LP601 [POLYFET]
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 7.0 Watts Single Ended Package Style AP; 硅栅增强型RF功率LDMOS晶体管7.0瓦的单端封装形式AP
| 型号： | LP601 |
| 厂家： | 
POLYFET RF DEVICES |
| 描述： | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 7.0 Watts Single Ended Package Style AP |
| 文件： | 总2页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
polyfet rf devices
LP601
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
7.0Watts Single Ended
Package Style AP
TM
"Polyfet" process features
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
low feedback and output capacitances,
resulting in high F transistors with high
input impedance and high efficiency.
t
o
25 C )
ABSOLUTE MAXIMUM RATINGS ( T =
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
Storage
Temperature
o
o
o
o
200
4.0
A
50 Watts
3.60 C/W
C
-65 C to 150 C
70 V
70 V
20 V
RF CHARACTERISTICS (
7.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN
10
TYP
MAX
UNITS TEST CONDITIONS
Gps
η
Common Source Power Gain
Idq = 0.40 A, Vds =
V, F =
V, F =
MHz
dB
%
28.0
28.0
28.0
1,500
Idq =
Drain Efficiency
0.40
35
A, Vds =
A, Vds =
MHz
MHz
1,500
Idq = 0.40
VSWR
Load Mismatch Tolerance
10;1
Relative
V, F =
1,500
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
65
TYP
MAX
UNITS TEST CONDITIONS
V
mA
uA
V
Drain Breakdown Voltage
Ids = 0.10 mA, Vgs = 0V
Vds =
Bvdss
Idss
1.0
Zero Bias Drain Current
Gate Leakage Current
28.0 V, Vgs = 0V
Igss
Vgs
1
5
Vds = 0V Vgs = 30V
Gate Bias for Drain Current
2
Ids = 0.10 A, Vgs = Vds
0.5
gM
Forward Transconductance
Saturation Resistance
Mho
Vds = 10V, Vgs = 5V
Rdson
Ohm
Vgs = 20V, Ids = 2.50 A
0.90
4.00
16.0
0.8
Idsat
Ciss
Crss
Coss
Saturation Current
Amp
pF
Vgs = 20V, Vds = 10V
28.0 Vgs = 0V, F = 1 MHz
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
Vds =
Vds =
Vds =
28.0 Vgs = 0V, F = 1 MHz
pF
28.0 Vgs = 0V, F = 1 MHz
13.0
pF
REVISION 10/01/2007
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com
LP601
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
LP601 Pout/G ain vs Pin Freq=1.5G H z,
V ds=28V dc, Idq=.4A
L6B 1 DICE CAPACITANCE
100
10
8
13
Coss
13
12
12
11
11
10
10
9
10
1
Pout
Ciss
6
Gain
4
Crss
2
Efficiency @10 watts = 35%
0.1
0
0
4
8
12
16
20
24
28
0
0.2
0.4
0.6
0.8
1
VDS IN VOLTS
P in in W a tts
IV CURVE
ID & GM VS VGS
L6B 1 DIE ID & GM Vs VG
L6B 1 DIE IV
10.00
1.00
0.10
0.01
4
3.5
Id
3
2.5
2
gM
1.5
1
0.5
0
0
2
4
Vg=4v
6
8
10
12
14
16
0
18
20
vg=12v
0
2
4
6
8
10
12
14
16
18
VDS INVOLTS
Vgs in Volts
vg=2v
Vg=6v
vg=8v
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
REVISION 10/01/2007
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com
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