F1174 [POLYFET]
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR; PATENTED金金属化的硅栅增强型RF功率VDMOS晶体管
| 型号： | F1174 |
| 厂家： | 
POLYFET RF DEVICES |
| 描述： | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 文件： | 总2页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
F1174
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
130Watts Gemini
Package Style AR
Laser Driver and others.
TM
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Junction to
Maximum
Junction
Temperature
Storage
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
Device
Dissipation
Case Thermal
Resistance
Temperature
o
o
o
o
380 Watts
0.45
16 A
70 V
70V
C/W
200 C
-65 C to 150 C
30V
RF CHARACTERISTICS ( 130 WATTS OUTPUT )
SYMBOL
Gps
PARAMETER
MIN
10
TYP
MAX
UNITS
dB
TEST CONDITIONS
Common Source Power Gai
Drain Efficienc
Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz
Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz
55
%
VSWR
Load Mismatch Toleranc
20:1
Relative Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
Bvdss
Idss
PARAMETER
MIN
65
TYP
MAX
UNITS
V
TEST CONDITIONS
Ids = 0.2 A,
Vds = 28.0V, Vgs = 0V
Drain Breakdown Voltag
Zero Bias Drain Curren
Vgs = 0V
4
1
7
mA
uA
Igss
Gate Leakage Curren
Vds = 0 V,
Vgs = 30V
Vgs = Vds
Vgs
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
1
Ids = 0.4 A,
V
Mho
Ohm
Amp
pF
gM
4
0.35
24
Vds = 10V, Vgs = 5V
Rdson
Idsat
Ciss
Vgs = 20V, Ids = 16A
Saturation Curren
Vgs = 20V, Vds = 10V
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
160
20
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Coss
pF
120
pF
REVISION 1/12/98
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
F1174
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
F1174 POUT VS PIN F=400
MHZ; IDQ=1.6A; VDS=28.0V
F1J 4 DICE CAPACITANCE
1000
180
160
140
120
100
80
12.50
12.00
11.50
11.00
10.50
10.00
9.50
Ciss
100
10
1
Coss
Crss
60
Efficiency = 55%
40
9.00
20
8.50
0
8.00
0
5
10
15
20
25
30
0
5
10
15
20
25
VDS IN VOLTS
PIN IN WATTS
POUT
GAIN
IV CURVE
ID AND GM VS VGS
F1J4DICE IV
F1J 4 DICE ID & GM Vs VG
35
100.00
10.00
1.00
30
25
20
15
10
5
Id
gM
0.10
0
0
2
4
6
8
10
12
14
vg=10v
16
18
vg=12v
20
0
2
4
6
8
10
12
14
16
18
VDS INVOLTS
Vgs in Volts
vg=2v
Vg=4v
Vg=6v
vg=8v
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION 1/12/98
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
相关型号：
©2020 ICPDF网 联系我们和版权申明