S8202 [POLYFET]
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR; 硅栅增强型RF功率VDMOS晶体管
| 型号： | S8202 |
| 厂家： | 
POLYFET RF DEVICES |
| 描述： | SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 文件： | 总2页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
polyfet rf devices
S8202
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
8.0 Watts Single Ended
Package Style SO8
TM
"Polyfet" process features
low feedback and output capacitances
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
resulting in high F transistors with high
t
input impedance and high efficiency.
o
25 C )
ABSOLUTE MAXIMUM RATINGS ( T =
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
Storage
Temperature
o
C/W
o
o
o
1.8
30 Watts
200 C
-65 C to 150 C
A
70V
70V
20 V
7.00
RF CHARACTERISTICS (
8.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN
10
TYP
MAX
UNITS
TEST CONDITIONS
Idq = 0.40 A, Vds = 28.0 V, F = 1,000
Gps
Common Source Power Gain
Drain Efficiency
MHz
dB
%
h
Idq =
0.40
45
A, Vds = 28.0 V, F = 1,000 MHz
Idq = 0.40
A, Vds = 28.0 V, F =1,000
MHz
VSWR
Load Mismatch Tolerance
20:1
Relative
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
65
TYP
MAX
UNITS
V
TEST CONDITIONS
Drain Breakdown Voltage
Ids = 20.00 mA, Vgs = 0V
Vds =
Bvdss
Idss
0.4
Zero Bias Drain Current
Gate Leakage Current
mA
28.0 V, Vgs = 0V
Igss
Vgs
1
7
uA
V
Vds = 0V Vgs = 30V
Gate Bias for Drain Current
1
Ids = 0.04 A, Vgs = Vds
0.6
gM
Forward Transconductance
Saturation Resistance
Mho
Vds = 10V, Vgs = 5V
Rdson
Ohm
Vgs = 20V, Ids = 1.00 A
2.00
2.80
20.0
1.2
Idsat
Ciss
Crss
Coss
Saturation Current
Amp
pF
Vgs = 20V, Vds = 10V
28.0 Vgs = 0V, F = 1 MHz
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
Vds =
Vds =
Vds =
28.0 Vgs = 0V, F = 1 MHz
28.0 Vgs = 0V, F = 1 MHz
pF
12.0
pF
REVISION 03/28/2001
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
S8202
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
S 8 2 0 2 P OUT VS P IN Fr e q = 1 0 0 0 MHz , VDS = 2 8 V, Id q = . 4 A
S2A 2 DICE CAPACITANCE
100
14
12
10
8
13.00
Ciss
12.00
11.00
10.00
9.00
Pout
0
Coss
1dB compression = 8 watts
6
8.00
Efficiency = 45%
4
Crss
7.00
Gain
2
6.00
0
5.00
0.1
0
5
1 0
1 5
2 0
2 5
3 0
0
0.5
1
1.5
2
2.5
3
3.5
4
VDS IN VOLTS
P IN IN WAT T S
IV CURVE
ID & GM VS VGS
S2A 2 DIE ID & GM Vs VG
S2A 2 DIE IV
10.00
1.00
0.10
3
2.5
2
Id
1.5
1
gM
0.5
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
16
18
vg=12v
20
Vgs in Volts
vg=2v
Vg=4v
Vg=6v
vg=8v
0
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
REVISION 03/28/2001
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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