L8801PR [POLYFET]
暂无描述;
| 型号： | L8801PR |
| 厂家： | 
POLYFET RF DEVICES |
| 描述： | 暂无描述 晶体 晶体管 栅 |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
polyfet rf devices
L8801P
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
10.0 Watts Single Ended
Package Style S08 P
TM
"Polyfet" process features
low feedback and output capacitances
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
resulting in high F transistors with high
t
input impedance and high efficiency.
o
25 C )
ABSOLUTE MAXIMUM RATINGS ( T =
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
Storage
Temperature
o
o
o
o
150
3.0
A
30 Watts
5.00 C/W
C
-65 C to 150 C
70 V
70 V
20 V
RF CHARACTERISTICS (
10.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN
10
TYP
MAX
UNITS
TEST CONDITIONS
Idq = 0.20 A, Vds = 28.0 V, F = 500
Gps
Common Source Power Gain
MHz
dB
%
h
Idq =
0.20
Drain Efficiency
40
A, Vds = 28.0 V, F = 500 MHz
Idq = 0.20
A, Vds = 28.0 V, F = 500
MHz
VSWR
Load Mismatch Tolerance
20:1
Relative
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
65
TYP
MAX
UNITS
V
TEST CONDITIONS
Drain Breakdown Voltage
Ids = 0.10 mA, Vgs = 0V
Vds =
Bvdss
Idss
1.0
Zero Bias Drain Current
Gate Leakage Current
mA
28.0 V, Vgs = 0V
Igss
Vgs
1
7
uA
V
Vds = 0V Vgs = 30V
Gate Bias for Drain Current
1
Ids = 0.10 A, Vgs = Vds
0.8
gM
Forward Transconductance
Saturation Resistance
Mho
Vds = 10V, Vgs = 5V
Rdson
Ohm
Vgs = 20V, Ids = 2.50 A
0.90
5.50
30.0
1.0
Idsat
Ciss
Crss
Coss
Saturation Current
Amp
pF
Vgs = 20V, Vds = 10V
28.0 Vgs = 0V, F = 1 MHz
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
Vds =
Vds =
Vds =
28.0 Vgs = 0V, F = 1 MHz
28.0 Vgs = 0V, F = 1 MHz
pF
15.0
pF
REVISION 12/13/2001
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
L8801P
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
L2 B 1 DIE CAP ACITANCE
L 8 8 0 1 P P i n v s P o u t F r e q = 1 0 0 0 M H z ,
V d s = 2 8 V d c , I d q = . 2 A
100
1 8
1 5
1 2
9
1 5
Ciss
1 4
1 3
1 2
1 1
1 0
9
Pout
1 0
Coss
1
Crss
6
Gain
3
Efficiency @10 watts = 40%
0.1
0
5
1 0
1 5
2 0
2 5
3 0
0
0
0 . 5
1
1 . 5
2
VDS IN VOLTS
P i n i n W a t t s
IV CURVE
ID & GM VS VGS
L2 B 1 DIE ID, GM vs VG
L2A 1 DICE IV
1 0 0
6
5
4
3
2
1
0
0
ID
1
GM
0
2
4
6
8
10
12
14
vg=10v
16
18
20
0.1
VDSINVOLTS
0
2
4
6
8
1 0
1 2
1 4
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=12v
Vg s in Vo lt s
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
12/13/2001
REVISION
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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