION
POLYFET RF DEVICES
8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com
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