SC721 [POLYFET]
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR; 硅栅增强型RF功率VDMOS晶体管
| 型号： | SC721 |
| 厂家： | 
POLYFET RF DEVICES |
| 描述： | SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
polyfet rf devices
SC721
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
15.0 Watts Single Ended
Package Style AC
TM
"Polyfet" process features
low feedback and output capacitances
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
resulting in high F transistors with high
t
input impedance and high efficiency.
o
25 C )
ABSOLUTE MAXIMUM RATINGS ( T =
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
Storage
Temperature
o
C/W
o
o
o
6.0
60 Watts
200 C
-65 C to 150 C
A
50V
50V
20 V
2.80
RF CHARACTERISTICS (
15.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN
8
TYP
MAX
UNITS
TEST CONDITIONS
Idq = 0.20 A, Vds = 12.5 V, F = 400
Gps
Common Source Power Gain
Drain Efficiency
MHz
dB
%
h
Idq =
0.20
60
A, Vds = 12.5 V, F = 400 MHz
Idq = 0.20
A, Vds = 12.5 V, F = 400
MHz
VSWR
Load Mismatch Tolerance
20:1
Relative
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
40
TYP
MAX
UNITS
V
TEST CONDITIONS
Drain Breakdown Voltage
Ids = 20.00 mA, Vgs = 0V
Vds =
Bvdss
Idss
1.0
Zero Bias Drain Current
Gate Leakage Current
mA
12.5 V, Vgs = 0V
Igss
Vgs
1
7
uA
V
Vds = 0V Vgs = 30V
Gate Bias for Drain Current
1
Ids = 0.10 A, Vgs = Vds
1.3
gM
Forward Transconductance
Saturation Resistance
Mho
Vds = 10V, Vgs = 5V
Rdson
Ohm
Vgs = 20V, Ids = 3.50 A
0.60
9.50
45.0
3.5
Idsat
Ciss
Crss
Coss
Saturation Current
Amp
pF
Vgs = 20V, Vds = 10V
12.5 Vgs = 0V, F = 1 MHz
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
Vds =
Vds =
Vds =
12.5 Vgs = 0V, F = 1 MHz
12.5 Vgs = 0V, F = 1 MHz
pF
55.0
pF
REVISION 03/28/2001
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
SC721
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
S C7 2 1 P in vs P o u t Fr e q = 4 0 0 MHz, VDS = 1 2 . 5 V, Id q = . 2 A
S1C 1 DIE CAPACITANCE
1000
20
15
10
5
10.00
Pout
Coss
100
1 0
1
Ciss
8.00
Crss
Gain
Efficiency = 60%
0
6.00
0
5
1 0
1 5
2 0
2 5
3 0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VDS IN VOLTS
P in in Watts
IV CURVE
ID & GM VS VGS
S1C 1 DIE ID & GM Vs VG
S1C 1 DIE IV
10.00
1.00
0.10
0.01
10
9
8
7
6
5
4
3
2
1
0
Id
gM
0
2
4
6
8
10
12
14
16
18
vg=12v
20
0
2
4
6
8
10
12
14
16
18
Vgs in Volts
vg=2v
Vg=4v
Vg=6v
vg=8v
0
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
REVISION 03/28/2001
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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