AFF450S45 [POSEICO]
FAST RECOVERY DIODE;
| 型号： | AFF450S45 |
| 厂家： | 
POWER SEMICONDUCTORS |
| 描述： | FAST RECOVERY DIODE 快速恢复二极管 |
| 文件： | 总3页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FAST RECOVERY DIODE
INSULATED MODULE
*Full ermetic packaging
*Industrial compatible packaging
*Insulation using Aln substrate
*6KVrms insulation voltage available on request
*Contact screws avaliable on request
AFF450
Repetitive voltage up to
4500 V
448 A
10 kA
Mean on-state current
Surge current
FINAL SPECIFICATION
apr 17 - ISSUE : 2
Tj
[°C]
Symbol
Characteristic
Conditions
Value
Unit
BLOCKING
V RRM
V RSM
I RRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
150
150
150
4500
4600
50
V
V
mA
CONDUCTING
I F (AV)
Mean on-state current
180° sin, 50Hz, Tc=100°C
448,5
A
I F (AV)
I FSM
I² t
Mean on-state current
Surge on-state current
I² t
180° sin. 50Hz, Tc=55°C
sine wave, 10 ms
703,3
A
kA
A²s
V
150
10,0
without reverse voltage
On-state current = 1500 A
500 x1E3
V F
On-state voltage
150 2,525
150 1,40
150 0,750
V F(TO)
r F
Threshold voltage
V
On-state slope resistance
Reverse recovery charge
Peak reverse recovery current
Reverse recovery time
Peak forward recovery
mohm
µC
A
Q rr
I F = 1000 A
150
150
150
150
1600
I rr
di/dt=
VR =
150 A/µs
100 V
500
6,4
60
t rr
µs
di/dt=
400
V FR
A/µs
µs
MOUNTING
R th(j-c)
Thermal impedance
Junction to case, per element
Case to heatsink, per element
50
°C/kW
R th(c-h)
T j
Thermal impedance
20
-30 / 150
4500
°C/kW
°C
Operating junction temperature
RMS insulation voltage
Mounting tourque
V ins
T
50Hz, circuit to base,all terminal shorted
25
V
Case to heatsink
4 to 6
12 to 18
1500
Nm
Nm
g
Busbars to terminals
Mass
ORDERING INFORMATION : AFF450 S 45
(*) 6000V available on request.
Add HVI to the desired code in
VRRM/100
standard specification
phase of order, i.e. AFF230HVIS26
Thermal impedance FAST DIODE MODULE
FINAL SPECIFICATION apr 17 - ISSUE : 2
SWITCHING CHARACTERISTICS
FORWARD RECOVERY VOLTAGE
90
80
70
60
50
40
30
20
10
0
Tj =150°C
IF
VFR
VF
0
200
400
600
800 1000 1200
di/dt [A/µs]
REVERSE RECOVERY CHARGE
REVERSE RECOVERY CURRENT
Tj = 150 °C
Tj = 150 °C
900
800
700
600
500
400
300
200
100
0
2000
1600
1200
800
400
0
1000 A
1000 A
500 A
500 A
0
100
200
300
400
0
100
200
300
400
di/dt [A/µs]
di/dt [A/µs]
IF
d i/d t
ta = Irr / (di/dt)
tb = trr - ta
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2
)
Irr
Vr
AFF450 FAST RECOVERY DIODE
FINAL SPECIFICATION apr 17 - ISSUE : 2
SURGE CHARACTERISTIC
Tj = 150 °C
ON-STATE CHARACTERISTIC
Tj = 150 °C
12
10
8
1400
1200
1000
800
600
400
200
0
6
4
2
0
1
1,5
2
2,5
1
10
100
n° cycles
On-state Voltage [V]
TRANSIENT THERMAL IMPEDANCE
60,0
50,0
40,0
30,0
20,0
10,0
0,0
0,001
0,1
10
t[s]
All the characteristics given in this data sheet are guaranteed only with uniform clamping force,
cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm.
In the interest of product improvement POSEICO SPA reserves the right to change any data given
in this data sheet at any time without previous notice.
Distributed by
If not stated otherwise the maximum value of ratings (simbols over shaded background) and
characteristics is reported.
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